High deposition rate amorphous silicon‐based multijunction solar cell

1995 ◽  
Vol 66 (5) ◽  
pp. 595-597 ◽  
Author(s):  
S. Guha ◽  
X. Xu ◽  
J. Yang ◽  
A. Banerjee
Keyword(s):  
Solar Cell ◽  
Amorphous Silicon ◽  
Deposition Rate ◽  
High Deposition Rate ◽  
Multijunction Solar Cell ◽  
Silicon Based

Use of Transparent Conductive Oxide Materials with Low Indices of Refraction in Amorphous Silicon-Based Solar Cell Technology

2005 ◽  
Vol 862 ◽  
Author(s):  
Scott J. Jones ◽  
Joachim Doehler ◽  
Tongyu Liu ◽  
David Tsu ◽  
Jeff Steele ◽  
...  
Keyword(s):  
Solar Cell ◽  
Amorphous Silicon ◽  
Transparent Conductive Oxide ◽  
Open Circuit ◽  
Long Term Stability ◽  
Back Reflectors ◽  
Stability Issues ◽  
Silicon Based ◽  
Solar Cell Technology

AbstractNew types of transparent conductive oxides with low indices of refraction have been developed for use in optical stacks for the amorphous silicon (a-Si) solar cell and other thin film applications. The alloys are ZnO based with Si and MgF added to reduce the index of the materials through the creation of SiO2 or MgF2, with n=1.3-1.4, or the addition of voids in the materials. Alloys with 12-14% Si or Mg have indices of refraction at λ=800nm between 1.6 and 1.7. These materials are presently being used in optical stacks to enhance light scattering by Al/multi-layer/ZnO back reflectors in a-Si based solar cells to increase light absorption in the semiconductor layers and increase open circuit currents and boost device efficiencies. In contrast to Ag/ZnO back reflectors which have long term stability issues due to electromigration of Ag, these Al based back reflectors should be stable and usable in manufactured PV products. In this manuscript, structural properties for the materials will be reported as well as the performance of solar cell devices made using these new types of materials.

scholarly journals Numerical Design of Ultrathin Hydrogenated Amorphous Silicon-Based Solar Cell

2021 ◽  
Vol 2021 ◽  
pp. 1-13
Author(s):  
F. X. Abomo Abega ◽  
A. Teyou Ngoupo ◽  
J. M. B. Ndjaka
Keyword(s):  
Solar Cells ◽  
Solar Cell ◽  
Amorphous Silicon ◽  
Buffer Layer ◽  
Defect Density ◽  
Hydrogenated Amorphous Silicon ◽  
Theoretical Work ◽  
Silicon Based ◽  
The Impact ◽  
Hydrogenated Amorphous

Numerical modelling is used to confirm experimental and theoretical work. The aim of this work is to present how to simulate ultrathin hydrogenated amorphous silicon- (a-Si:H-) based solar cells with a ITO BRL in their architectures. The results obtained in this study come from SCAPS-1D software. In the first step, the comparison between the J-V characteristics of simulation and experiment of the ultrathin a-Si:H-based solar cell is in agreement. Secondly, to explore the impact of certain properties of the solar cell, investigations focus on the study of the influence of the intrinsic layer and the buffer layer/absorber interface on the electrical parameters ( J SC , V OC , FF, and η ). The increase of the intrinsic layer thickness improves performance, while the bulk defect density of the intrinsic layer and the surface defect density of the buffer layer/ i -(a-Si:H) interface, respectively, in the ranges [109 cm-3, 1015 cm-3] and [1010 cm-2, 5 × 10 13  cm-2], do not affect the performance of the ultrathin a-Si:H-based solar cell. Analysis also shows that with approximately 1 μm thickness of the intrinsic layer, the optimum conversion efficiency is 12.71% ( J SC = 18.95   mA · c m − 2 , V OC = 0.973   V , and FF = 68.95 % ). This work presents a contribution to improving the performance of a-Si-based solar cells.

