Visible luminescence from silicon by hydrogen implantation and annealing treatments

1994 ◽  
Vol 65 (4) ◽  
pp. 454-456 ◽  
Author(s):  
L. Pavesi ◽  
G. Giebel ◽  
R. Tonini ◽  
F. Corni ◽  
C. Nobili ◽  
...  
Keyword(s):  
Visible Luminescence ◽  
Hydrogen Implantation

Dechannealing Study of Nanocrystalline Si:H Layers Produced by High Dose Hydrogen Irradiation of Silicon Crystals

1998 ◽  
Vol 536 ◽  
Author(s):  
V. P. Popov ◽  
A. K. Gutakovsky ◽  
I. V. Antonova ◽  
K. S. Zhuravlev ◽  
E. V. Spesivtsev ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Rutherford Backscattering Spectrometry ◽  
Nanocrystalline Structure ◽  
Structural Defects ◽  
High Dose ◽  
Silicon Crystals ◽  
Strong Energy ◽  
Transmission Electron ◽  
Hydrogen Implantation

AbstractA study of Si:H layers formed by high dose hydrogen implantation (up to 3x107cm-2) using pulsed beams with mean currents up 40 mA/cm2 was carried out in the present work. The Rutherford backscattering spectrometry (RBS), channeling of He ions, and transmission electron microscopy (TEM) were used to study the implanted silicon, and to identify the structural defects (a-Si islands and nanocrystallites). Implantation regimes used in this work lead to creation of the layers, which contain hydrogen concentrations higher than 15 at.% as well as the high defect concentrations. As a result, the nano- and microcavities that are created in the silicon fill with hydrogen. Annealing of this silicon removes the radiation defects and leads to a nanocrystalline structure of implanted layer. A strong energy dependence of dechanneling, connected with formation of quasi nanocrystallites, which have mutual small angle disorientation (<1.50), was found after moderate annealing in the range 200-500°C. The nanocrystalline regions are in the range of 2-4 nm were estimated on the basis of the suggested dechanneling model and transmission electron microscopy (TEM) measurements. Correlation between spectroscopic ellipsometry, visible photoluminescence, and sizes of nanocrystallites in hydrogenated nc-Si:H is observed.

Visible Luminescence of the InGaN/GaN Ultraviolet Light-emitting Diodes 365 nm

2017 ◽  
Vol 9 (5) ◽  
pp. 05031-1-05031-5 ◽  
Author(s):  
V. P. Veleschuk ◽  
◽  
A. I. Vlasenko ◽  
Z. K. Vlasenko ◽  
D. N. Khmil ◽  
...  
Keyword(s):  
Ultraviolet Light ◽  
Light Emitting Diodes ◽  
Light Emitting ◽  
Visible Luminescence ◽  
Ultraviolet Light Emitting Diodes

ChemInform Abstract: Spectroscopy and Dynamics of Re4+ Near-IR-to-Visible Luminescence Upconversion.

ChemInform ◽  
2010 ◽  
Vol 31 (1) ◽  
pp. no-no
Author(s):  
Daniel R. Gamelin ◽  
Hans U. Guedel
Keyword(s):  
Visible Luminescence ◽  
Near Ir

Low-energy hydrogen implantation for silicon Schottky barrier modification

Vacuum ◽  
1986 ◽  
Vol 36 (11-12) ◽  
pp. 917-920 ◽  
Author(s):  
S Ashok ◽  
SA Ringel
Keyword(s):  
Schottky Barrier ◽  
Low Energy ◽  
Hydrogen Implantation

Visible luminescence from highly textured Tb 3+ doped RF sputtered zinc oxide films

2017 ◽  
Vol 184 ◽  
pp. 273-286 ◽  
Author(s):  
R. Sreeja Sreedharan ◽  
R. Reshmi Krishnan ◽  
R. Jolly Bose ◽  
V.S. Kavitha ◽  
S. Suresh ◽  
...  
Keyword(s):  
Zinc Oxide ◽  
Oxide Films ◽  
Zinc Oxide Films ◽  
Visible Luminescence

scholarly journals VUV-UV-visible luminescence of Nd3+, Er3+ and Tm3+ in LiLuF4 single crystal host

2010 ◽  
Vol 45 (3-6) ◽  
pp. 403-405 ◽  
Author(s):  
J. Martincik ◽  
M. Nikl ◽  
S. Ishizu ◽  
K. Fukuda ◽  
T. Suyama ◽  
...  
Keyword(s):  
Single Crystal ◽  
Visible Luminescence ◽  
Uv Visible

Boron neutralization and hydrogen diffusion in silicon subjected to low-energy hydrogen implantation

1989 ◽  
Vol 48 (1) ◽  
pp. 31-40 ◽  
Author(s):  
T. Zundel ◽  
A. Mesli ◽  
J. C. Muller ◽  
P. Siffert
Keyword(s):  
Hydrogen Diffusion ◽  
Low Energy ◽  
Hydrogen Implantation

Smart‐Cut® : The Basic Fabrication Process for Unibond® Soi Wafers

1996 ◽  
Vol 446 ◽  
Author(s):  
A.J. Auberton‐Hervé ◽  
T. Barge ◽  
F. Metral ◽  
M. Bruel ◽  
B. Aspar ◽  
...  
Keyword(s):  
Wafer Bonding ◽  
Low Cost ◽  
Bulk Silicon ◽  
High Quality ◽  
Thin Film Thickness ◽  
Hydrogen Implantation ◽  
Electric Behavior ◽  
Bonding Technology ◽  
Good Uniformity ◽  
Quality Surface

AbstractThe advantage of SOI wafers for device manufacture has been widely studied. To be a real challenger to bulk silicon, SOI producers have to offer SOI wafers in large volume and at low cost. The new Smart‐Cut® SOI process used for the manufacture of the Unibond® SOI wafers answers most of the SOI wafer manufacturability issues. The use of Hydrogen implantation and wafer bonding technology is the best combination to get good uniformity and high quality for both the SOI and buried oxide layer. In this paper, the Smart‐Cut® process is described in detail and material characteristics of Unibond® wafers such as crystalline quality, surface roughness, thin film thickness homogeneity, and electric behavior.

Hydrogen implantation-induced defects in bulk Si studied by Raman spectrometry

2006 ◽  
Vol 253 (1-2) ◽  
pp. 182-186 ◽  
Author(s):  
C. Villeneuve ◽  
V. Paillard ◽  
K.K. Bourdelle ◽  
I. Cayrefourcq ◽  
A. Boussagol ◽  
...  
Keyword(s):  
Raman Spectrometry ◽  
Hydrogen Implantation ◽  
Induced Defects
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