Evolution of electronic properties at the p‐GaAs(Cs,O) surface during negative electron affinity state formation

1995 ◽  
Vol 66 (16) ◽  
pp. 2122-2124 ◽  
Author(s):  
V. L. Alperovich ◽  
A. G. Paulish ◽  
H. E. Scheibler ◽  
A. S. Terekhov
Keyword(s):  
Electronic Properties ◽  
State Formation ◽  
Electron Affinity ◽  
Negative Electron Affinity

Ultra thin transition metal oxide coatings on diamond for thermionic applications

2012 ◽  
Vol 1511 ◽  
Author(s):  
Amit K. Tiwari ◽  
Jonathan P. Goss ◽  
Patrick R. Briddon ◽  
Nick G. Wright ◽  
Alton B. Horsfall ◽  
...  
Keyword(s):  
Electronic Properties ◽  
Electron Affinity ◽  
Density Functional ◽  
Semiconductor Device ◽  
Device Fabrication ◽  
Negative Electron Affinity ◽  
Electron Affinities ◽  
Oxide Coatings ◽  
Electron Emitters ◽  
Metal Oxide Coatings

ABSTRACTWe have investigated, using density functional simulations, the energetics and the electronic properties of oxides of selected transition metals, TMs, adsorbed onto a dia-mond (001) surface. We find that stoichiometric oxides of TMs, particularly Ti and Zn,influence the electron affinity of diamond strongly. The electron affinities of stoichiomet-ric oxides of Ti and Zn are calculated to be around −3 eV, significantly higher than 1.9 eV of commonly used H–termination. The reactions of TMs with an oxygenated diamond are found to be highly exothermic. Based upon the energetics and the electronic properties, we propose that in the regime of ultra thin films, oxides of TMs are promising options for surface coating of diamond–based electron emitters, as these coatings are compatible with semiconductor device fabrication processes, while having the benefit of inducing a large negative electron affinity.

Structural and Electronic Properties of Negative Electron Affinity Epitaxial Diamond (110) Films Studied Using Atomic Resolution UHV STM

1998 ◽  
Vol 509 ◽  
Author(s):  
S.C. Lim ◽  
R.E. Stallcup ◽  
I. Akwani ◽  
J.M. Perez
Keyword(s):  
Electronic Properties ◽  
Electron Affinity ◽  
Epitaxial Films ◽  
Atomic Resolution ◽  
Scanning Tunneling ◽  
Negative Electron Affinity ◽  
Tunneling Microscopy ◽  
Structural And Electronic Properties ◽  
Theoretical Predictions ◽  
Photoelectric Threshold

AbstractWe report ultrahigh vacuum (UHV) scanning tunneling microscopy (STM) studies of the structural and electronic properties of epitaxial diamond (110) films. We observe that epitaxial diamond (110) films grow very rough due to striations. The striations are found to be due to the appearance of(111) faces and contain (100) steps. UHV STM atomic resolution images of the diamond (110) films show a (lxi) zigzag structure that measures 1.5 ± 0.1 Å × 1.5 ± 0.1 Å, in agreement with theoretical predictions for the hydrogen terminated diamond (110) surface. Ultraviolet spectroscopy shows that the epitaxial films have a photoelectric threshold of 5.3 ± 0.1 eV, providing evidence that the films have a negative electron affinity surface.

scholarly journals The degradation of quantum efficiency in negative electron affinity GaAs photocathodes under gas exposure

2014 ◽  
Vol 47 (5) ◽  
pp. 055110 ◽  
Author(s):  
N Chanlek ◽  
J D Herbert ◽  
R M Jones ◽  
L B Jones ◽  
K J Middleman ◽  
...  
Keyword(s):  
Quantum Efficiency ◽  
Electron Affinity ◽  
Negative Electron Affinity ◽  
Gas Exposure
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