New oxide phase with wide band gap and high electroconductivity, MgIn2O4

1992 ◽  
Vol 61 (16) ◽  
pp. 1954-1955 ◽  
Author(s):  
Naoyuki Ueda ◽  
Takahisa Omata ◽  
Naoko Hikuma ◽  
Kazushige Ueda ◽  
Hiroshi Mizoguchi ◽  
...  
Keyword(s):  
Band Gap ◽  
1993 ◽  
Vol 62 (5) ◽  
pp. 499-500 ◽  
Author(s):  
Takahisa Omata ◽  
Naoyuki Ueda ◽  
Naoko Hikuma ◽  
Kazushige Ueda ◽  
Hiroshi Mizoguchi ◽  
...  
Keyword(s):  
Band Gap ◽  

1993 ◽  
Vol 63 (24) ◽  
pp. 3335-3337 ◽  
Author(s):  
Kazuhiko Yanagawa ◽  
Yoshimichi Ohki ◽  
Naoyuki Ueda ◽  
Takahisa Omata ◽  
Takuya Hashimoto ◽  
...  

1994 ◽  
Vol 33 (Part 2, No. 2B) ◽  
pp. L238-L240 ◽  
Author(s):  
Kazuhiko Yanagawa ◽  
Yoshimichi Ohki ◽  
Takahisa Omata ◽  
Hideo Hosono ◽  
Naoyuki Ueda ◽  
...  

1992 ◽  
Vol 242 ◽  
Author(s):  
C.R. Aita ◽  
R.C. Lee ◽  
C.-K. Kwok ◽  
E.A. Kolawa

ABSTRACTReactive sputter deposition is a widely-used process for growing films of high melting point materials near room temperature and desirable metastable structures not attainable in material grown under conditions of thermodynamic equilibrium. Both categories include wide band-gap metal oxides. A first step towards reproducible growth is to develop a “phase map” for the metal-oxygen system of interest. The map graphically relates independent sputter deposition process parameters, the growth environment, and the metallurgical phase(s) formed in the film. This paper shows how phase maps are constructed and used to observe general trends in oxide phase formation sequence, with examples from the Nb-O, Y-O, and Zr-O systems.


Author(s):  
Joanna L. Batstone

Interest in II-VI semiconductors centres around optoelectronic device applications. The wide band gap II-VI semiconductors such as ZnS, ZnSe and ZnTe have been used in lasers and electroluminescent displays yielding room temperature blue luminescence. The narrow gap II-VI semiconductors such as CdTe and HgxCd1-x Te are currently used for infrared detectors, where the band gap can be varied continuously by changing the alloy composition x.Two major sources of precipitation can be identified in II-VI materials; (i) dopant introduction leading to local variations in concentration and subsequent precipitation and (ii) Te precipitation in ZnTe, CdTe and HgCdTe due to native point defects which arise from problems associated with stoichiometry control during crystal growth. Precipitation is observed in both bulk crystal growth and epitaxial growth and is frequently associated with segregation and precipitation at dislocations and grain boundaries. Precipitation has been observed using transmission electron microscopy (TEM) which is sensitive to local strain fields around inclusions.


Author(s):  
Raquel Caballero ◽  
Leonor de la Cueva ◽  
Andrea Ruiz-Perona ◽  
Yudenia Sánchez ◽  
Markus Neuschitzer ◽  
...  

2013 ◽  
Vol 28 (6) ◽  
pp. 671-676 ◽  
Author(s):  
Yu-Qing ZHANG ◽  
Li-Li ZHAO ◽  
Shi-Long XU ◽  
Chao ZHANG ◽  
Xiao-Ying CHEN ◽  
...  

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