Heavy-ion sources: The Star, or the Cinderella, of the ion-implantation firmament? (invited)

2000 ◽  
Vol 71 (2) ◽  
pp. 603-611 ◽  
Author(s):  
Harry Freeman
2016 ◽  
Vol 87 (2) ◽  
pp. 02C107 ◽  
Author(s):  
A. Kitagawa ◽  
A. G. Drentje ◽  
T. Fujita ◽  
M. Muramatsu ◽  
K. Fukushima ◽  
...  

1983 ◽  
Vol 27 ◽  
Author(s):  
J.S. Williams ◽  
D.J. Chivers ◽  
R.G. Elliman ◽  
S.T. Johnson ◽  
E.M. Lawson ◽  
...  

ABSTRACTThis paper presents new data on the previously observed porous structures which can be developed in high dose, ion implanted Ge. In addition, we provide strong evidence to suggest that such porous structures can be formed in high dose, ion implanted Si and GaAs substrates under particular implant conditions. Comparison of the various systems using RBS analysis indicates that heavy ion doses as low as 1014 cm−2 can give rise to such structural modifications in GaAs, whereas doses of 1015 cm−2 are needed to observe an effect with Ge and doses usually exceeding 1016cm−2 are required for Si.


1990 ◽  
Vol 61 (1) ◽  
pp. 553-555 ◽  
Author(s):  
H. L. Rutkowski ◽  
R. M. Johnson ◽  
W. G. Greenway ◽  
M. A. Gross ◽  
D. W. Hewett ◽  
...  

1990 ◽  
Vol 125 (3) ◽  
pp. 258-263 ◽  
Author(s):  
G. Petö ◽  
L. Rosta ◽  
J. Kanski ◽  
A. Barna ◽  
A. Menelle ◽  
...  

1996 ◽  
Vol 67 (3) ◽  
pp. 962-964 ◽  
Author(s):  
A. Kitagawa ◽  
S. Yamada ◽  
M. Muramatsu ◽  
H. Ogawa ◽  
Y. Sato ◽  
...  
Keyword(s):  

2010 ◽  
Vol 43 (50) ◽  
pp. 505302 ◽  
Author(s):  
R Sreekumar ◽  
A Mandal ◽  
S Chakrabarti ◽  
S K Gupta

2004 ◽  
Vol 464-465 ◽  
pp. 264-267 ◽  
Author(s):  
O.A. Plaksin ◽  
Y. Takeda ◽  
N. Okubo ◽  
H. Amekura ◽  
K. Kono ◽  
...  

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