Hydrogen implantation-induced defects in bulk Si studied by Raman spectrometry

2006 ◽  
Vol 253 (1-2) ◽  
pp. 182-186 ◽  
Author(s):  
C. Villeneuve ◽  
V. Paillard ◽  
K.K. Bourdelle ◽  
I. Cayrefourcq ◽  
A. Boussagol ◽  
...  
Keyword(s):  
Raman Spectrometry ◽  
Hydrogen Implantation ◽  
Induced Defects

Impact of Hydrogen Implantation on Helium Implantation Induced Defects

2005 ◽  
Vol 108-109 ◽  
pp. 309-314 ◽  
Author(s):  
G. Gaudin ◽  
Frédéric Cayrel ◽  
Corrado Bongiorno ◽  
Robert Jérisian ◽  
Vito Raineri ◽  
...  
Keyword(s):  
Cavity Growth ◽  
High Dose ◽  
Defect Band ◽  
Hydrogen Addition ◽  
Recent Developments ◽  
Hydrogen Implantation ◽  
Helium Implantation ◽  
Silicon Based ◽  
Induced Defects ◽  
The Impact

Silicon-based power device performances are largely affected by metal contamination occurring during device manufacturing. Among the usual gettering techniques, recent developments were done on high dose helium implantation. Even though the gettering efficiency of this technique has been demonstrated in device application, the required doses are still extremely high for an industrial application. Recently, it has been shown that the use of H/He co-implantation limits the total requested doses [1]. In this paper, co-implantation of H/He, which has been already used to reduce the dose in the smart-cut® process is explored. The goal of this work is to decrease efficiently the implanted dose maintaining an efficient metallic gettering without degrading the Si surface. The impact of H implantation on He implantation induced defects is carefully studied. The TEM observations have evidenced that hydrogen addition drastically modified the defect band structure and promotes the cavity growth.. Additionally, we demonstrate that an efficient gettering can be obtained.

Electrically active hydrogen-implantation-induced defects in Ge crystals and SiGe alloys

2008 ◽  
Vol 517 (1) ◽  
pp. 419-421 ◽  
Author(s):  
V.P. Markevich ◽  
L. Dobaczewski ◽  
K. Bonde Nielsen ◽  
V.V. Litvinov ◽  
A.N. Petukh ◽  
...  
Keyword(s):  
Active Hydrogen ◽  
Hydrogen Implantation ◽  
Induced Defects

Partial annealing of defects in boron-implanted p-type silicon by hydrogen implantation

2002 ◽  
Vol 719 ◽  
Author(s):  
Yutaka Tokuda ◽  
Hiroyuki Iwata
Keyword(s):  
Point Defects ◽  
Deep Level Transient Spectroscopy ◽  
Deep Level ◽  
Type Silicon ◽  
Boron Implantation ◽  
Hydrogen Implantation ◽  
Transient Spectroscopy ◽  
P Type ◽  
Induced Defects ◽  
Partial Annealing

AbstractHydrogen implantation has been used to anneal defects produced in p-type silicon by boron implantation. Boron implantation is performed with an energy of 300 keV to a dose of 1×109 cm-2. Deep level transient spectroscopy measurements show the production of four hole traps (Ev + 0.21, 0.35, 0.50, 0.55 eV) by boron implantation. Subsequent hydrogen implantation is performed with energies of 60, 90, 120 and 150 keV to a dose of 2×1010 cm-2. Among four traps produced by boron implantation, the most significant effect of hydrogen implantation is observed on one trap (Ev + 0.50 eV). A 62% decrease in concentration is caused for this trap by hydrogen implantation with energies of 120 and 150 keV. This partial annealing is ascribed to the reaction of boron-implantation-induced defects with point defects produced by hydrogen implantation.

