Large area, low voltage, transit time limited InGaAs metal semiconductor metal photodetectors

1992 ◽  
Vol 61 (18) ◽  
pp. 2222-2224 ◽  
Author(s):  
Stephen E. Ralph ◽  
M. C. Hargis ◽  
G. D. Pettit
Keyword(s):  
Transit Time ◽  
Low Voltage ◽  
Large Area ◽  
Metal Semiconductor Metal

scholarly journals All-Organic, Low Voltage, Transparent and Compliant Organic Field-Effect Transistor Fabricated by Means of Large-Area, Cost-Effective Techniques

2020 ◽  
Vol 10 (19) ◽  
pp. 6656
Author(s):  
Stefano Lai ◽  
Giulia Casula ◽  
Pier Carlo Ricci ◽  
Piero Cosseddu ◽  
Annalisa Bonfiglio
Keyword(s):  
Field Effect ◽  
Low Voltage ◽  
Field Effect Transistors ◽  
High Mobility ◽  
Chemical Vapor ◽  
Cost Effective ◽  
Large Area ◽  
Parylene C ◽  
Biomedical Sensing ◽  
Novel Applications

The development of electronic devices with enhanced properties of transparency and conformability is of high interest for the development of novel applications in the field of bioelectronics and biomedical sensing. Here, a fabrication process for all organic Organic Field-Effect Transistors (OFETs) by means of large-area, cost-effective techniques such as inkjet printing and chemical vapor deposition is reported. The fabricated device can operate at low voltages (as high as 4 V) with ideal electronic characteristics, including low threshold voltage, relatively high mobility and low subthreshold voltages. The employment of organic materials such as Parylene C, PEDOT:PSS and 6,13-Bis(triisopropylsilylethynyl)pentacene (TIPS pentacene) helps to obtain highly transparent transistors, with a relative transmittance exceeding 80%. Interestingly enough, the proposed process can be reliably employed for OFET fabrication over different kind of substrates, ranging from transparent, flexible but relatively thick polyethylene terephthalate (PET) substrates to transparent, 700-nm-thick, compliant Parylene C films. OFETs fabricated on such sub-micrometrical substrates maintain their functionality after being transferred onto complex surfaces, such as human skin and wearable items. To this aim, the electrical and electromechanical stability of proposed devices will be discussed.

Low Inductance Antenna (LIA) plasma source and plasma-enhanced dual rotatable magnetron sputter assisted with LIA

2015 ◽  
Vol 2015 (1) ◽  
pp. 000757-000760
Author(s):  
Y. Takaya ◽  
Y. Tanioka ◽  
H. Yoshino ◽  
A. Osawa
Keyword(s):  
Inductively Coupled Plasma ◽  
Low Voltage ◽  
Polymer Surface ◽  
Plasma Source ◽  
Large Area ◽  
Plasma Damage ◽  
Inductively Coupled ◽  
Temperature Deposition ◽  
Magnetron Sputter ◽  
Plasma Profile

In recent years, both low plasma damage and low temperature deposition technic for polymer substrates (e.g. PCB, films and etc.) are often required. We have developed a plasma enhanced dual rotatable magnetron sputter source assisted with inductively coupled plasma (ICP) using low inductance antenna (LIA). LIA has same unique characteristics, a)low voltage high density plasma, b)well controllability of plasma profile to ensure uniformity over large area, c)ionization of sputtered particle and etc. when in being used as a plasma assistant, and besides, LIA can be used as a ICP source for polymer surface modification. We introduce a variety of the possibilities of whether this sputter source is usable for the process of the fabrication of PCB.

scholarly journals Correction: Solution-processable, niobium-doped titanium oxide nanorods for application in low-voltage, large-area electronic devices

2018 ◽  
Vol 6 (10) ◽  
pp. 2604-2604
Author(s):  
F. A. Alharthi ◽  
F. Cheng ◽  
E. Verrelli ◽  
N. T. Kemp ◽  
A. F. Lee ◽  
...  
Keyword(s):  
Titanium Oxide ◽  
Low Voltage ◽  
Electronic Devices ◽  
Large Area ◽  
Oxide Nanorods ◽  
Niobium Doped ◽  
Solution Processable

Correction for ‘Solution-processable, niobium-doped titanium oxide nanorods for application in low-voltage, large-area electronic devices’ by F. A. Alharthi et al., J. Mater. Chem. C, 2018, 6, 1038–1047.

Simplified All‐Solid‐State WO 3 Based Electrochromic Devices on Single Substrate: Toward Large Area, Low Voltage, High Contrast, and Fast Switching Dynamics

2020 ◽  
Vol 7 (3) ◽  
pp. 1901663 ◽  
Author(s):  
Pierluigi Cossari ◽  
Marco Pugliese ◽  
Cataldo Simari ◽  
Alessio Mezzi ◽  
Vincenzo Maiorano ◽  
...  
Keyword(s):  
Solid State ◽  
Low Voltage ◽  
High Contrast ◽  
Electrochromic Devices ◽  
Large Area ◽  
Fast Switching ◽  
Single Substrate ◽  
Switching Dynamics

Improved performance of large‐area InP/InGaAs metal‐semiconductor‐metal photodetectors by sulfur passivation

1994 ◽  
Vol 64 (11) ◽  
pp. 1389-1391 ◽  
Author(s):  
U. Schade ◽  
St. Kollakowski ◽  
E. H. Böttcher ◽  
D. Bimberg
Keyword(s):  
Large Area ◽  
Metal Semiconductor Metal ◽  
Sulfur Passivation ◽  
Improved Performance

Intermediate temperature molecular beam‐epitaxy growth for design of large‐area metal‐semiconductor‐metal photodetectors

1994 ◽  
Vol 64 (23) ◽  
pp. 3151-3153 ◽  
Author(s):  
Bahram Nabet ◽  
Arthur Paolella ◽  
Paul Cooke ◽  
Mary L. Lemuene ◽  
Robert P. Moerkirk ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Intermediate Temperature ◽  
Molecular Beam Epitaxy Growth ◽  
Large Area ◽  
Metal Semiconductor Metal
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