scholarly journals Monte Carlo studies on the well‐width dependence of carrier capture time in graded‐index separate confinement heterostructure quantum well laser structures

1993 ◽  
Vol 63 (14) ◽  
pp. 1874-1876 ◽  
Author(s):  
Yeeloy Lam ◽  
Jasprit Singh
Keyword(s):  
Monte Carlo ◽  
Quantum Well ◽  
Carrier Capture ◽  
Graded Index ◽  
Quantum Well Laser ◽  
Capture Time ◽  
Monte Carlo Studies

Calculation of carrier capture time of a quantum well in graded-index separate-confinement heterostructures

1986 ◽  
Vol 34 (4) ◽  
pp. 2381-2384 ◽  
Author(s):  
J. A. Brum ◽  
T. Weil ◽  
J. Nagle ◽  
B. Vinter
Keyword(s):  
Quantum Well ◽  
Carrier Capture ◽  
Graded Index ◽  
Capture Time

Carrier capture time and its effect on the efficiency of quantum-well lasers

1994 ◽  
Vol 30 (1) ◽  
pp. 54-62 ◽  
Author(s):  
H. Hirayama ◽  
J. Yoshida ◽  
Y. Miyake ◽  
M. Asada
Keyword(s):  
Quantum Well ◽  
Quantum Well Lasers ◽  
Carrier Capture ◽  
Capture Time

1.5 µm GaInAs/AlGaInAs Graded-Index Separate-Confinement-Heterostructure Quantum Well Laser Diodes Grown by Organometallic Chemical Vapor Deposition

1992 ◽  
Vol 31 (Part 1, No. 5A) ◽  
pp. 1365-1371 ◽  
Author(s):  
Akihiko Kasukawa ◽  
Rajaram Bhat ◽  
Catherine Caneau ◽  
Nicholas C. Andreadakis ◽  
Bhadresh Pathak ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Quantum Well ◽  
Vapor Deposition ◽  
Laser Diodes ◽  
Chemical Vapor ◽  
Graded Index ◽  
Quantum Well Laser ◽  
Organometallic Chemical Vapor Deposition

Doping effects on carrier capture in a single quantum well by ensemble Monte Carlo

1996 ◽  
Vol 74 (S1) ◽  
pp. 220-224
Author(s):  
B. Reid ◽  
M. Abou-Khalil ◽  
R. Maciejko
Keyword(s):  
Monte Carlo ◽  
Quantum Well ◽  
Pulse Excitation ◽  
Single Quantum ◽  
Single Quantum Well ◽  
Carrier Capture ◽  
Ensemble Monte Carlo ◽  
Doping Effects ◽  
Long Time ◽  
Femtosecond Light Pulse

Using a bipolar ensemble Monte Carlo coupled with a Poisson equation solver, we simulate, for the first time, carrier capture with both types of carriers in an InGaAs/InP-doped single quantum well, following femtosecond light-pulse excitation. We show that Coulomb interaction between electrons and holes is very efficient in keeping the capture ambipolar for a long time. However, for short times, the capture is unipolar. Our results indicate that for these kinds of experiments, Monte Carlo simulations with only one type of carrier give questionable results.

Extremely low threshold current density InGaAs/GaAs/AIGaAs strained SQW laser grown by MBE with As2

1996 ◽  
Vol 74 (S1) ◽  
pp. 1-4 ◽  
Author(s):  
M. Dion ◽  
Z. R. Wasilewski ◽  
F. Chatenoud ◽  
V. K. Gupta ◽  
A. R. Pratt ◽  
...  
Keyword(s):  
Quantum Well ◽  
Current Density ◽  
Threshold Current ◽  
Threshold Current Density ◽  
Single Quantum Well ◽  
Graded Index ◽  
Quantum Well Laser ◽  
Gaas Barrier ◽  
Low Threshold ◽  
Cladding Layers

In this report, we present data on an InGaAs/GaAs strained single quantum well laser with the lowest reported threshold current density to date, namely 44 A cm−2 for a 3 mm cavity length. This was grown by solid-source molecular-beam epitaxy with the arsenic dimer, As2. The structure is that of a graded-index, separate-confinement heterostructure with a single strained InGaAs quantum well, sandwiched between GaAs barrier layers and AlGaAs cladding layers. The wavelength of the lasers was around 985 nm, and the internal efficiency and losses were 69% and 0.70 cm−1, respectively. In addition, data on the uniformity of our lasers, which are grown on rotating 2 in substrates (1 in = 2.54 cm), show drops in photoluminescence emission wavelength and layer thickness of less than 4 nm and 4%, respectively, from the centre to the edge of the wafer and very little compositional change.

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