Inductively coupled radio frequency plasma chemical vapor deposition using a ladder‐shaped antenna

1996 ◽  
Vol 67 (4) ◽  
pp. 1542-1545 ◽  
Author(s):  
Masayoshi Murata ◽  
Yosiaki Takeuchi ◽  
Eishiro Sasagawa ◽  
Kazutoshi Hamamoto
Keyword(s):  
Chemical Vapor Deposition ◽  
Radio Frequency ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Radio Frequency Plasma ◽  
Plasma Chemical ◽  
Plasma Chemical Vapor Deposition ◽  
Inductively Coupled ◽  
Frequency Plasma

Synthesis of carbon nanosheets by inductively coupled radio-frequency plasma enhanced chemical vapor deposition

Carbon ◽  
2004 ◽  
Vol 42 (14) ◽  
pp. 2867-2872 ◽  
Author(s):  
Jianjun Wang ◽  
Mingyao Zhu ◽  
Ron A. Outlaw ◽  
Xin Zhao ◽  
Dennis M. Manos ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Radio Frequency ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Radio Frequency Plasma ◽  
Carbon Nanosheets ◽  
Inductively Coupled ◽  
Frequency Plasma

Plasma Polymerized SiCOH Films from Octamethylcyclotetrasiloxane by Dual Radio Frequency Inductively Coupled Plasma Chemical Vapor Deposition System

2021 ◽  
Vol 21 (8) ◽  
pp. 4477-4483
Author(s):  
Hyuna Lim ◽  
Yoonsoo Park ◽  
Namwuk Baek ◽  
So-Yeon Jun ◽  
Sungwoo Lee ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Elastic Modulus ◽  
Radio Frequency ◽  
Mechanical Strength ◽  
Vapor Deposition ◽  
Inductively Coupled Plasma ◽  
Chemical Vapor ◽  
Plasma Chemical ◽  
Plasma Chemical Vapor Deposition ◽  
Inductively Coupled

We have fabricated porous plasma polymerized SiCOH (ppSiCOH) films with low-dielectric constants (low-k, less than 2.9), by applying dual radio frequency plasma in inductively coupled plasma chemical vapor deposition (ICP-CVD) system. We varied the power of the low radio frequency (LF) of 370 kHz from 0 to 65 W, while fixing the power of the radio frequency (RF) of 13.56 MHz. Although the ppSiCOH thin film without LF had the lowest k value, its mechanical strength is not high to stand the subsequent semiconductor processing. As the power of the LF was increased, the densities of ppSiCOH films became high, accordingly high in the hardness and elastic modulus, with quite satisfactory low-k value of 2.87. Especially, the ppSiCOH film, deposited at 35 W, exhibited the highest mechanical strength (hardness: 1.7 GPa, and elastic modulus: 9.7 GPa), which was explained by Fourier transform infrared spectroscopy. Since the low-k material is widely used as an inter-layer dielectric insulator, good mechanical properties are required to withstand chemical mechanical polishing damage. Therefore, we suggest that plasma polymerized process based on the dual frequency can be a good candidate for the deposition of low-k ppSiCOH films with enhanced mechanical strength.

The Development of Polyethylene Naphthalate Films by Low-pressure High-frequency Plasma Chemical Vapor Deposition System with Advance Oxidations Process

2015 ◽  
Vol 18 (1) ◽  
Author(s):  
Nuttee Thungsuk ◽  
Toshifumi Yuji ◽  
Narong Mungkung ◽  
Yoshimi Okamura ◽  
Atsushi Fujimaru ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
High Frequency ◽  
Chemical Vapor ◽  
Low Pressure ◽  
Polyethylene Naphthalate ◽  
Plasma Chemical ◽  
Plasma Chemical Vapor Deposition ◽  
High Frequency Plasma ◽  
Frequency Plasma

AbstractThe low-pressure high-frequency plasma chemical vapor deposition (CVD) system was developed with non-thermal plasma process to study the Polyethylene naphthalate (PEN) surface characteristics. Plasma surface treatment by oxygen can improve the adhesive properties. A mixture of Ar and O

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