Ion bombardment-type high frequency metal ion source for compact ion beam deposition apparatus

2000 ◽  
Vol 71 (2) ◽  
pp. 1128-1130
Author(s):  
Mutsuo Yamashita
Keyword(s):  
High Frequency ◽  
Metal Ion ◽  
Ion Beam ◽  
Ion Bombardment ◽  
Ion Source ◽  
Ion Beam Deposition ◽  
Beam Deposition

Characteristics and surface analysis of ion beam deposition from binary boron platinum (Pt58B42) liquid‐metal ion source

1988 ◽  
Vol 63 (3) ◽  
pp. 878-886 ◽  
Author(s):  
R. H. Higuchi‐Rusli ◽  
J. C. Corelli ◽  
A. J. Steckl ◽  
H‐S. Jin
Keyword(s):  
Liquid Metal ◽  
Surface Analysis ◽  
Metal Ion ◽  
Ion Beam ◽  
Ion Source ◽  
Ion Beam Deposition ◽  
Beam Deposition

Field emission properties of nitrogen-doped diamond-like carbon films deposited by direct metal ion beam deposition

2001 ◽  
Vol 697 ◽  
Author(s):  
Kie Moon Song ◽  
Namwoong Paik ◽  
Steven Kim ◽  
Daeil Kim ◽  
Seongjin Kim ◽  
...  
Keyword(s):  
Field Emission ◽  
Photoelectron Spectroscopy ◽  
Metal Ion ◽  
Nitrogen Doping ◽  
Ion Beam ◽  
Diamond Like Carbon ◽  
Emission Data ◽  
Nitrogen Doped ◽  
Ion Beam Deposition ◽  
Beam Deposition

AbstractNitrogen-doped diamond-like carbon (DLC) films were deposited on a silicon substrate by direct metal ion beam deposition (DMIBD). Partial pressures of nitrogen gas were changed to get different compositions of nitrogen in the DLC films. The composition and surface morphology of the films were examined using X-ray photoelectron spectroscopy (XPS) and atomic force microscope (AFM). Effect of nitrogen doping on field emission property was studied. The field emission data indicated that the nitrogen doping lowered the turn-on field and increase the current density. It was believed that doping of nitrogen into the DLC film plays an important role in enhancement of the field emission. This enhancement of field emission could be explained by the improvement of electron transport through nitrogen-dope DLC layer.

Low‐energy (5

1995 ◽  
Vol 13 (6) ◽  
pp. 2836-2842 ◽  
Author(s):  
Y.‐W. Kim ◽  
I. Petrov ◽  
H. Ito ◽  
J. E. Greene
Keyword(s):  
Ion Beam ◽  
Ultrahigh Vacuum ◽  
Ion Source ◽  
Low Energy ◽  
High Brightness ◽  
Ion Beam Deposition ◽  
Beam Deposition

Composite Nanowires from Ion Beam Modification of Si Nanowires

1999 ◽  
Vol 581 ◽  
Author(s):  
X. T. Zhou ◽  
H. Y. Peng ◽  
N. G. Shang ◽  
N. Wang ◽  
I. Bello ◽  
...  
Keyword(s):  
Reaction Pathway ◽  
Ion Beam ◽  
Ion Source ◽  
Low Energy ◽  
Hydrogen Ions ◽  
Si Nanowires ◽  
Interacting Particles ◽  
Ion Beam Modification ◽  
Ion Beam Deposition ◽  
Beam Deposition

ABSTRACTComposite nanowires with typical diameters of 30-100nm, which consisted of Si, β-SiC, amorphous carbon were converted from Si nanowires by ion beam deposition. The Si nanorods were exposed to broad low energy ion beams. The low energy hydrocarbon, argon and hydrogen ions, generated in a Kaufman ion source, reacted with Si nanowires and formed the composite nanowires. It has been assumed that the reaction pathway to form the composite nanowires were driven by both thermal diffusion and kinetic energic of interacting particles.

scholarly journals Ion-Beam Deposition/Etching Using EMIM-N(CN)2 Ionic Liquid Ion Source

2015 ◽  
Vol 40 (2) ◽  
pp. 87-90 ◽  
Author(s):  
Mitsuaki Takeuchi ◽  
Yuki Hoshide ◽  
Takuya Hamaguchi ◽  
Hiromichi Ryuto ◽  
Gikan H. Takaoka
Keyword(s):  
Ionic Liquid ◽  
Ion Beam ◽  
Ion Source ◽  
Ion Beam Deposition ◽  
Beam Deposition
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