Thin Film Formation of Perovskite Type Dielectric and Ferroelectric Materials(MTiO3,M=Ca,Sr,Ba and Pb) by Pulsed Laser Deposition

1994 ◽  
Vol 361 ◽  
Author(s):  
Hitoshi Tabata ◽  
Hidekazu Tanaka ◽  
Tomoji Kawai
Keyword(s):  
Pulsed Laser Deposition ◽  
Single Crystals ◽  
Remanent Polarization ◽  
Film Formation ◽  
Pulsed Laser ◽  
Dielectric Materials ◽  
Ferroelectric Materials ◽  
Laser Deposition ◽  
Axis Orientation ◽  
Perovskite Type

ABSTRACTWe have formed thin films of ferroelectric and dielectric materials (BaTiO3, SrTiO3 and CaTiO3) by pulsed laser deposition on various kinds of substrates such as SrTiO3, LaAlO3 and MgO(100) single crystals. All the films can be formed epitaxially on the SrTiO3 substrate with c-axis orientation by choosing suitable conditions. The electrical behavior of these films such as dielectric constant and spontaneous polarization is quite similar to that of single crystals in bulk samples. The remanent polarization of BaTiO3 and PbTiO3 films are about 15 μC/cm2 and 80 μC/cm2, respectively. The value of 80 μC/cm2 is almost the same as that theoretically predicted and have not been obtain in the bulk samples. The unique advantage of the pulsed laser deposition technique is its ability to produce highly oriented stoichiometric films that show good electrical properties.

Electrical Properties of ZnO Thin Films Deposited by Pulsed Laser Deposition.

2004 ◽  
Vol 829 ◽  
Author(s):  
S. P. Heluani ◽  
G. Simonelli ◽  
M. Villafuerte ◽  
G. Juarez ◽  
A. Tirpak ◽  
...  
Keyword(s):  
Thin Films ◽  
Pulsed Laser Deposition ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Zno Thin Films ◽  
Axis Orientation ◽  
Si Substrates ◽  
N2 Atmosphere ◽  
Doping Effects ◽  
High O2

ABSTRACTStructural and electronic transport properties of polycrystalline ZnO thin films, prepared by pulsed laser deposition, have been investigated. The films were deposited on glass and Si3N4/Si substrates using O2 and N2 atmospheres. X-ray analysis revealed preferential c-axis orientation perpendicular to the sample substrate. Films deposited under relatively high O2 pressure were highly resistive. However, the conductivity σ increased while the films were irradiated with ultraviolet light, showing an Arrhenius (In σ ∝ T-1) dependence as a function of temperature. The ZnO film deposited in N2 atmosphere exhibited at room temperature a resistivity ∼ 1 Ω cm, and a sheet carrier concentration ∼ 5 1012 cm-2. The variation of the conductivity with temperature, in the range 60 – 150 K, follows a In σ ∝ T-1/4 dependence characteristic of variable range hopping. An analysis of the experimental results of conductivity as a function of temperature, in terms of possible doping effects, as well as conduction mechanisms is presented.

scholarly journals Pulsed Laser Deposition of BaTiO3Thin Films on Different Substrates

2010 ◽  
Vol 2010 ◽  
pp. 1-5 ◽  
Author(s):  
Yaodong Yang ◽  
Zhiguang Wang ◽  
Jie-Fang Li ◽  
D. Viehland
Keyword(s):  
Thin Films ◽  
Pulsed Laser Deposition ◽  
Single Crystals ◽  
Ferroelectric Properties ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Material Systems ◽  
Different Types

We have studied the deposition of BaTiO3(BTO) thin films on various substrates. Three representative substrates were selected from different types of material systems: (i) SrTiO3single crystals as a typical oxide, (ii) Si wafers as a semiconductor, and (iii) Ni foils as a magnetostrictive metal. We have compared the ferroelectric properties of BTO thin films obtained by pulsed laser deposition on these diverse substrates.

