A study of minority carrier lifetime versus doping concentration inn‐type GaAs grown by metalorganic chemical vapor deposition

1992 ◽  
Vol 72 (4) ◽  
pp. 1436-1442 ◽  
Author(s):  
G. B. Lush ◽  
H. F. MacMillan ◽  
B. M. Keyes ◽  
D. H. Levi ◽  
M. R. Melloch ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Metalorganic Chemical Vapor Deposition ◽  
Doping Concentration ◽  
Carrier Lifetime ◽  
Minority Carrier ◽  
Chemical Vapor ◽  
Minority Carrier Lifetime ◽  
Metalorganic Chemical

Effect of Doping on the Growth of InGaP by Low Pressure Metalorganic Chemical Vapor Deposition

1993 ◽  
Vol 300 ◽  
Author(s):  
C.H. Wu ◽  
M.S. Feng ◽  
C.C. Wu
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Metalorganic Chemical Vapor Deposition ◽  
Doping Concentration ◽  
Chemical Vapor ◽  
Energy Shift ◽  
Low Pressure ◽  
Growth Layer ◽  
Dopant Incorporation ◽  
Metalorganic Chemical

ABSTRACTA study of the effect of dopant incorporation on the growth of InGaP by low pressure metalorganic chemical vapor deposition has been performed, in which diethylzinc (DEZn) and H2Se are used as p and n-type doping sources, respectively. The enhancement of interdiffusion, i.e., the disordering of a InGaP layer has been observed due to the introduction of Zn into the growth layer, as indicated by the decrease of intensity of the extra spots on TEM diffraction results. In addition, streaky and wavy diffraction pattern for Se-doped layer reveals the formation of anti-phase domains on a growth layer. According to PL measurement, the emission energy of the grown layer is a function of doping concentration, for which the energy shift as high as 141 meV has been obtained at heavily zinc doping concentration. Therefore, by varying the doping concentration, energy shift can be controlled, providing a potential for its application in optical devices.

Low Temperature Metalorganic Chemical Vapor Deposition of Semiconductor Thin Films for Surface Passivation of Photovoltaic Devices

MRS Advances ◽  
2016 ◽  
Vol 1 (50) ◽  
pp. 3379-3390
Author(s):  
Sneha Banerjee ◽  
Rajendra Dahal ◽  
Ishwara Bhat
Keyword(s):  
Vapor Deposition ◽  
Metalorganic Chemical Vapor Deposition ◽  
Carrier Lifetime ◽  
Surface Passivation ◽  
Minority Carrier ◽  
Chemical Vapor ◽  
Minority Carrier Lifetime ◽  
Photovoltaic Devices ◽  
Ir Detectors ◽  
Conformal Coverage

ABSTRACT Three II-VI wide bandgap compound semiconductors have been investigated for surface passivation of various photovoltaic devices. First part of this work focuses on the surface passivation of HgCdTe IR detectors using CdTe. A new metalorganic chemical vapor deposition (MOCVD) process has been developed that involves depositing CdTe films at much lower temperature (< 175°C) than the conventional processes used till now. Deposition rate as high as 420nm/h was obtained using this novel experimental setup. Favorable conformal coverage on high aspect ratio HgCdTe devices along with a significant minority carrier lifetime improvement was obtained. Another II-VI semiconductor, namely, CdS was investigated as a surface passivant for HgCdTe IR detectors. It was deposited by MOCVD as well as atomic layer deposition (ALD) and was studied for optimal conformal coverage on high aspect ratio structures. Surface passivation of p-type Si wafer has also been demonstrated using p-ZnTe grown by MOCVD, for possible application in solar cells. Preliminary work showed a remarkable improvement in the minority carrier lifetime of Si light absorbing layer after passivation with a thin layer of ZnTe.

scholarly journals Si Delta Doped GaN Grown by Low-Pressure Metalorganic Chemical Vapor Deposition

1999 ◽  
Vol 4 (S1) ◽  
pp. 305-309
Author(s):  
Jong-Hee Kim ◽  
Gye Mo Yang ◽  
Sung Chul Choi ◽  
Ji Youn Choi ◽  
Hyun Kyung Cho ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Metalorganic Chemical Vapor Deposition ◽  
Doping Concentration ◽  
Chemical Vapor ◽  
Low Pressure ◽  
Voltage Measurement ◽  
Desorption Process ◽  
Delta Doping ◽  
Metalorganic Chemical

Si delta-doping in the GaN layer has been successfully demonstrated by low-pressure metalorganic chemical vapor deposition at a growth temperature of 1040 . Si delta-doping concentration increases and then decreases with an increase in delta-doping time. This indicates that delta-doping concentration is limited by the desorption process owing to much higher thermal decomposition efficiency of silane at high growth temperatures of GaN. In addition, it was observed that the use of a post-purge step in the ammonia ambient reduces Si delta-doping concentration. From capacitance-voltage measurement, a sharp carrier concentration profile with a full-width at half maximum of 4.1 nm has been achieved with a high peak concentration of 9.8 1018 cm−3.

Si Delta Doped GaN Grown by Low-Pressure Metalorganic Chemical Vapor Deposition

1998 ◽  
Vol 537 ◽  
Author(s):  
Jong-Hee Kim ◽  
Gye Mo Yang ◽  
Sung Chul Choi ◽  
Ji Youn Choi ◽  
Hyun Kyung Cho ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Metalorganic Chemical Vapor Deposition ◽  
Doping Concentration ◽  
Chemical Vapor ◽  
Low Pressure ◽  
Voltage Measurement ◽  
Desorption Process ◽  
Delta Doping ◽  
Metalorganic Chemical

AbstractSi delta-doping in the GaN layer has been successfully demonstrated by low-pressure metalorganic chemical vapor deposition at a growth temperature of 1040°C. Si delta-doping concentration increases and then decreases with an increase in delta-doping time. This indicates that delta-doping concentration is limited by the desorption process owing to much higher thermal decomposition efficiency of silane at high growth temperatures of GaN. In addition, it was observed that the use of a post-purge step in the ammonia ambient reduces Si delta-doping concentration. From capacitance-voltage measurement, a sharp carrier concentration profile with a full-width at half maximum of 4.1 nm has been achieved with a high peak concentration of 9.8 x 1018 cm-3

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