DC, RF, and noise characteristics of carbon-doped base InP/InGaAs heterojunction bipolar transistors

B.W.-P. Hong;  Jong-In Song; C.J. Palmstrom; B. Van der Gaag;  Kyung-Bae Chough; J.R. Hayes

doi:10.1109/16.259615

DC, RF, and noise characteristics of carbon-doped base InP/InGaAs heterojunction bipolar transistors

IEEE Transactions on Electron Devices ◽

10.1109/16.259615 ◽

1994 ◽

Vol 41 (1) ◽

pp. 19-25 ◽

Cited By ~ 17

Author(s):

B.W.-P. Hong ◽

Jong-In Song ◽

C.J. Palmstrom ◽

B. Van der Gaag ◽

Kyung-Bae Chough ◽

...

Keyword(s):

Heterojunction Bipolar Transistors ◽

Bipolar Transistors ◽

Carbon Doped ◽

Noise Characteristics

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Current gain deterioration in carbon-doped AlGaAs/GaAs heterojunction bipolar transistors during high-temperature bias stress tests

Materials Science and Engineering B ◽

10.1016/0921-5107(94)90059-0 ◽

1994 ◽

Vol 28 (1-3) ◽

pp. 257-260 ◽

Cited By ~ 10

Author(s):

T. Ishibashi ◽

H. Sugahara ◽

H. Ito ◽

T. Nittono ◽

K. Nagata ◽

...

Keyword(s):

High Temperature ◽

Heterojunction Bipolar Transistors ◽

Bipolar Transistors ◽

Current Gain ◽

Stress Tests ◽

Carbon Doped ◽

Temperature Bias ◽

Bias Stress

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Fully Strained Heavily Carbon-Doped GaAs Grown by Gas-Source Molecular Beam Epitaxy Using Carbontetrabromide and Its Application to InGaP/GaAs Heterojunction Bipolar Transistors

Japanese Journal of Applied Physics ◽

10.1143/jjap.36.1866 ◽

1997 ◽

Vol 36 (Part 1, No. 3B) ◽

pp. 1866-1868 ◽

Cited By ~ 11

Author(s):

Kiyoshi Ouchi ◽

Tomoyoshi Mishima ◽

Kazuhiro Mochizuki ◽

Tohru Oka ◽

Tomonori Tanoue

Keyword(s):

Molecular Beam Epitaxy ◽

Heterojunction Bipolar Transistors ◽

Molecular Beam ◽

Bipolar Transistors ◽

Carbon Doped ◽

Gas Source

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Growth and Characterization of High-Speed Carbon-Doped-Base InP/InGaAs Heterojunction Bipolar Transistors by Metalorganic Chemical Vapor Deposition

Japanese Journal of Applied Physics ◽

10.1143/jjap.35.3343 ◽

1996 ◽

Vol 35 (Part 1, No. 6A) ◽

pp. 3343-3349 ◽

Cited By ~ 17

Author(s):

Hiroshi Ito ◽

Shoji Yamahata ◽

Naoteru Shigekawa ◽

Kenji Kurishima ◽

Yutaka Matsuoka

Keyword(s):

Chemical Vapor Deposition ◽

Heterojunction Bipolar Transistors ◽

Vapor Deposition ◽

High Speed ◽

Metalorganic Chemical Vapor Deposition ◽

Chemical Vapor ◽

Bipolar Transistors ◽

Carbon Doped ◽

Metalorganic Chemical

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1/f noise characteristics of InP/InGaAs heterojunction bipolar transistors

LEOS 1992 Summer Topical Meeting Digest on Broadband Analog and Digital Optoelectronics, Optical Multiple Access Networks, Integrated Optoelectronics, and Smart Pixels ◽

10.1109/iciprm.1992.235676 ◽

2003 ◽

Cited By ~ 2

Author(s):

M.N. Tutt ◽

D. Pavlidis ◽

H.-F. Chau

Keyword(s):

Heterojunction Bipolar Transistors ◽

Bipolar Transistors ◽

Noise Characteristics

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Improved performance of carbon‐doped GaAs base heterojunction bipolar transistors through the use of InGaP

