Optimization of growth conditions for strain compensated Ga0.32In0.68As/Ga0.61In0.39As multiple quantum wells

1994 ◽  
Vol 65 (18) ◽  
pp. 2311-2313 ◽  
Author(s):  
A. D. Smith ◽  
A. T. R. Briggs ◽  
K. Scarrott ◽  
Xiao Zhou ◽  
U. Bangert
Keyword(s):  
Quantum Wells ◽  
Growth Conditions ◽  
Multiple Quantum Wells ◽  
Multiple Quantum

Realization of high efficiency AlGaN-based multiple quantum wells grown on nano-patterned sapphire substrates

CrystEngComm ◽  
2020 ◽  
Author(s):  
Yuanhao Sun ◽  
Fujun Xu ◽  
Na Zhang ◽  
Jing Lang ◽  
Jiaming Wang ◽  
...  
Keyword(s):  
Critical Temperature ◽  
Quantum Wells ◽  
High Efficiency ◽  
Growth Conditions ◽  
Multiple Quantum Wells ◽  
Multiple Quantum ◽  
Sapphire Substrates ◽  
Patterned Sapphire Substrates

Growth of AlGaN-based multiple quantum wells (MQWs) has been attempted on nano-patterned sapphire substrates (NPSSs). By adopting a critical-temperature approach and optimizing the growth conditions of V/III ratio and Si...

Influence of growth conditions on Al-Ga interdiffusion in low-temperature grown AlGaAs/GaAs multiple quantum wells

1997 ◽  
Vol 71 (12) ◽  
pp. 1676-1678 ◽  
Author(s):  
W. Feng ◽  
F. Chen ◽  
W. Q. Cheng ◽  
Q. Huang ◽  
J. M. Zhou
Keyword(s):  
Low Temperature ◽  
Quantum Wells ◽  
Growth Conditions ◽  
Multiple Quantum Wells ◽  
Multiple Quantum

GaN epilayers and AlGaN/GaN multiple quantum wells grown on freestanding [1100] oriented GaN substrates

2002 ◽  
Vol 743 ◽  
Author(s):  
C. Q. Chen ◽  
M. E. Gaevski ◽  
W. H. Sun ◽  
E. Kuokstis ◽  
J. W. Yang ◽  
...  
Keyword(s):  
Surface Morphology ◽  
Quantum Wells ◽  
Optical Pumping ◽  
Chemical Vapor ◽  
Growth Conditions ◽  
Stimulated Emission ◽  
Multiple Quantum Wells ◽  
Molar Ratio ◽  
Band Edge Emission ◽  
Multiple Quantum

AbstractWe report on the homoepitaxial growth of GaN on freestanding [1100] oriented GaN substrates using metalorganic chemical vapor deposition. A proper pretreatment of the substrates was found to be essential for the GaN homoepitaxy. The influence of growth conditions such as V/III molar-ratio and temperature on the surface morphology and optical properties of epilayers was investigated. Optimized pretreatment and growth conditions led to high quality [1100] oriented GaN epilayers with a smooth surface morphology and strong band-edge emission. These layers also exhibited strong room temperature stimulated emission under high intensity pulsed optical pumping. Based on these GaN epilayer, AlGaN/GaN multiple quantum wells have been grown on the freestanding M-plane GaN. Photoluminescence data confirm that built-in electric field for M-plane structures is very weak, and this situation results in a stronger PL intensity in comparison with C-plane multiple quantum wells in tests at low excitation level.

Strained InGaAs/GaAs Multiple Quantum Wells Grown on Planar and Pre-Patterned GaAs(100) Substrates VIA Molecular Beam Epitaxy: Applications to Light Modulators and Detectors

1991 ◽  
Vol 228 ◽  
Author(s):  
Li Chen ◽  
Kezhong Hu ◽  
K. C. Rajkumar ◽  
S. Guhae ◽  
R. Kapre ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Molecular Beam ◽  
Contrast Ratio ◽  
Growth Conditions ◽  
Optical Quality ◽  
Multiple Quantum Wells ◽  
Multiple Quantum ◽  
Mbe Growth ◽  
Light Modulators ◽  
Transmission Electron

ABSTRACTWe report the realization of high quality strained InGaAs/GaAs multiple quantum wells (MQW) grown on planar GaAs (100) substrates through optimization of molecular beam epitaxical (MBE) growth conditions and structure. Such MQWs containing ∼ 11% In have lead to the realization of an asymmetric Fabry-Perot (ASFP) reflection modulator with a room temperature contrast ratio of 66:1 and an on-state reflectivity of 30%. For In composition ≥ 0.2, the improved optical quality for very thick (gt;2μm) InGaAs/GaAs MQWs grown on pre-patterned substrates is demonstrated via transmission electron microscopy (TEM) and micro-absorption measurements.

Impact of InGaN growth conditions on structural stability under high temperature process in InGaN/GaN multiple quantum wells

2011 ◽  
Vol 8 (7-8) ◽  
pp. 2016-2018 ◽  
Author(s):  
Toshiki Hikosaka ◽  
Tomonari Shioda ◽  
Yoshiyuki Harada ◽  
Koichi Tachibana ◽  
Naoharu Sugiyama ◽  
...  
Keyword(s):  
High Temperature ◽  
Quantum Wells ◽  
Structural Stability ◽  
Growth Conditions ◽  
Multiple Quantum Wells ◽  
Multiple Quantum ◽  
High Temperature Process

FEMTOSECOND SPECTRAL HOLE-BURNING IN GaAs/AlGaAs MULTIPLE QUANTUM WELLS

1987 ◽  
Vol 48 (C5) ◽  
pp. C5-511-C5-515 ◽  
Author(s):  
J. L. OUDAR ◽  
J. DUBARD ◽  
F. ALEXANDRE ◽  
D. HULIN ◽  
A. MIGUS ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Multiple Quantum Wells ◽  
Hole Burning ◽  
Spectral Hole Burning ◽  
Multiple Quantum ◽  
Spectral Hole

FAR INFRARED MAGNETO-ABSORPTION STUDY OF BARRIER IMPURITIES AND SCREENING IN GaAs/AlGaAs MULTIPLE QUANTUM WELLS

1987 ◽  
Vol 48 (C5) ◽  
pp. C5-239-C5-242 ◽  
Author(s):  
E. GLASER ◽  
B. V. SHANABROOK ◽  
R. J. WAGNER ◽  
R. L. HAWKINS ◽  
W. J. MOORE ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Far Infrared ◽  
Multiple Quantum Wells ◽  
Multiple Quantum ◽  
Absorption Study

Fabrication and luminescent properties of core-shell InGaN/GaN multiple quantum wells on GaN nanopillars

2012 ◽  
Vol 100 (26) ◽  
pp. 261103 ◽  
Author(s):  
J.-R. Chang ◽  
S.-P. Chang ◽  
Y.-J. Li ◽  
Y.-J. Cheng ◽  
K.-P. Sou ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Luminescent Properties ◽  
Multiple Quantum Wells ◽  
Core Shell ◽  
Multiple Quantum

Atomic scale characterization of GaInN/GaN multiple quantum wells in V-shaped pits

2011 ◽  
Vol 98 (18) ◽  
pp. 181904 ◽  
Author(s):  
Shigetaka Tomiya ◽  
Yuya Kanitani ◽  
Shinji Tanaka ◽  
Tadakatsu Ohkubo ◽  
Kazuhiro Hono
Keyword(s):  
Quantum Wells ◽  
Atomic Scale ◽  
Multiple Quantum Wells ◽  
Multiple Quantum ◽  
Scale Characterization
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