Self-photo-induced phase modulation in GaAs/AlGaAs multiple quantum well waveguides

1989 ◽  
Vol 25 (24) ◽  
pp. 1668 ◽  
Author(s):  
C. Thirstrup ◽  
P. Li Kam Wa ◽  
M.A. Pate ◽  
J.S. Roberts ◽  
P.N. Robson
Keyword(s):  
Quantum Well ◽  
Phase Modulation ◽  
Multiple Quantum Well ◽  
Multiple Quantum

Self-phase modulation coefficient of multiple-quantum-well optical amplifiers

1996 ◽  
Vol 8 (7) ◽  
pp. 876-878 ◽  
Author(s):  
L.F. Tiemeijer ◽  
P.J.A. Thijs ◽  
T. van Dongen ◽  
J.J.M. Binsma ◽  
E.J. Jansen
Keyword(s):  
Quantum Well ◽  
Phase Modulation ◽  
Optical Amplifiers ◽  
Multiple Quantum Well ◽  
Multiple Quantum ◽  
Self Phase Modulation ◽  
Modulation Coefficient

Phase modulation characteristics of 1.5 μm strained-layer multiple quantum well laser amplifiers

1990 ◽  
Vol 26 (22) ◽  
pp. 1858 ◽  
Author(s):  
D. Reichenbach ◽  
C.E. Zah ◽  
N. Andreadakis ◽  
F.J. Favire ◽  
S.G. Menocal ◽  
...  
Keyword(s):  
Quantum Well ◽  
Phase Modulation ◽  
Multiple Quantum Well ◽  
Multiple Quantum ◽  
Strained Layer ◽  
Laser Amplifiers ◽  
Quantum Well Laser ◽  
Multiple Quantum Well Laser

RESONANT TUNNELING STUDIES OF VARIABLY SPACED MULTIPLE QUANTUM WELL STRUCTURES IN THE AlGaAs SYSTEM

1987 ◽  
Vol 48 (C5) ◽  
pp. C5-457-C5-461
Author(s):  
C. J. SUMMERS ◽  
K. F. BRENNAN ◽  
A. TORABI ◽  
H. M. HARRIS ◽  
J. COMAS
Keyword(s):  
Quantum Well ◽  
Resonant Tunneling ◽  
Multiple Quantum Well ◽  
Multiple Quantum ◽  
Quantum Well Structures

Low-Temperature Operation of Green, Blue and UV InGaN/GaN Multiple-Quantum-Well Light-Emitting Diodes

2003 ◽  
Vol 764 ◽  
Author(s):  
X. A. Cao ◽  
S. F. LeBoeuf ◽  
J. L. Garrett ◽  
A. Ebong ◽  
L. B. Rowland ◽  
...  
Keyword(s):  
Quantum Well ◽  
Light Emitting Diodes ◽  
Multiple Quantum Well ◽  
Light Output ◽  
Localized States ◽  
Multiple Quantum ◽  
Nonradiative Recombination ◽  
Light Emitting ◽  
Temperature Range ◽  
Green Leds

Absract:Temperature-dependent electroluminescence (EL) of InGaN/GaN multiple-quantum-well light-emitting diodes (LEDs) with peak emission energies ranging from 2.3 eV (green) to 3.3 eV (UV) has been studied over a wide temperature range (5-300 K). As the temperature is decreased from 300 K to 150 K, the EL intensity increases in all devices due to reduced nonradiative recombination and improved carrier confinement. However, LED operation at lower temperatures (150-5 K) is a strong function of In ratio in the active layer. For the green LEDs, emission intensity increases monotonically in the whole temperature range, while for the blue and UV LEDs, a remarkable decrease of the light output was observed, accompanied by a large redshift of the peak energy. The discrepancy can be attributed to various amounts of localization states caused by In composition fluctuation in the QW active regions. Based on a rate equation analysis, we find that the densities of the localized states in the green LEDs are more than two orders of magnitude higher than that in the UV LED. The large number of localized states in the green LEDs are crucial to maintain high-efficiency carrier capture at low temperatures.

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