scholarly journals Influence of the high voltage pulse shape on the plasma source ion implantation process

1994 ◽  
Vol 65 (18) ◽  
pp. 2272-2274 ◽  
Author(s):  
R. R. Speth ◽  
G. A. Emmert ◽  
M. J. Goeckner
2010 ◽  
Vol 81 (12) ◽  
pp. 124703 ◽  
Author(s):  
M. C. Salvadori ◽  
F. S. Teixeira ◽  
W. W. R. Araújo ◽  
L. G. Sgubin ◽  
N. S. Sochugov ◽  
...  

1989 ◽  
Vol 39-40 ◽  
pp. 587-594 ◽  
Author(s):  
M. Madapura ◽  
J.R. Conrad ◽  
F.J. Worzala ◽  
R.A. Dodd ◽  
F.C. Prenger ◽  
...  

2007 ◽  
Vol 46 (No. 35) ◽  
pp. L858-L860 ◽  
Author(s):  
Nicolas Holtzer ◽  
Hideo Sugai ◽  
Takao Saito ◽  
Eugen Stamate

2000 ◽  
Vol 647 ◽  
Author(s):  
S. Miyagawa ◽  
Y. Miyagawa

AbstractPlasma based ion implantation (PBII) with bipolar high voltage pulses has been proposed to improve a dose uniformity in an ion implantation on a three-dimensional target. A pulsed glow discharge plasma is produced around the target by a positive high-voltage pulse, and then ions are implanted into the target from all sides by the subsequent negative high-voltage pulse. A time resolved plasma density and the spatial profiles of the pulsed glow discharge plasma are measured by a Langmuir probe in a boxcar mode, and diamond like carbon (DLC) films are deposited under optimal conditions of the pulsed plasma. It is shown that the PBII with bipolar pulses is a useful method in depositing DLC films on the three-dimensional target. A carbon ion implantation procedure results in the enhanced adherence of DLC coating to the target, and the enhanced adhesion is due to a graded carbon interface produced by carbon implantation.


2010 ◽  
Vol 38 (11) ◽  
pp. 3083-3088 ◽  
Author(s):  
Zongtao Zhu ◽  
Chunzhi Gong ◽  
Zhijian Wang ◽  
Xiubo Tian ◽  
Yi Li ◽  
...  

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