Influence of growth conditions on Al-Ga interdiffusion in low-temperature grown AlGaAs/GaAs multiple quantum wells

1997 ◽  
Vol 71 (12) ◽  
pp. 1676-1678 ◽  
Author(s):  
W. Feng ◽  
F. Chen ◽  
W. Q. Cheng ◽  
Q. Huang ◽  
J. M. Zhou
2013 ◽  
Vol 25 (6) ◽  
pp. 1523-1526
Author(s):  
万文坚 Wan Wenjian ◽  
尹嵘 Yin Rong ◽  
韩英军 Han Yingjun ◽  
王丰 Wang Feng ◽  
郭旭光 Guo Xuguang ◽  
...  

CrystEngComm ◽  
2020 ◽  
Author(s):  
Yuanhao Sun ◽  
Fujun Xu ◽  
Na Zhang ◽  
Jing Lang ◽  
Jiaming Wang ◽  
...  

Growth of AlGaN-based multiple quantum wells (MQWs) has been attempted on nano-patterned sapphire substrates (NPSSs). By adopting a critical-temperature approach and optimizing the growth conditions of V/III ratio and Si...


2017 ◽  
Author(s):  
M. Biswas ◽  
A. Balgarkashi ◽  
S. Singh ◽  
N. Shinde ◽  
R. L. Makkar ◽  
...  

1994 ◽  
Vol 65 (18) ◽  
pp. 2311-2313 ◽  
Author(s):  
A. D. Smith ◽  
A. T. R. Briggs ◽  
K. Scarrott ◽  
Xiao Zhou ◽  
U. Bangert

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