Amorphous Silicon based Solar Cell Technologies: Status, Challenges, and Opportunities

2004 ◽  
Vol 808 ◽  
Author(s):  
Rajeewa R. Arya
Keyword(s):  
Solar Cell ◽  
Amorphous Silicon ◽  
Commercial Application ◽  
Amorphous Silicon Solar Cell ◽  
Building Integrated Photovoltaic ◽  
Photovoltaic Applications ◽  
Challenges And Opportunities ◽  
Module Development ◽  
Silicon Based ◽  
Conversion Efficiencies

ABSTRACTAdvances in amorphous silicon solar cell and module development over the past two decades has led to widespread commercial application in consumer and building integrated photovoltaic applications (BIPV). The technology has taken two pathways: (i) superstrate and (ii) substrate. Both pathways have unique advantages over crystalline modules and have demonstrated promising stability and reliability with continuous improvement in performance. Multi-junction modules with amorphous and microcrystalline silicon have demonstrated initial conversion efficiencies in the range of 13%-13.5%.

Silicon-Based Solar Cell Fabricated by Metal-Induced Lateral Crystallization of Amorphous Silicon Film

2006 ◽  
Vol 45 (10A) ◽  
pp. 7675-7676 ◽  
Author(s):  
Jun-Dar Hwang ◽  
Tzu-Yi Chi ◽  
Jun-Chin Liu ◽  
Chung-Yuan Kung ◽  
In-Cha Hsein
Keyword(s):  
Solar Cell ◽  
Amorphous Silicon ◽  
Silicon Film ◽  
Amorphous Silicon Film ◽  
Lateral Crystallization ◽  
Silicon Based

Problems of Power Feeding in Large Area PECVD of Amorphous Silicon

1999 ◽  
Vol 557 ◽  
Author(s):  
U. Stephan ◽  
J. Kuske ◽  
H. Grüger ◽  
A. Kottwitz
Keyword(s):  
Amorphous Silicon ◽  
Deposition Rate ◽  
Standing Waves ◽  
Plasma Source ◽  
High Deposition Rate ◽  
Plasma Reactors ◽  
Power Losses ◽  
Large Area ◽  
Power Coupling ◽  
Reactor Types

AbstractThe production of amorphous silicon, e.g. for solar cells, requires large area, high-deposition rate plasma reactors. Increasing the radio frequency from the conventional 13.56MHz up to VHF has demonstrated higher deposition and etch rates and lower particle generation, a reduced ion bombardement and lower breakdown, process and bias voltages.But otherwise the use of VHF leads to some problems. The non-uniformity of deposition rate increase due to the generation of standing waves (TEM wave) and evanescent waveguide modes (TE waves) at the electrode surface.Increasing the frequency and/or the deposition area the plasma impedance, the capacitic stray impedance of the RF electrode and other parasitic capacitive impedances decrease. Increasing the frequency and/or the RF power, the phase angle of the discharge and of the impedance at every point at the lines between the RF matching network an the RF electrode tends more and more towards -90°. This results in increasing currents and standing waves with extremly high local current maximas. Increasing resistances of lines and contacts due to the skin effect and loss-caused heating up of the lines the power losses increase extremely, up to 90% and more. In spite of the increasing of the coupled power, the plasma power does not increase. Thermal destructions of the lines due to extreme expansion or melting are possible.Some solutions to reduce the non-uniformity of the deposition rate like multipower feeding, central backside power feeding, electrode segmentation, use of load impedances, published in former publications, will be discussed in connection with several reactor types (coaxial, large area, long plasma source) in view of the efficiency of power coupling and the practical realization. Solutions to minimize the power losses at the lines will be presented.

High-deposition-rate of microcrystalline silicon solar cell by using VHF PECVD

2006 ◽  
Vol 506-507 ◽  
pp. 33-37 ◽  
Author(s):  
Youji Nakano ◽  
Saneyuki Goya ◽  
Toshiya Watanabe ◽  
Nobuki Yamashita ◽  
Yoshimichi Yonekura
Keyword(s):  
Solar Cell ◽  
Deposition Rate ◽  
Silicon Solar Cell ◽  
High Deposition Rate ◽  
Microcrystalline Silicon
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