Preparation and Electrical Property of Mg2Si Thin Film by Pulsed Laser Deposition

2014 ◽  
Vol 1058 ◽  
pp. 244-247 ◽  
Author(s):  
Mei Jun Yang
Keyword(s):  
Thin Film ◽  
Pulsed Laser Deposition ◽  
Film Formation ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Force Microscopy ◽  
Temperature Range ◽  
Type Semiconductor ◽  
Annealing Procedure ◽  
Si Thin Film

Mg2Si thin film on Si(100) substrate was obtained by pulsed laser deposition. Effects of the annealing procedure on the growth of Mg2Si film were discussed. X-ray, atomic force microscopy (AFM) and field-emission scanning electron microscopy (FESEM) were applied for the phase and microstructure of the obtained Mg2Si film. The results revealed that the annealing procedure was very important for the crystallization of Mg2Si thin film. The Ar partial pressure of 10Pa, temperature of 500°C and time of 30min for annealing were the optimal annealing parameters for Mg2Si thin film formation. Furthermore, electrical properties of the obtained Mg2Si thin film were detected. The results showed that the maximal resistivity of Mg2Si thin film was 7Ω·cm within the temperature range of 110~230°C. And the resistivity gradually decreased with the increase of temperature, which was the characteristic behaviour of a semiconductor. Carrier concentration of the film was negative in the temperature range of testing, showing Mg2Si thin film as n-type semiconductor.

PbS Thin Film Formation on Terrace-Step Surface by Pulsed Laser Deposition

1998 ◽  
Vol 33 (5) ◽  
pp. 711-716 ◽  
Author(s):  
J Vaitkus ◽  
V Kazlauskiene ◽  
J Miskinis ◽  
J Sinius
Keyword(s):  
Thin Film ◽  
Pulsed Laser Deposition ◽  
Film Formation ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Thin Film Formation

Novel Materials Applications of Pulsed Laser Deposition

MRS Bulletin ◽  
1992 ◽  
Vol 17 (2) ◽  
pp. 44-53 ◽  
Author(s):  
Catherine M. Cotell ◽  
Kenneth S. Grabowski
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Pulsed Laser Deposition ◽  
Pulsed Laser ◽  
Ferroelectric Materials ◽  
Laser Deposition ◽  
Laser Target ◽  
Thin Film Fabrication ◽  
Superconducting Oxides ◽  
Multicomponent Oxides

The successful use of pulsed laser deposition (PLD) to fabricate thin film superconductors has generated interest in using the technique to deposit thin films of other materials. The compositional fidelity between laser target and deposited film and the ability to deposit films in reactive gas environments make the PLD process particularly well suited to the deposition of complex multicomponent materials. Cheung and Sankur recently provided an excellent review of the PLD field, including a table of over 100 elements, inorganic and organic compounds, andsuperlattices that have been laser evaporated. Over 75 of these materials were deposited as thin films.The goal of this article is to provide an introduction to some of the newer applications of PLD for thin film fabrication. Four classes of materials are highlighted: ferroelectrics, bioceramics, ferrites, and tribological materials. Ferroelectric materials are structurally related to the high-temperature superconducting oxides and therefore are a direct extension of the recent superconducting oxide work. Bioceramics are dissimilar in structure and application to both ferroelectrics and superconducting oxides, but they are complex multicomponent oxides and, therefore, benefit from the use of PLD. Ferrites, also complex, multicomponent oxides, represent another exciting, but only lightly explored opportunity for PLD. In contrast, tribological materials are typically neither complex nor multicomponent. Nevertheless, interesting structures and properties have been produced by PLD. A few of the more important ones will be discussed. These different types of materials demonstrate the diversity of capabilities offered by PLD.

Studies on the growth of epitaxial bismuth-substituted iron garnet on gadolinium gallium garnet single crystals by pulsed laser deposition

2008 ◽  
Vol 310 (24) ◽  
pp. 5392-5401 ◽  
Author(s):  
Stephan Leitenmeier ◽  
Timo Körner ◽  
Josef Griesbauer ◽  
Michael Herbort ◽  
Andreas Heinrich ◽  
...  
Keyword(s):  
Pulsed Laser Deposition ◽  
Single Crystals ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Gadolinium Gallium Garnet ◽  
Iron Garnet
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