Normal incidence intersubband absorption in vertical quantum wells

1995 ◽  
Vol 66 (2) ◽  
pp. 218-220 ◽  
Author(s):  
V. Berger ◽  
G. Vermeire ◽  
P. Demeester ◽  
C. Weisbuch
Keyword(s):  
Quantum Wells ◽  
Normal Incidence ◽  
Intersubband Absorption

Observation of normal-incidence intersubband absorption inn-typeAl0.09Ga0.91Sb quantum wells

1992 ◽  
Vol 46 (11) ◽  
pp. 7244-7247 ◽  
Author(s):  
E. R. Brown ◽  
S. J. Eglash ◽  
K. A. McIntosh
Keyword(s):  
Quantum Wells ◽  
Normal Incidence ◽  
Intersubband Absorption

P-Type Quantum Well Infrared Photodetectors Grown by OMVPE

1991 ◽  
Vol 240 ◽  
Author(s):  
W. S. Hobson ◽  
A. Zussman ◽  
J. De Jong ◽  
B. F. Levine
Keyword(s):  
Quantum Well ◽  
Quantum Wells ◽  
Normal Incidence ◽  
Infrared Photodetectors ◽  
Cutoff Wavelength ◽  
Peak Wavelength ◽  
Long Wavelength ◽  
Quantum Well Infrared Photodetectors ◽  
Intersubband Absorption ◽  
P Type

ABSTRACTWe report on the growth and fabrication of p-doped long wavelength GaAs/AlxGa1−x As quantum well infrared photodetectors (QWIP) grown by organometallic vapor phase epitaxy. The operation of these devices is based on the photocurrent induced through valence band intersubband absorption by holes and, unlike n-doped QWIPs, can utilize normal incidence illumination. Carbon and zinc were used as the p-type dopants in a low-pressure (30 Torr) vertical-geometry reactor. The Zn-doped QWIP consisted of fifty periods of 48 nm-thick undoped Al0.36Ga0.64As barriers and nominally 4 nm-thick doped GaAs quantum wells. Using normal incidence, a quantum efficiency of η = 2.5% and a detectivity of at 77K were obtained for a peak wavelength λp = 6.8 μm and a cutoff wavelength λ∫ =7.6 μm. The C-doped QWIP had 54 nm-thick Al0.31Ga0.69As barriers and exhibited a normal incidence These initial studies indicate the superiority of carbon to zinc as the p-type dopant for these structures. The detectivity of the C-doped QWIPs is about four times less than n-doped QWIPs for the same λp but have the advantage of utilizing normal incidence illumination.

Normal-incidence intersubband absorption in AlGaSb quantum wells

2002 ◽  
Vol 92 (1) ◽  
pp. 641-643 ◽  
Author(s):  
Jean-Marc Jancu ◽  
Franco Bassani ◽  
Paul Voisin
Keyword(s):  
Quantum Wells ◽  
Normal Incidence ◽  
Intersubband Absorption

scholarly journals Polarization-dependent intersubband absorption and normal-incidence infrared detection in p-type Si/SiGe quantum wells

1998 ◽  
Vol 23 (1) ◽  
pp. 61-66 ◽  
Author(s):  
P. Kruck ◽  
A. Weichselbaum ◽  
M. Helm ◽  
T. Fromherz ◽  
G. Bauer ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Normal Incidence ◽  
Infrared Detection ◽  
Intersubband Absorption ◽  
P Type ◽  
Sige Quantum Wells

Intersubband absorption at normal incidence by m-plane ZnO/MgZnO quantum wells

2019 ◽  
Author(s):  
Adrian Hierro ◽  
Miguel Montes Bajo ◽  
Julen Tamayo-Arriola ◽  
José María Ulloa ◽  
Nolwenn Le Biavan ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Normal Incidence ◽  
Intersubband Absorption

Evaluation of electron-phonon coupling of Al0.27Ga0.73As/GaAs quantum wells by normal incidence reflectance

1991 ◽  
Vol 79 (7) ◽  
pp. 561-565 ◽  
Author(s):  
S. Selci ◽  
A. Cricenti ◽  
M. Righini ◽  
C. Petrillo ◽  
F. Sacchetti ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Normal Incidence ◽  
Phonon Coupling ◽  
Electron Phonon Coupling
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