Applied Physics Letters ◽

10.1063/1.107678 ◽

1992 ◽

Vol 61 (9) ◽

pp. 1092-1094 ◽

Cited By ~ 54

Author(s):

C. R. Abernathy ◽

F. Ren ◽

P. W. Wisk ◽

S. J. Pearton ◽

R. Esagui

Keyword(s):

Heterojunction Bipolar Transistors ◽

Bipolar Transistors ◽

Carbon Doped ◽

Improved Performance

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Carbon-doped GaInP/GaAs heterojunction bipolar transistors grown by metalorganic chemical vapor deposition using nitrogen as the carrier gas

Applied Physics Letters ◽

10.1063/1.120305 ◽

1997 ◽

Vol 71 (22) ◽

pp. 3248-3250 ◽

Cited By ~ 14

Author(s):

C. C. Hsu ◽

Y. F. Yang ◽

H. J. Ou ◽

E. S. Yang ◽

H. B. Lo

Keyword(s):

Chemical Vapor Deposition ◽

Heterojunction Bipolar Transistors ◽

Vapor Deposition ◽

Metalorganic Chemical Vapor Deposition ◽

Chemical Vapor ◽

Bipolar Transistors ◽

Carrier Gas ◽

Carbon Doped ◽

Metalorganic Chemical

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Carbon-doped InGaP/GaAs/InGaP double heterojunction bipolar transistors with a very low 1/f noise corner frequency of 108 kHz grown by chemical beam epitaxy

Journal of Crystal Growth ◽

10.1016/0022-0248(94)90413-8 ◽

1994 ◽

Vol 136 (1-4) ◽

pp. 221-224 ◽

Cited By ~ 4

Author(s):

Y.K. Chen ◽

R. Kapre ◽

W.T. Tsang ◽

A. Tate ◽

D.A. Humphrey ◽

...

Keyword(s):

Heterojunction Bipolar Transistors ◽

Bipolar Transistors ◽

Corner Frequency ◽

Chemical Beam Epitaxy ◽

Carbon Doped ◽

Double Heterojunction

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InGaP/GaAs Heterojunction Bipolar Transistors (HBTs) with a Ultra-High Carbon-Doped Base (p=1.5×1021cm-3)

10.7567/ssdm.1994.pc-1-3 ◽

1994 ◽

Author(s):

Jun-ichi SHIRAKASHI ◽

Toshiaki AZUMA ◽

Fumihiko FUKUCHI ◽

Makoto KONAGAI ◽

Kiyoshi TAKAHASHI

Keyword(s):

Heterojunction Bipolar Transistors ◽

Bipolar Transistors ◽

High Carbon ◽

Carbon Doped

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DC and 1/f noise characteristics of InGaP/InGaAsN/GaAs double heterojunction bipolar transistors

Semiconductor Science and Technology ◽

10.1088/0268-1242/21/2/012 ◽

2006 ◽

Vol 21 (2) ◽

pp. 167-170 ◽

Cited By ~ 2

Author(s):

Y K Su ◽

S H Hsu ◽

C C Sio ◽

W C Chen ◽

S J Chang

Keyword(s):

Heterojunction Bipolar Transistors ◽

Bipolar Transistors ◽

Noise Characteristics ◽

Double Heterojunction

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Precipitate formation in carbon-doped base of InGaP/GaAs heterojunction bipolar transistors grown by low-pressure metal organic chemical vapor deposition

Applied Physics Letters ◽

10.1063/1.123990 ◽

1999 ◽

Vol 74 (20) ◽

pp. 2993-2995 ◽

Cited By ~ 9

Author(s):

Q. Yang ◽

D. Scott ◽

J. Miller ◽

P. Meyer ◽

H. C. Kuo ◽

...

Keyword(s):

Chemical Vapor Deposition ◽

Heterojunction Bipolar Transistors ◽

Vapor Deposition ◽

Chemical Vapor ◽

Bipolar Transistors ◽

Organic Chemical ◽

Precipitate Formation ◽

Carbon Doped ◽

Metal Organic ◽

Organic Chemical Vapor Deposition

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