Very low interface recombination velocity in (Al,Ga)As heterostructures grown by organometallic vapor‐phase epitaxy

L. W. Molenkamp; H. F. J. van’t Blik

doi:10.1063/1.341298

Very low interface recombination velocity in (Al,Ga)As heterostructures grown by organometallic vapor‐phase epitaxy

Journal of Applied Physics ◽

10.1063/1.341298 ◽

1988 ◽

Vol 64 (8) ◽

pp. 4253-4256 ◽

Cited By ~ 33

Author(s):

L. W. Molenkamp ◽

H. F. J. van’t Blik

Keyword(s):

Vapor Phase ◽

Vapor Phase Epitaxy ◽

Organometallic Vapor Phase Epitaxy ◽

Interface Recombination ◽

Interface Recombination Velocity ◽

Recombination Velocity

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Effect of Growth Interruption on Surface Recombination Velocity in GaInAsSb/AlGaAsSb Heterostructures Grown by Organometallic Vapor Phase Epitaxy

10.2172/824868 ◽

2004 ◽

Author(s):

CA Wang ◽

DA Shiau ◽

D Donetsky ◽

S Anikeev ◽

G Belenky ◽

...

Keyword(s):

Vapor Phase ◽

Surface Recombination ◽

Vapor Phase Epitaxy ◽

Surface Recombination Velocity ◽

Organometallic Vapor Phase Epitaxy ◽

Growth Interruption ◽

Recombination Velocity

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Effect of growth interruption on surface recombination velocity in GaInAsSb/AlGaAsSb heterostructures grown by organometallic vapor-phase epitaxy

Journal of Crystal Growth ◽

10.1016/j.jcrysgro.2004.09.020 ◽

2004 ◽

Vol 272 (1-4) ◽

pp. 711-718 ◽

Cited By ~ 2

Author(s):

C.A. Wang ◽

D.A. Shiau ◽

D. Donetsky ◽

S. Anikeev ◽

G. Belenky ◽

...

Keyword(s):

Vapor Phase ◽

Surface Recombination ◽

Vapor Phase Epitaxy ◽

Surface Recombination Velocity ◽

Organometallic Vapor Phase Epitaxy ◽

Growth Interruption ◽

Recombination Velocity

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Novel Precursors for Organometallic Vapor Phase Epitaxy

10.21236/ada251340 ◽

1992 ◽

Author(s):

G. B. Stringfellow

Keyword(s):

Vapor Phase ◽

Vapor Phase Epitaxy ◽

Organometallic Vapor Phase Epitaxy

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Ultrahigh mobility two‐dimensional electron gas in AlxGa1−xAs/GaAs heterostructures by organometallic vapor phase epitaxy

Applied Physics Letters ◽

10.1063/1.110614 ◽

1993 ◽

Vol 63 (14) ◽

pp. 1960-1962 ◽

Cited By ~ 3

Author(s):

Ricardo Basco ◽

Farid Agahi ◽

Kei May Lau

Keyword(s):

Vapor Phase ◽

Electron Gas ◽

Vapor Phase Epitaxy ◽

Organometallic Vapor Phase Epitaxy ◽

Two Dimensional ◽

Dimensional Electron ◽

Two Dimensional Electron Gas ◽

Dimensional Electron Gas

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Strong photoluminescence from AlP/GaP disordered superlattice grown by atmospheric pressure organometallic vapor phase epitaxy using tertiarybutylphosphine

Applied Physics Letters ◽

10.1063/1.108556 ◽

1993 ◽

Vol 62 (8) ◽

pp. 888-890 ◽

Cited By ~ 27

Author(s):

Xue‐Lun Wang ◽

Akihiro Wakahara ◽

Akio Sasaki

Keyword(s):

Vapor Phase ◽

Atmospheric Pressure ◽

Vapor Phase Epitaxy ◽

Organometallic Vapor Phase Epitaxy

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Luminescence properties of Er,O-codoped III–V semiconductors grown by organometallic vapor phase epitaxy

Physica B Condensed Matter ◽

10.1016/s0921-4526(99)00645-6 ◽

1999 ◽

Vol 273-274 ◽

pp. 770-773 ◽

Cited By ~ 32

Author(s):

Y Fujiwara ◽

T Kawamoto ◽

T Koide ◽

Y Takeda

Keyword(s):

Vapor Phase ◽

Vapor Phase Epitaxy ◽

Luminescence Properties ◽

Organometallic Vapor Phase Epitaxy

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Optimization of selective area growth of GaAs by low pressure organometallic vapor phase epitaxy for monolithic integrated circuits

Journal of Electronic Materials ◽

10.1007/bf02655263 ◽

1994 ◽

Vol 23 (2) ◽

pp. 159-166 ◽

Cited By ~ 2

Author(s):

H. Kanber ◽

S. X. Bar ◽

P. E. Norris ◽

C. Beckham ◽

M. Pacer

Keyword(s):

Integrated Circuits ◽

Vapor Phase ◽

Low Pressure ◽

Vapor Phase Epitaxy ◽

Selective Area Growth ◽

Organometallic Vapor Phase Epitaxy ◽

Selective Area ◽

Monolithic Integrated Circuits ◽

Area Growth

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Characterization of Hazy Morphology on AlInP/GaAs Epitaxial Wafers Grown by Organometallic Vapor-Phase Epitaxy

Journal of Electronic Materials ◽

10.1007/s11664-021-08832-9 ◽

2021 ◽

Author(s):

Hongyu Peng ◽

Tuerxun Ailihumaer ◽

Yafei Liu ◽

Kim Kisslinger ◽

Xiao Tong ◽

...

Keyword(s):

Vapor Phase ◽

Vapor Phase Epitaxy ◽

Organometallic Vapor Phase Epitaxy

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Observation of Photoinduced Alkyl Group Elimination from Precursors in Organometallic Vapor-Phase Epitaxy of Zn-Based II-VI Semiconductors

Japanese Journal of Applied Physics ◽

10.1143/jjap.30.l507 ◽

1991 ◽

Vol 30 (Part 2, No. 3B) ◽

pp. L507-L510 ◽

Cited By ~ 15

Author(s):

Shizuo Fujita ◽

Shin-ya Hirata ◽

Shigeo Fujita

Keyword(s):

Vapor Phase ◽

Alkyl Group ◽

Vapor Phase Epitaxy ◽

Organometallic Vapor Phase Epitaxy

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Effects of column III alkyl sources on deep levels in GaN grown by organometallic vapor phase epitaxy

Applied Physics Letters ◽

10.1063/1.115028 ◽

1995 ◽

Vol 67 (12) ◽

pp. 1721-1723 ◽

Cited By ~ 90

Author(s):

W. I. Lee ◽

T. C. Huang ◽

J. D. Guo ◽

M. S. Feng

Keyword(s):

Vapor Phase ◽

Vapor Phase Epitaxy ◽

Deep Levels ◽

Organometallic Vapor Phase Epitaxy

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