A high‐current microwave ion source for ion implantation

1992 ◽  
Vol 63 (4) ◽  
pp. 2562-2564 ◽  
Author(s):  
S. R. Walther
Keyword(s):  
Ion Implantation ◽  
Ion Source ◽  
High Current ◽  
Microwave Ion Source

High-current microwave ion source for wide-energy-range O+ ion implantation

2000 ◽  
Vol 71 (2) ◽  
pp. 952-954 ◽  
Author(s):  
K. Tokiguchi ◽  
T. Seki ◽  
J. Ito ◽  
T. Sato ◽  
K. Mera
Keyword(s):  
Ion Implantation ◽  
Energy Range ◽  
Ion Source ◽  
Wide Energy Range ◽  
High Current ◽  
Microwave Ion Source ◽  
Wide Energy

Minipermanent magnet high-current microwave ion source

2006 ◽  
Vol 77 (3) ◽  
pp. 03A305 ◽  
Author(s):  
Zhizhong Song ◽  
Shixiang Peng ◽  
Jinxiang Yu ◽  
Jianchuan Ming ◽  
Zhongxi Yuan ◽  
...  
Keyword(s):  
Ion Source ◽  
High Current ◽  
Microwave Ion Source

The 100‐kV gas and metal ion source for high current ion implantation

1992 ◽  
Vol 63 (4) ◽  
pp. 2422-2424 ◽  
Author(s):  
S. P. Bugaev ◽  
A. G. Nikolaev ◽  
E. M. Oks ◽  
P. M. Schanin ◽  
G. Yu. Yushkov
Keyword(s):  
Ion Implantation ◽  
Metal Ion ◽  
Ion Source ◽  
High Current

scholarly journals Characteristics of a High Current Microwave Ion Source for Oxygen Ion Implanter.

Shinku ◽  
1999 ◽  
Vol 42 (7) ◽  
pp. 670-675 ◽  
Author(s):  
Takayoshi SEKI ◽  
Katsumi TOKIGUCHI
Keyword(s):  
Ion Source ◽  
High Current ◽  
Oxygen Ion ◽  
Microwave Ion Source

Pattern Evolution of NiSi2 on Si Surface upon High Current Pulsed Ni Ion Implantation

2000 ◽  
Vol 648 ◽  
Author(s):  
X.Q. Cheng ◽  
H.N. Zhu ◽  
B.X. Liu
Keyword(s):  
Ion Implantation ◽  
Ion Beam ◽  
Fractal Dimensions ◽  
Metal Vapor ◽  
Ion Source ◽  
Vacuum Arc ◽  
High Current ◽  
Si Substrate ◽  
Kinetics Of ◽  
Si Wafer

AbstractFractal pattern evolution of NiSi2 grains on a Si surface was induced by high current pulsed Ni ion implantation into Si wafer using metal vapor vacuum arc ion source. The fractal dimension of the patterns was found to correlate with the temperature rise of the Si substrate caused by the implanting Ni ion beam. With increasing of the substrate temperature, the fractal dimensions were determined to increase from less than 1.64, to beyond the percolation threshold of 1.88, and eventually up to 2.0, corresponding to a uniform layer with fine NiSi2 grains. The growth kinetics of the observed surface fractals was also discussed in terms of a special launching mechanism of the pulsed Ni ion beam into the Si substrate.

High‐current ion implanter using a microwave ion source

1983 ◽  
Vol 54 (6) ◽  
pp. 681-684 ◽  
Author(s):  
Noriyuki Sakudo ◽  
Katsumi Tokiguchi ◽  
Hidemi Koike ◽  
Ichiro Kanomata
Keyword(s):  
Ion Source ◽  
High Current ◽  
Microwave Ion Source
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