High performance of Fe:InP/InGaAs metal/semiconductor/metal photodetectors grown by metalorganic vapor phase epitaxy

1990 ◽  
Vol 2 (1) ◽  
pp. 56-58 ◽  
Author(s):  
L. Yang ◽  
A.S. Sudbo ◽  
R.A. Logan ◽  
T. Tanbun-Ek ◽  
W.T. Tsang
Keyword(s):  
Vapor Phase ◽  
High Performance ◽  
Metalorganic Vapor Phase Epitaxy ◽  
Vapor Phase Epitaxy ◽  
Metal Semiconductor Metal

High performance InP/InGaAs heterostructure bipolar transistors grown by metalorganic vapor phase epitaxy

1989 ◽  
Vol 55 (2) ◽  
pp. 171-172 ◽  
Author(s):  
R. N. Nottenburg ◽  
Y. K. Chen ◽  
T. Tanbun‐Ek ◽  
R. A. Logan ◽  
D. A. Humphrey
Keyword(s):  
Vapor Phase ◽  
High Performance ◽  
Metalorganic Vapor Phase Epitaxy ◽  
Bipolar Transistors ◽  
Vapor Phase Epitaxy

High-performance distributed feedback quantum cascade lasers grown by metalorganic vapor phase epitaxy

2004 ◽  
Vol 85 (23) ◽  
pp. 5529-5531 ◽  
Author(s):  
R. P. Green ◽  
L. R. Wilson ◽  
E. A. Zibik ◽  
D. G. Revin ◽  
J. W. Cockburn ◽  
...  
Keyword(s):  
Vapor Phase ◽  
High Performance ◽  
Quantum Cascade Lasers ◽  
Metalorganic Vapor Phase Epitaxy ◽  
Vapor Phase Epitaxy ◽  
Distributed Feedback ◽  
Quantum Cascade ◽  
Cascade Lasers

Present Status of III-Nitride Based Photodetectors

2000 ◽  
Vol 622 ◽  
Author(s):  
Eva Monroy ◽  
Fernando Calle ◽  
José Luis Pau ◽  
Elías Muñoz ◽  
Franck Omnès ◽  
...  
Keyword(s):  
Vapor Phase ◽  
Present Status ◽  
Metalorganic Vapor Phase Epitaxy ◽  
Vapor Phase Epitaxy ◽  
Metal Semiconductor Metal

ABSTRACTThis paper describes the characteristics of a variety of AlGaN-based photodetectors (photoconductors, metal-semiconductor-metal photodiodes, Schottky photodiodes and p-i-n photodiodes), grown on sapphire by metalorganic vapor phase epitaxy. The features that determine their performance are analyzed. Results using other substrates (epitaxial lateral overgrown GaN, Si) are also presented.

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