Impact of InGaN growth conditions on structural stability under high temperature process in InGaN/GaN multiple quantum wells

2011 ◽  
Vol 8 (7-8) ◽  
pp. 2016-2018 ◽  
Author(s):  
Toshiki Hikosaka ◽  
Tomonari Shioda ◽  
Yoshiyuki Harada ◽  
Koichi Tachibana ◽  
Naoharu Sugiyama ◽  
...  
Keyword(s):  
High Temperature ◽  
Quantum Wells ◽  
Structural Stability ◽  
Growth Conditions ◽  
Multiple Quantum Wells ◽  
Multiple Quantum ◽  
High Temperature Process

High-temperature photoluminescence and photoluminescence excitation spectroscopy of Al0.60Ga0.40N/Al0.70Ga0.30N multiple quantum wells

2017 ◽  
Vol 10 (2) ◽  
pp. 021002 ◽  
Author(s):  
Hideaki Murotani ◽  
Katsuto Nakamura ◽  
Tomonori Fukuno ◽  
Hideto Miyake ◽  
Kazumasa Hiramatsu ◽  
...  
Keyword(s):  
High Temperature ◽  
Quantum Wells ◽  
Multiple Quantum Wells ◽  
Multiple Quantum ◽  
Photoluminescence Excitation

Realization of high efficiency AlGaN-based multiple quantum wells grown on nano-patterned sapphire substrates

CrystEngComm ◽  
2020 ◽  
Author(s):  
Yuanhao Sun ◽  
Fujun Xu ◽  
Na Zhang ◽  
Jing Lang ◽  
Jiaming Wang ◽  
...  
Keyword(s):  
Critical Temperature ◽  
Quantum Wells ◽  
High Efficiency ◽  
Growth Conditions ◽  
Multiple Quantum Wells ◽  
Multiple Quantum ◽  
Sapphire Substrates ◽  
Patterned Sapphire Substrates

Growth of AlGaN-based multiple quantum wells (MQWs) has been attempted on nano-patterned sapphire substrates (NPSSs). By adopting a critical-temperature approach and optimizing the growth conditions of V/III ratio and Si...

High-temperature excitons and enhanced electroabsorption in InGaAs/InAlAs multiple quantum wells

1985 ◽  
Vol 21 (13) ◽  
pp. 574 ◽  
Author(s):  
K. Wakita ◽  
Y. Kawamura ◽  
Y. Yoshikuni ◽  
H. Asahi
Keyword(s):  
High Temperature ◽  
Quantum Wells ◽  
Multiple Quantum Wells ◽  
Multiple Quantum

Optimization of growth conditions for strain compensated Ga0.32In0.68As/Ga0.61In0.39As multiple quantum wells

1994 ◽  
Vol 65 (18) ◽  
pp. 2311-2313 ◽  
Author(s):  
A. D. Smith ◽  
A. T. R. Briggs ◽  
K. Scarrott ◽  
Xiao Zhou ◽  
U. Bangert
Keyword(s):  
Quantum Wells ◽  
Growth Conditions ◽  
Multiple Quantum Wells ◽  
Multiple Quantum

Influence of growth conditions on Al-Ga interdiffusion in low-temperature grown AlGaAs/GaAs multiple quantum wells

1997 ◽  
Vol 71 (12) ◽  
pp. 1676-1678 ◽  
Author(s):  
W. Feng ◽  
F. Chen ◽  
W. Q. Cheng ◽  
Q. Huang ◽  
J. M. Zhou
Keyword(s):  
Low Temperature ◽  
Quantum Wells ◽  
Growth Conditions ◽  
Multiple Quantum Wells ◽  
Multiple Quantum

GaN epilayers and AlGaN/GaN multiple quantum wells grown on freestanding [1100] oriented GaN substrates

2002 ◽  
Vol 743 ◽  
Author(s):  
C. Q. Chen ◽  
M. E. Gaevski ◽  
W. H. Sun ◽  
E. Kuokstis ◽  
J. W. Yang ◽  
...  
Keyword(s):  
Surface Morphology ◽  
Quantum Wells ◽  
Optical Pumping ◽  
Chemical Vapor ◽  
Growth Conditions ◽  
Stimulated Emission ◽  
Multiple Quantum Wells ◽  
Molar Ratio ◽  
Band Edge Emission ◽  
Multiple Quantum

AbstractWe report on the homoepitaxial growth of GaN on freestanding [1100] oriented GaN substrates using metalorganic chemical vapor deposition. A proper pretreatment of the substrates was found to be essential for the GaN homoepitaxy. The influence of growth conditions such as V/III molar-ratio and temperature on the surface morphology and optical properties of epilayers was investigated. Optimized pretreatment and growth conditions led to high quality [1100] oriented GaN epilayers with a smooth surface morphology and strong band-edge emission. These layers also exhibited strong room temperature stimulated emission under high intensity pulsed optical pumping. Based on these GaN epilayer, AlGaN/GaN multiple quantum wells have been grown on the freestanding M-plane GaN. Photoluminescence data confirm that built-in electric field for M-plane structures is very weak, and this situation results in a stronger PL intensity in comparison with C-plane multiple quantum wells in tests at low excitation level.

Investigations of the structural stability of highly strained [(Al)GaIn]As/Ga (PAs) multiple quantum wells

1996 ◽  
Vol 69 (15) ◽  
pp. 2249-2251 ◽  
Author(s):  
T. Marschner ◽  
S. Lutgen ◽  
M. Volk ◽  
W. Stolz ◽  
E. O. Göbel
Keyword(s):  
Quantum Wells ◽  
Structural Stability ◽  
Multiple Quantum Wells ◽  
Multiple Quantum ◽  
Highly Strained
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