Improved performance of large‐area InP/InGaAs metal‐semiconductor‐metal photodetectors by sulfur passivation

1994 ◽  
Vol 64 (11) ◽  
pp. 1389-1391 ◽  
Author(s):  
U. Schade ◽  
St. Kollakowski ◽  
E. H. Böttcher ◽  
D. Bimberg
Keyword(s):  
Large Area ◽  
Metal Semiconductor Metal ◽  
Sulfur Passivation ◽  
Improved Performance

Area-scaling of Organic Solar Cells and Integrated Modules

2009 ◽  
Vol 1212 ◽  
Author(s):  
Seungkeun Choi ◽  
William J Potscavage ◽  
Bernard Kippelen
Keyword(s):  
Solar Cells ◽  
Current Density ◽  
Tin Oxide ◽  
Organic Solar Cells ◽  
Indium Tin Oxide ◽  
Series Resistance ◽  
Large Area ◽  
In Series ◽  
Improved Performance ◽  
Number Of Cells

AbstractWe report on the improved performance of large-area organic solar cells and modules by integrating metal grids directly with the indium tin oxide (ITO), thereby reducing the series resistance contribution from the ITO. Devices with different areas (0.1, 7, and 36.4 cm2) were prepared to study the area-dependency of the organic solar cells based on pentacene and C60 heterojunctions. Modules were prepared in which four individual cells (7 cm2) were connected in series and parallel. For the series connected modules, VOC scales linearly with the number of cells while parallel connected modules exhibited multiplied current density as expected.

Large area, low voltage, transit time limited InGaAs metal semiconductor metal photodetectors

1992 ◽  
Vol 61 (18) ◽  
pp. 2222-2224 ◽  
Author(s):  
Stephen E. Ralph ◽  
M. C. Hargis ◽  
G. D. Pettit
Keyword(s):  
Transit Time ◽  
Low Voltage ◽  
Large Area ◽  
Metal Semiconductor Metal

Intermediate temperature molecular beam‐epitaxy growth for design of large‐area metal‐semiconductor‐metal photodetectors

1994 ◽  
Vol 64 (23) ◽  
pp. 3151-3153 ◽  
Author(s):  
Bahram Nabet ◽  
Arthur Paolella ◽  
Paul Cooke ◽  
Mary L. Lemuene ◽  
Robert P. Moerkirk ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Intermediate Temperature ◽  
Molecular Beam Epitaxy Growth ◽  
Large Area ◽  
Metal Semiconductor Metal

Sulfur Passivation of InP/InGaAs Metal‐Semiconductor‐Metal Photodetectors

1999 ◽  
Vol 146 (5) ◽  
pp. 1946-1951 ◽  
Author(s):  
Z. Pang ◽  
K. C. Song ◽  
P. Mascher ◽  
J. G. Simmons
Keyword(s):  
Metal Semiconductor Metal ◽  
Sulfur Passivation
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