Spatial distribution of light‐induced defects in hydrogenated amorphous silicon

1995 ◽  
Vol 66 (6) ◽  
pp. 742-744 ◽  
Author(s):  
Jiang‐Huai Zhou ◽  
Minoru Kumeda ◽  
Tatsuo Shimizu
Keyword(s):  
Spatial Distribution ◽  
Amorphous Silicon ◽  
Hydrogenated Amorphous Silicon ◽  
Induced Defects ◽  
Hydrogenated Amorphous

Role of the hydrogen in the light-induced defects in undoped hydrogenated amorphous silicon

1991 ◽  
pp. 265-268
Author(s):  
H. Labidi ◽  
K. Zellama ◽  
P. Germain ◽  
M. Astier ◽  
D. Lortigues ◽  
...  
Keyword(s):  
Amorphous Silicon ◽  
Hydrogenated Amorphous Silicon ◽  
Induced Defects ◽  
Hydrogenated Amorphous

Kinetics of Growth and Recovery of Light-Induced Defects Under High-Intensity Illumination

1992 ◽  
Vol 258 ◽  
Author(s):  
Masao Isomura ◽  
Sigurd Wagner
Keyword(s):  
Light Intensity ◽  
Amorphous Silicon ◽  
High Intensity ◽  
Hydrogenated Amorphous Silicon ◽  
Increased Sensitivity ◽  
Induced Defects ◽  
Hydrogenated Amorphous ◽  
Kinetics Of ◽  
Diffusion Of Hydrogen

ABSTRACTWe report a study of the rates of generation and of annealing of the light-induced defects in hydrogenated amorphous silicon (a-Si:H). The rates of generation are found to be sensitive to temperature when the light intensity is high. This increased sensitivity to temperature at high rates suggests that a temperature-activated process such as hydrogen motion controls the rates of generation more when they are high. The rate of annealing at 130°C is strongly accelerated by illumination, and depends strongly on the light intensity. This may be explained by the diffusion of hydrogen, accelerated by excess carriers.

Sign in / Sign up

Export Citation Format

Share Document