Improved performance of carbon‐doped GaAs base heterojunction bipolar transistors through the use of InGaP

1992 ◽  
Vol 61 (9) ◽  
pp. 1092-1094 ◽  
Author(s):  
C. R. Abernathy ◽  
F. Ren ◽  
P. W. Wisk ◽  
S. J. Pearton ◽  
R. Esagui
Keyword(s):  
Heterojunction Bipolar Transistors ◽  
Bipolar Transistors ◽  
Carbon Doped ◽  
Improved Performance

DC, RF, and noise characteristics of carbon-doped base InP/InGaAs heterojunction bipolar transistors

1994 ◽  
Vol 41 (1) ◽  
pp. 19-25 ◽  
Author(s):  
B.W.-P. Hong ◽  
Jong-In Song ◽  
C.J. Palmstrom ◽  
B. Van der Gaag ◽  
Kyung-Bae Chough ◽  
...  
Keyword(s):  
Heterojunction Bipolar Transistors ◽  
Bipolar Transistors ◽  
Carbon Doped ◽  
Noise Characteristics

InGaP/GaAs Heterojunction Bipolar Transistors (HBTs) with a Ultra-High Carbon-Doped Base (p=1.5×1021cm-3)

1994 ◽  
Author(s):  
Jun-ichi SHIRAKASHI ◽  
Toshiaki AZUMA ◽  
Fumihiko FUKUCHI ◽  
Makoto KONAGAI ◽  
Kiyoshi TAKAHASHI
Keyword(s):  
Heterojunction Bipolar Transistors ◽  
Bipolar Transistors ◽  
High Carbon ◽  
Carbon Doped

High fmax carbon-doped base InP/InGaAs heterojunction bipolar transistors grown by MOCVD

1996 ◽  
Vol 32 (15) ◽  
pp. 1415 ◽  
Author(s):  
H. Ito ◽  
S. Yamahata ◽  
N. Shigekawa ◽  
K. Kurishima
Keyword(s):  
Heterojunction Bipolar Transistors ◽  
Bipolar Transistors ◽  
Carbon Doped
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