Formation and observation of 50 nm polarized domains in PbZr1−xTixO3 thin film using scanning probe microscope

1996 ◽  
Vol 68 (17) ◽  
pp. 2358-2359 ◽  
Author(s):  
T. Hidaka ◽  
T. Maruyama ◽  
M. Saitoh ◽  
N. Mikoshiba ◽  
M. Shimizu ◽  
...  
Author(s):  
S. P. Sapers ◽  
R. Clark ◽  
P. Somerville

OCLI is a leading manufacturer of thin films for optical and thermal control applications. The determination of thin film and substrate topography can be a powerful way to obtain information for deposition process design and control, and about the final thin film device properties. At OCLI we use a scanning probe microscope (SPM) in the analytical lab to obtain qualitative and quantitative data about thin film and substrate surfaces for applications in production and research and development. This manufacturing environment requires a rapid response, and a large degree of flexibility, which poses special challenges for this emerging technology. The types of information the SPM provides can be broken into three categories:(1)Imaging of surface topography for visualization purposes, especially for samples that are not SEM compatible due to size or material constraints;(2)Examination of sample surface features to make physical measurements such as surface roughness, lateral feature spacing, grain size, and surface area;(3)Determination of physical properties such as surface compliance, i.e. “hardness”, surface frictional forces, surface electrical properties.


AIP Advances ◽  
2013 ◽  
Vol 3 (2) ◽  
pp. 022124 ◽  
Author(s):  
Vijaykumar Toutam ◽  
Himanshu Pandey ◽  
Sandeep Singh ◽  
R. C. Budhani

2016 ◽  
Vol 723 ◽  
pp. 439-443
Author(s):  
Jin Ming Luo

NiO/BiFeO3 thin film has been deposited on Pt/Ti/SiO2/Si substrate by sol-gel method. The structure of thin film is analyzed by X-ray diffraction, and the result of X-ray diffraction shows that a perovskite crystal structure can be well-grown on Pt/Ti/SiO2/Si substrate. In addition, the surface morphology is characterized by a scanning probe microscope, and the image of scanning probe microscope indicates a good crystalline quality of NiO/BFO thin film. Moreover, the current-voltage properties are also measured by a semiconductor characterization system, and the stable and reproducible nonvolatile resistive switching characteristic for the memory application have been clearly observed in Pt/NiO/BiFeO3/Pt structure, which could be attributed to the formation and rupture of filament localized in NiO thin layer.


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