Thermal Stability of The Chromium, Iron, and Tungsten Borides In Streaming Ammonia And The Existence of a New Tungsten Nitride

JOM ◽  
1951 ◽  
Vol 3 (8) ◽  
pp. 639-642 ◽  
Author(s):  
R. Kiessling ◽  
Y. H. Liu
Keyword(s):  
Thermal Stability ◽  
Tungsten Nitride ◽  
Tungsten Borides ◽  
Thermal Stability Of ◽  
And Tungsten

Thermal stability of tungsten and tungsten nitride Schottky contacts to AlGaN/GaN

2011 ◽  
Vol 20 (6) ◽  
pp. 067303 ◽  
Author(s):  
Fang Liu ◽  
Zhi-Xin Qin ◽  
Fu-Jun Xu ◽  
Sheng Zhao ◽  
Xiang-Ning Kang ◽  
...  
Keyword(s):  
Thermal Stability ◽  
Schottky Contacts ◽  
Tungsten Nitride ◽  
Thermal Stability Of ◽  
And Tungsten

TEM Studies of Plasma Deposited Tungsten and Tungsten Nitride Barriers for Thermally Stable Metallization

1993 ◽  
Vol 318 ◽  
Author(s):  
Chang Woo Lee ◽  
Yong Tae Kim ◽  
Suk-Ki Min ◽  
Choochon Lee ◽  
Jeong Yong Lee ◽  
...  
Keyword(s):  
Thin Film ◽  
Thermal Stability ◽  
Compressive Stress ◽  
Lattice Constant ◽  
Diffusion Barrier ◽  
Chemical Vapor ◽  
Tungsten Nitride ◽  
Si Substrate ◽  
Chemical Vapor Deposited ◽  
Thermal Stability Of

ABSTRACTPlasma enhanced chemical vapor deposited tungsten nitride (PECVD-W67N33) thin film has been proposed as a diffusion barrier. The resistivity and lattice constant of PECVD-W67N33 are 110-28 μΩ-cm and 4.134 Å, respectively and this film has compressive stress of 2.6 × 1010 dyne/cm2. Thermal stability of PECVD-W67N33 as a diffusion barrier reveals that the interdiffusions between Al or W and Si substrate can be prevented by N interstitial atoms in fcc-W2N grains and grain boundaries.

Thermal stability of amorphous tungsten/tungsten nitride synthesis using HFCVD as a diffusion barrier for copper

2016 ◽  
Vol 122 (5) ◽  
Author(s):  
Somayeh Asgary ◽  
Mohammad Reza Hantehzadeh ◽  
Mahmood Ghoranneviss ◽  
Arash Boochani
Keyword(s):  
Thermal Stability ◽  
Diffusion Barrier ◽  
Tungsten Nitride ◽  
Thermal Stability Of

The Ordered Phase Formation in Ti-Al-Ga Alloys

1970 ◽  
Vol 28 ◽  
pp. 440-441
Author(s):  
Shiro Fujishiro ◽  
Harold L. Gegel
Keyword(s):  
Thermal Stability ◽  
High Temperature ◽  
Titanium Alloys ◽  
Growth Kinetics ◽  
Stoichiometric Composition ◽  
Good Potential ◽  
Alpha Titanium ◽  
Cold Rolled ◽  
Kinetics Of ◽  
Thermal Stability Of

Ordered-alpha titanium alloys having a DO19 type structure have good potential for high temperature (600°C) applications, due to the thermal stability of the ordered phase and the inherent resistance to recrystallization of these alloys. Five different Ti-Al-Ga alloys consisting of equal atomic percents of aluminum and gallium solute additions up to the stoichiometric composition, Ti3(Al, Ga), were used to study the growth kinetics of the ordered phase and the nature of its interface.The alloys were homogenized in the beta region in a vacuum of about 5×10-7 torr, furnace cooled; reheated in air to 50°C below the alpha transus for hot working. The alloys were subsequently acid cleaned, annealed in vacuo, and cold rolled to about. 050 inch prior to additional homogenization

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