Diamond – Graphite Heterostructures Formed by Nitrogen and Hydrogen Implantation and Annealing

2011 ◽  
Vol 276 ◽  
pp. 27-33 ◽  
Author(s):  
V.P. Popov ◽  
L.N. Safronov ◽  
O.V. Naumova ◽  
D.V. Nikolaev ◽  
Yury Nikolaevich Palyvanov ◽  
...  
Keyword(s):  
Surface Defects ◽  
Molecular Ions ◽  
High Dose ◽  
Power Devices ◽  
Single Electron Transistors ◽  
Critical Dose ◽  
Hydrogen Implantation ◽  
New Generation ◽  
Induced Defects ◽  
Electron Transistors

Graphitic-diamond heterostructure may be very helpful not only for high frequency or power devices but also for new generation of electronic devices like single electron transistors or quantum computers operated at room temperature. The goal of our work was a formation of nanothin amorphous carbon or graphite layers with sp3 or sp2 hybridization inside the nitrogen doped synthetic monocristalline diamond by high dose hydrogen implantation. It was found that there is a “critical” dose of 50 keV hydrogen molecular ions equal to 4x1016 cm-2 above which an irreversible drop of the sheet resistivity in implanted layer occurs after annealing above 1000 oC. The nature of this conductivity was investigated and it was shown that variable range hopping mechanism of 3D conductivity dominates in investigated temperature interval. Four times higher value for the onset of this conductivity in comparison with “critical” dose for graphitization is explained by interaction of implantation induced defects with nitrogen atoms and surface defects.

Impact of Hydrogen Implantation on Helium Implantation Induced Defects

2005 ◽  
pp. 309-314
Author(s):  
G. Gaudin ◽  
Frédéric Cayrel ◽  
Corrado Bongiorno ◽  
Robert Jérisian ◽  
Vito Raineri ◽  
...  
Keyword(s):  
Hydrogen Implantation ◽  
Helium Implantation ◽  
Induced Defects

Quantitative defect studies in semiconductor TEM samples prepared by low angle ion milling

1995 ◽  
Vol 53 ◽  
pp. 512-513
Author(s):  
L. Mulestagno ◽  
J.C. Holzer ◽  
P. Fraundorf
Keyword(s):  
Sample Preparation ◽  
Milling Time ◽  
High Density ◽  
Low Density ◽  
Ion Milling ◽  
High Quality ◽  
Variable Angle ◽  
Major Disadvantage ◽  
Induced Defects

Due to the wealth of information, both analytical and structural that can be obtained from it TEM always has been a favorite tool for the analysis of process-induced defects in semiconductor wafers. The only major disadvantage has always been, that the volume under study in the TEM is relatively small, making it difficult to locate low density defects, and sample preparation is a somewhat lengthy procedure. This problem has been somewhat alleviated by the availability of efficient low angle milling.Using a PIPS® variable angle ion -mill, manufactured by Gatan, we have been consistently obtaining planar specimens with a high quality thin area in excess of 5 × 104 μm2 in about half an hour (milling time), which has made it possible to locate defects at lower densities, or, for defects of relatively high density, obtain information which is statistically more significant (table 1).

Xenon ion irradiation of superconducting YBa2Cu3O7 thin films

1990 ◽  
Vol 48 (4) ◽  
pp. 92-93
Author(s):  
H. Watanabe ◽  
B. Kabius ◽  
B. Roas ◽  
K. Urban
Keyword(s):  
Defect Formation ◽  
Ion Irradiation ◽  
High Resolution Electron Microscopy ◽  
Structural Disorder ◽  
Flux Lines ◽  
Pinning Effect ◽  
Magnetic Flux Lines ◽  
Resolution Electron ◽  
Radiation Induced ◽  
Induced Defects

Recently it was reported that the critical current density(Jc) of YBa2Cu2O7, in the presence of magnetic field, is enhanced by ion irradiation. The enhancement is thought to be due to the pinning of the magnetic flux lines by radiation-induced defects or by structural disorder. The aim of the present study was to understand the fundamental mechanisms of the defect formation in association with the pinning effect in YBa2Cu3O7 by means of high-resolution electron microscopy(HRTEM).The YBa2Cu3O7 specimens were prepared by laser ablation in an insitu process. During deposition, a substrate temperature and oxygen atmosphere were kept at about 1073 K and 0.4 mbar, respectively. In this way high quality epitaxially films can be obtained with the caxis parallel to the <100 > SrTiO3 substrate normal. The specimens were irradiated at a temperature of 77 K with 173 MeV Xe ions up to a dose of 3.0 × 1016 m−2.

EXAFS STUDY ON RADIATION INDUCED DEFECTS

1986 ◽  
Vol 47 (C8) ◽  
pp. C8-1045-C8-1048
Author(s):  
T. BOLZE ◽  
J. PEISL
Keyword(s):  
Radiation Induced ◽  
Exafs Study ◽  
Induced Defects
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