Low‐temperature electron cyclotron resonance chemical vapor deposition of very low resistivity TiN for InP metallization using metalorganic precursors

1995 ◽  
Vol 66 (20) ◽  
pp. 2664-2666 ◽  
Author(s):  
Mohamed Boumerzoug ◽  
Peter Mascher ◽  
John G. Simmons
Keyword(s):  
Chemical Vapor Deposition ◽  
Low Temperature ◽  
Vapor Deposition ◽  
Cyclotron Resonance ◽  
Electron Cyclotron Resonance ◽  
Chemical Vapor ◽  
Electron Cyclotron ◽  
Low Resistivity ◽  
Temperature Electron

scholarly journals Low Temperature (180°C) Growth of Smooth Surface Germanium Epilayers on Silicon Substrates Using Electron Cyclotron Resonance Chemical Vapor Deposition

2014 ◽  
Vol 2014 ◽  
pp. 1-8 ◽  
Author(s):  
Teng-Hsiang Chang ◽  
Chiao Chang ◽  
Yen-Ho Chu ◽  
Chien-Chieh Lee ◽  
Jenq-Yang Chang ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Low Temperature ◽  
Vapor Deposition ◽  
Cyclotron Resonance ◽  
Smooth Surface ◽  
High Efficiency ◽  
Electron Cyclotron Resonance ◽  
Low Cost ◽  
Chemical Vapor ◽  
Electron Cyclotron

This paper describes a new method to grow thin germanium (Ge) epilayers (40 nm) on c-Si substrates at a low growth temperature of 180°C using electron cyclotron resonance chemical vapor deposition (ECR-CVD) process. The full width at half maximum (FWHM) of the Ge (004) in X-ray diffraction pattern and the compressive stain in a Ge epilayer of 683 arcsec and 0.12% can be achieved. Moreover, the Ge/Si interface is observed by transmission electron microscopy to demonstrate the epitaxial growth of Ge on Si and the surface roughness is 0.342 nm. The thin-thickness and smooth surface of Ge epilayer grown on Si in this study is suitable to be a virtual substrate for developing the low cost and high efficiency III-V/Si tandem solar cells in our opinion. Furthermore, the low temperature process can not only decrease costs but can also reduce the restriction of high temperature processes on device manufacturing.

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