Low‐energy oxygen ion bombardment effect on BaTiO3thin films grown by multi‐ion‐beam reactive sputtering technique

1993 ◽  
Vol 63 (6) ◽  
pp. 734-736 ◽  
Author(s):  
C.‐J. Peng ◽  
H. Hu ◽  
S. B. Krupanidhi
Keyword(s):  
Ion Beam ◽  
Ion Bombardment ◽  
Reactive Sputtering ◽  
Low Energy ◽  
Oxygen Ion

Suppression of self-organized surface nanopatterning on GaSb/InAs multilayers induced by low energy oxygen ion bombardment by using simultaneously sample rotation and oxygen flooding

2018 ◽  
Vol 441 ◽  
pp. 218-222 ◽  
Author(s):  
Georges Beainy ◽  
Tiphaine Cerba ◽  
Franck Bassani ◽  
Mickaël Martin ◽  
Thierry Baron ◽  
...  
Keyword(s):  
Ion Bombardment ◽  
Low Energy ◽  
Sample Rotation ◽  
Self Organized ◽  
Oxygen Ion

Formation of self-organized nano-surfaces on III–V semiconductors by low energy oxygen ion bombardment

2015 ◽  
Vol 37 ◽  
pp. 190-198 ◽  
Author(s):  
A.G. Hernández ◽  
Yu. Kudriavtsev ◽  
S. Gallardo ◽  
M. Avendaño ◽  
R. Asomoza
Keyword(s):  
Ion Bombardment ◽  
Low Energy ◽  
Self Organized ◽  
Oxygen Ion

Ion Beam Surface Modification for Achieving Rectification in Gold-Aluminum Nitride-Silicon Junctions

1993 ◽  
Vol 316 ◽  
Author(s):  
T. Stacy ◽  
B. Y. Liaw ◽  
A. H. Khan ◽  
G. Zhao ◽  
E. M. Charlson ◽  
...  
Keyword(s):  
Aluminum Nitride ◽  
Ion Beam ◽  
Single Crystal Silicon ◽  
Ion Bombardment ◽  
Low Energy ◽  
Silicon Substrates ◽  
Scanning Electron Micrographs ◽  
Electrical Measurements ◽  
Crystal Silicon ◽  
Beam Surface

ABSTRACTLow energy ion bombardment has been utilized to fabricate rectifying contacts on aluminum nitride grown on single crystal silicon substrates. Bombardment of aluminum nitride with methane was followed by sputter deposition of gold contacts. To our knowledge, this is the first report of rectifying contact formation on aluminum nitride. Scanning electron micrographs show that the initially ordered aluminum nitride surface is significantly altered with low energy methane ion beam exposure. Electrical measurements made on samples which had been partially masked during implantation indicate that rectification is a result of the ion bombardment.

Simulations of Low-Energy Ion Bombardment and Epitaxial Growth

1991 ◽  
Vol 236 ◽  
Author(s):  
E. Chason ◽  
P. Bedrossian ◽  
J.Y. Tsao ◽  
B.W. Dodson ◽  
S.T. Picraux
Keyword(s):  
Epitaxial Growth ◽  
Ion Beam ◽  
Ion Bombardment ◽  
High Energy ◽  
Low Energy ◽  
High Energy Electron ◽  
Preferential Sputtering ◽  
Surface Vacancy ◽  
Atomic Coordination ◽  
Primary Interaction

AbstractWe have performed computer simulations of epitaxial growth and low-energy ion bombardment for comparison with reflection high-energy electron diffraction (RHEED) mesurements. The simulations are based on a hybrid Monte Carlo/rate equation approach which includes the processes of defect creation (adatom and surface vacancy), surface diffusion, and attachment and detachment from steps and islands. In this work, we focus on simulating the experimental observations of ion-induced RHEED oscillations and cancellation of RHEED oscillations during simultaneous ion bombardment and growth. For the interaction of the low-energy ion with the surface, we consider two mechanisms: preferential sputtering (where the sputtering cross section depends on the atomic coordination) and mobile vacancies. Our results indicate that the primary interaction of the ion beam with the surface is probably through the creation of mobile vacancies, and that the degree of preferential sputtering is not large.

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