Effect of grain boundaries on the formation of luminescent porous silicon from polycrystalline silicon films

1994 ◽  
Vol 65 (14) ◽  
pp. 1787-1789 ◽  
Author(s):  
P. Guyader ◽  
P. Joubert ◽  
M. Guendouz ◽  
C. Beau ◽  
M. Sarret
Keyword(s):  
Porous Silicon ◽  
Grain Boundaries ◽  
Polycrystalline Silicon ◽  
Silicon Films ◽  
Polycrystalline Silicon Films

Current Paths over Grain Boundaries in Polycrystalline Silicon Films

2001 ◽  
Vol 40 (Part 2, No. 2A) ◽  
pp. L97-L99 ◽  
Author(s):  
Mutsumi Kimura ◽  
Satoshi Inoue ◽  
Tatsuya Shimoda ◽  
Toshiyuki Sameshima
Keyword(s):  
Grain Boundaries ◽  
Polycrystalline Silicon ◽  
Silicon Films ◽  
Polycrystalline Silicon Films

Electroluminescent porous silicon p-n junction using polycrystalline silicon films

1996 ◽  
Vol 102 ◽  
pp. 399-403 ◽  
Author(s):  
F. Chane-Ché-Laï ◽  
C. Beau ◽  
D. Briand ◽  
P. Joubert
Keyword(s):  
Porous Silicon ◽  
Polycrystalline Silicon ◽  
Silicon Films ◽  
Polycrystalline Silicon Films

Electrically inactive grain boundaries in rapid thermal annealed boron‐implanted polycrystalline silicon films

1990 ◽  
Vol 56 (25) ◽  
pp. 2536-2538 ◽  
Author(s):  
A. Almaggoussi ◽  
J. Sicart ◽  
J. L. Robert ◽  
G. Chaussemy ◽  
A. Laugier
Keyword(s):  
Grain Boundaries ◽  
Polycrystalline Silicon ◽  
Silicon Films ◽  
Polycrystalline Silicon Films

Effect of grain alignment on lateral carrier transport in aligned-crystalline silicon films on polycrystalline substrates

2007 ◽  
Vol 22 (4) ◽  
pp. 821-825 ◽  
Author(s):  
Woong Choi ◽  
Alp T. Findikoglu ◽  
Manuel J. Romero ◽  
Mowafak Al-Jassim
Keyword(s):  
Grain Boundaries ◽  
Polycrystalline Silicon ◽  
Carrier Transport ◽  
Crystalline Silicon ◽  
Silicon Films ◽  
Dangling Bond ◽  
Grain Alignment ◽  
Bond Density ◽  
Polycrystalline Silicon Films ◽  
Trapping Sites

We report the studies on the effect of grain alignment on lateral carrier transport in nominally 〈001〉-oriented aligned-crystalline silicon (ACSi) films on polycrystalline substrates. With improving grain alignment, energy barrier height at the grain boundaries was reduced from 150 to less than 1 meV, and both conductivity and Hall mobility became less sensitive to hydrogen passivation. This suggests that the dangling bonds in ACSi films are a major source of trapping sites, and that they become less dominant with improving grain alignment. These results demonstrate that improving grain alignment enhances the lateral carrier transport in small-grained (≤1 μm) polycrystalline silicon films, by reducing dangling bond density at the grain boundaries.

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