Partial screening of internal electric fields in strained piezoelectric quantum well lasers: Implications for optoelectronic integration

1996 ◽  
Vol 68 (12) ◽  
pp. 1595-1597 ◽  
Author(s):  
A. S. Pabla ◽  
J. Woodhead ◽  
E. A. Khoo ◽  
R. Grey ◽  
J. P. R. David ◽  
...  
Keyword(s):  
Quantum Well ◽  
Electric Fields ◽  
Quantum Well Lasers ◽  
Optoelectronic Integration

Intrasubband 1.55 μm Electrooptical Modulation in SiGe Asymmetric Quantum Well Structures

1993 ◽  
Vol 298 ◽  
Author(s):  
Lionel R. Friedman ◽  
Richard A. Soref
Keyword(s):  
Quantum Well ◽  
Electric Fields ◽  
Field Effect ◽  
Narrow Linewidth ◽  
Microwave Response ◽  
Optical Extinction ◽  
Quantum Well Structures ◽  
Electrooptic Modulator ◽  
Asymmetric Quantum ◽  
Optoelectronic Integration

AbstractA new, fast, intrasubband 1.55 μm electrooptic modulator in the SiGe/Si/CaF2-on-Si steppedquantum- well system is proposed and analyzed. At electric fields of ±8 V/μm, resonant 1-3 conduction intrasubband absorption is predicted to give 18 dB of optical extinction for narrow-linewidth transitions. We expect this field effect modulator to have microwave response, plus compatibility with Si-based optoelectronic integration.

High performance InGaAsP/InP semiconductor quantum well lasers realized by gas source molecular beam epitaxy

1992 ◽  
Vol 2 (9) ◽  
pp. 1727-1738 ◽  
Author(s):  
A. Accard ◽  
F. Brillouet ◽  
E. Duda ◽  
B. Fernier ◽  
G. Gelly ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Quantum Well ◽  
High Performance ◽  
Molecular Beam ◽  
Quantum Well Lasers ◽  
Gas Source ◽  
Semiconductor Quantum Well

Optical Properties of Zn1-xCdxSe/ZnSe Quantum Well Lasers Fabricated by Molecular Beam Epitaxy

1996 ◽  
Vol 203 ◽  
pp. 261-266
Author(s):  
L. Calcagnile ◽  
G. Colì ◽  
R. Cingolani ◽  
L. Vanzetti ◽  
L. Sorba ◽  
...  
Keyword(s):  
Optical Properties ◽  
Molecular Beam Epitaxy ◽  
Quantum Well ◽  
Molecular Beam ◽  
Quantum Well Lasers
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