New method to improve thermal stability in the interface of silicon and tungsten by the interposition of plasma deposited tungsten nitride thin film

1994 ◽  
Vol 64 (5) ◽  
pp. 619-621 ◽  
Author(s):  
Chang Woo Lee ◽  
Yong Tae Kim ◽  
Jeong Yong Lee
1993 ◽  
Vol 318 ◽  
Author(s):  
Chang Woo Lee ◽  
Yong Tae Kim ◽  
Suk-Ki Min ◽  
Choochon Lee ◽  
Jeong Yong Lee ◽  
...  

ABSTRACTPlasma enhanced chemical vapor deposited tungsten nitride (PECVD-W67N33) thin film has been proposed as a diffusion barrier. The resistivity and lattice constant of PECVD-W67N33 are 110-28 μΩ-cm and 4.134 Å, respectively and this film has compressive stress of 2.6 × 1010 dyne/cm2. Thermal stability of PECVD-W67N33 as a diffusion barrier reveals that the interdiffusions between Al or W and Si substrate can be prevented by N interstitial atoms in fcc-W2N grains and grain boundaries.


2011 ◽  
Vol 20 (6) ◽  
pp. 067303 ◽  
Author(s):  
Fang Liu ◽  
Zhi-Xin Qin ◽  
Fu-Jun Xu ◽  
Sheng Zhao ◽  
Xiang-Ning Kang ◽  
...  

2006 ◽  
Vol 352 (9-20) ◽  
pp. 955-958 ◽  
Author(s):  
S. Honda ◽  
A. Fejfar ◽  
J. Kočka ◽  
T. Yamazaki ◽  
A. Ogane ◽  
...  

1991 ◽  
Vol 36 (5-6) ◽  
pp. 763-771 ◽  
Author(s):  
B.J. Seddon ◽  
M.J. Eddowes ◽  
A. Firth ◽  
A.E. Owen ◽  
H.H.J. Girault

1997 ◽  
Author(s):  
YongTae Kim ◽  
Dong J. Kim ◽  
Chang W. Lee ◽  
Jong-Wan Park

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