Unity ratio of cross‐ to self‐phase modulation in bulk AlGaAs and AlGaAs/GaAs multiple quantum well waveguides at half the band gap

1995 ◽  
Vol 67 (6) ◽  
pp. 760-762 ◽  
Author(s):  
A. Villeneuve ◽  
J. U. Kang ◽  
J. S. Aitchison ◽  
G. I. Stegeman
Keyword(s):  
Quantum Well ◽  
Band Gap ◽  
Phase Modulation ◽  
Multiple Quantum Well ◽  
Multiple Quantum ◽  
Self Phase Modulation

Self-phase modulation coefficient of multiple-quantum-well optical amplifiers

1996 ◽  
Vol 8 (7) ◽  
pp. 876-878 ◽  
Author(s):  
L.F. Tiemeijer ◽  
P.J.A. Thijs ◽  
T. van Dongen ◽  
J.J.M. Binsma ◽  
E.J. Jansen
Keyword(s):  
Quantum Well ◽  
Phase Modulation ◽  
Optical Amplifiers ◽  
Multiple Quantum Well ◽  
Multiple Quantum ◽  
Self Phase Modulation ◽  
Modulation Coefficient

Experimental study on the mechanism governing spectral shifts in low power 670 nm AlGaInP multiple quantum well (MQW) laser diodes over temperature range 5–45 °C

2016 ◽  
Vol 94 (7) ◽  
pp. 640-644 ◽  
Author(s):  
Santosh Chackrabarti ◽  
Dhrub Sharma ◽  
Shereena Joseph ◽  
Tho-alfiqar A. Zaker ◽  
A.K. Hafiz ◽  
...  
Keyword(s):  
Quantum Well ◽  
Low Power ◽  
Band Gap ◽  
Characteristic Temperature ◽  
Multiple Quantum Well ◽  
Laser Diodes ◽  
Threshold Current ◽  
Multiple Quantum ◽  
Spectral Shifts ◽  
Band Gap Narrowing

We report on the temperature-dependent spectral shifts in low power 670 nm AlGaInP multiple quantum well red laser diodes due to band gap narrowing at room temperatures (5–45 °C). The spectral shift mechanism is explored with a threshold current density of 11.41 kA/cm2 and a good characteristic temperature of 114 K. The photoluminescence peak intensity shifts towards higher wavelengths and the full width at half maximum increases with increase in temperature from 5 to 45 °C. We use a Hamiltonian system considering the effective mass approximation to formulate the carrier concentrations. The band gap narrowing value determined by a simple formula amounts to 59.15 meV and displays N1/3 dependence at higher densities. The carrier density dependence conveys that the redshift of the spectral emission is due to band gap narrowing.

Phase modulation characteristics of 1.5 μm strained-layer multiple quantum well laser amplifiers

1990 ◽  
Vol 26 (22) ◽  
pp. 1858 ◽  
Author(s):  
D. Reichenbach ◽  
C.E. Zah ◽  
N. Andreadakis ◽  
F.J. Favire ◽  
S.G. Menocal ◽  
...  
Keyword(s):  
Quantum Well ◽  
Phase Modulation ◽  
Multiple Quantum Well ◽  
Multiple Quantum ◽  
Strained Layer ◽  
Laser Amplifiers ◽  
Quantum Well Laser ◽  
Multiple Quantum Well Laser

Self-photo-induced phase modulation in GaAs/AlGaAs multiple quantum well waveguides

1989 ◽  
Vol 25 (24) ◽  
pp. 1668 ◽  
Author(s):  
C. Thirstrup ◽  
P. Li Kam Wa ◽  
M.A. Pate ◽  
J.S. Roberts ◽  
P.N. Robson
Keyword(s):  
Quantum Well ◽  
Phase Modulation ◽  
Multiple Quantum Well ◽  
Multiple Quantum

Quantum Well Solar Cells

2012 ◽  
pp. 33-47
Author(s):  
Magdalena Lidia Ciurea ◽  
Ana-Maria Lepadatu ◽  
Ionel Stavarache
Keyword(s):  
Solar Cells ◽  
Quantum Well ◽  
Band Gap ◽  
Multiple Quantum Well ◽  
Multiple Quantum ◽  
Cell Parameters ◽  
Balanced Structure ◽  
Design Solutions ◽  
Graded Band Gap

Several structures with different absorbers from 3-5 and 4 groups are described and discussed. Various technological and design solutions, such as multiple quantum well solar cells with graded band gap, with tandem configurations, with strain-balanced structure, and strain-balanced structure improved with nanoparticles deposited atop are analyzed. The cell parameters are discussed and related to the materials and technology.

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