Thickness and effective electron mass measurements for thin silicon dioxide films using tunneling current oscillations

1995 ◽  
Vol 67 (7) ◽  
pp. 1031-1033 ◽  
Author(s):  
S. Zafar ◽  
K. A. Conrad ◽  
Q. Liu ◽  
E. A. Irene ◽  
G. Hames ◽  
...  
1994 ◽  
Vol 342 ◽  
Author(s):  
Sufi Zafar ◽  
J. C. Poler ◽  
E. A. Irene ◽  
X. Xu ◽  
G. Haines ◽  
...  

ABSTRACTTunneling currents through thin silicon dioxide films on p-type silicon are measured at electric fields greater than 5 MV/cm. At the onset of the Fowler-Nordheim tunneling, oscillations in the current are observed. These oscillations are used for characterizing oxide films grown by three different processes: rapid thermal chemical vapor deposition, rapid thermal oxidation and thermal oxidation. We have explored the correlation between the oscillatory tunneling currents and the breakdown fields, and find a low field dc component to correlate with the breakdown fields and obscure the oscillations.


1989 ◽  
Author(s):  
A. Kalnitsky ◽  
S. P. Tay ◽  
J. P. Ellul ◽  
J. W. Andrews ◽  
E. A. Irene ◽  
...  

2008 ◽  
Vol 47 (11) ◽  
pp. 8317-8320
Author(s):  
Takaaki Hirokane ◽  
Naoto Yoshii ◽  
Tatsuya Okazaki ◽  
Shinichi Urabe ◽  
Kazuo Nishimura ◽  
...  

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