Removal of hydrogen from the base of carbon‐doped In0.49Ga0.51P/GaAs heterojunction bipolar transistors by ex situ annealing and the effects on device characteristics

1996 ◽  
Vol 68 (7) ◽  
pp. 982-984 ◽  
Author(s):  
Q. J. Hartmann ◽  
H. Hwangbo ◽  
A. Yung ◽  
D. A. Ahmari ◽  
M. T. Fresina ◽  
...  
Keyword(s):  
Heterojunction Bipolar Transistors ◽  
Bipolar Transistors ◽  
Ex Situ ◽  
Carbon Doped

The Role of Hydrogen in Current-Induced Degradation of GaAs/AlGaAs Heterojunction Bipolar Transistors

1994 ◽  
Vol 338 ◽  
Author(s):  
F. Ren ◽  
C. R. Abernathy ◽  
S. N. G. Chu ◽  
J. R. Lothian ◽  
S. J. Pearton
Keyword(s):  
Heterojunction Bipolar Transistors ◽  
Bipolar Transistors ◽  
Ex Situ ◽  
Base Layer ◽  
Carrier Injection ◽  
Collector Current ◽  
Carbon Doped ◽  
Dc Gain ◽  
Metalorganic Molecular Beam Epitaxy ◽  
Current Densities

ABSTRACTCarbon-doped base GaAs/AlGaAs HBTs display current-induced decreases in dc gain which are correlated with the amount of hydrogen incorporated in the base layer during growth by Metalorganic Molecular Beam Epitaxy (MOMBE). During device operation, minority carrier injection induced debonding of hydrogen from neutral C-H complexes leads to an increase in effective base doping level and therefore to a decrease in gain. Post-growth in-situ or ex-situ annealing eliminates this effect by breaking up the C-H complexes. Properly designed HBTs are stable even for very high collector current densities (105 A · cm−2)

Improved performance of carbon‐doped GaAs base heterojunction bipolar transistors through the use of InGaP

1992 ◽  
Vol 61 (9) ◽  
pp. 1092-1094 ◽  
Author(s):  
C. R. Abernathy ◽  
F. Ren ◽  
P. W. Wisk ◽  
S. J. Pearton ◽  
R. Esagui
Keyword(s):  
Heterojunction Bipolar Transistors ◽  
Bipolar Transistors ◽  
Carbon Doped ◽  
Improved Performance

DC, RF, and noise characteristics of carbon-doped base InP/InGaAs heterojunction bipolar transistors

1994 ◽  
Vol 41 (1) ◽  
pp. 19-25 ◽  
Author(s):  
B.W.-P. Hong ◽  
Jong-In Song ◽  
C.J. Palmstrom ◽  
B. Van der Gaag ◽  
Kyung-Bae Chough ◽  
...  
Keyword(s):  
Heterojunction Bipolar Transistors ◽  
Bipolar Transistors ◽  
Carbon Doped ◽  
Noise Characteristics

InGaP/GaAs Heterojunction Bipolar Transistors (HBTs) with a Ultra-High Carbon-Doped Base (p=1.5×1021cm-3)

1994 ◽  
Author(s):  
Jun-ichi SHIRAKASHI ◽  
Toshiaki AZUMA ◽  
Fumihiko FUKUCHI ◽  
Makoto KONAGAI ◽  
Kiyoshi TAKAHASHI
Keyword(s):  
Heterojunction Bipolar Transistors ◽  
Bipolar Transistors ◽  
High Carbon ◽  
Carbon Doped
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