High-temperature characteristics of 1.3 μm InGaAsN:Sb/GaAs multiple-quantum-well lasers grown by molecular-beam epitaxy

X. Yang; J. B. Heroux; M. J. Jurkovic; W. I. Wang

doi:10.1063/1.125587

High-temperature characteristics of 1.3 μm InGaAsN:Sb/GaAs multiple-quantum-well lasers grown by molecular-beam epitaxy

Applied Physics Letters ◽

10.1063/1.125587 ◽

2000 ◽

Vol 76 (7) ◽

pp. 795-797 ◽

Cited By ~ 51

Author(s):

X. Yang ◽

J. B. Heroux ◽

M. J. Jurkovic ◽

W. I. Wang

Keyword(s):

High Temperature ◽

Molecular Beam Epitaxy ◽

Quantum Well ◽

Molecular Beam ◽

Multiple Quantum Well ◽

Quantum Well Lasers ◽

Multiple Quantum ◽

Temperature Characteristics

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Low‐threshold operation of AlGaAs/GaAs multiple quantum well lasers grown on Si substrates by molecular beam epitaxy

Applied Physics Letters ◽

10.1063/1.98481 ◽

1987 ◽

Vol 51 (4) ◽

pp. 221-223 ◽

Cited By ~ 20

Author(s):

Tow C. Chong ◽

Clifton G. Fonstad

Keyword(s):

Molecular Beam Epitaxy ◽

Quantum Well ◽

Molecular Beam ◽

Multiple Quantum Well ◽

Quantum Well Lasers ◽

Multiple Quantum ◽

Si Substrates ◽

Low Threshold

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Low‐threshold 1.3‐μm wavelength, InGaAsP strained‐layer multiple quantum well lasers grown by gas source molecular beam epitaxy

Applied Physics Letters ◽

10.1063/1.112192 ◽

1994 ◽

Vol 65 (7) ◽

pp. 892-894 ◽

Cited By ~ 7

Author(s):

Guang‐Jye Shiau ◽

Chih‐Ping Chao ◽

Paul E. Burrows ◽

Stephen R. Forrest

Keyword(s):

Molecular Beam Epitaxy ◽

Quantum Well ◽

Molecular Beam ◽

Multiple Quantum Well ◽

Quantum Well Lasers ◽

Multiple Quantum ◽

Strained Layer ◽

Gas Source ◽

Low Threshold

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Molecular-beam epitaxy of phosphor-free 1.3 μm InAlGaAs multiple-quantum-well lasers on InP (100)

Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena ◽

10.1116/1.2737434 ◽

2007 ◽

Vol 25 (3) ◽

pp. 1090 ◽

Cited By ~ 3

Author(s):

W. Li ◽

D. Moscicka ◽

A. Torfi ◽

W. I. Wang

Keyword(s):

Molecular Beam Epitaxy ◽

Quantum Well ◽

Molecular Beam ◽

Multiple Quantum Well ◽

Quantum Well Lasers ◽

Multiple Quantum

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High-performance long-wavelength InGaAs/GaAs multiple quantum-well lasers grown by molecular beam epitaxy

Electronics Letters ◽

10.1049/el:20070279 ◽

2007 ◽

Vol 43 (8) ◽

pp. 454 ◽

Cited By ~ 12

Author(s):

G. Adolfsson ◽

S.M. Wang ◽

M. Sadeghi ◽

A. Larsson

Keyword(s):

Molecular Beam Epitaxy ◽

Quantum Well ◽

High Performance ◽

Molecular Beam ◽

Multiple Quantum Well ◽

Quantum Well Lasers ◽

Multiple Quantum ◽

Long Wavelength

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Effects of carbon impurity on GaAs/AlGaAs multiple quantum well lasers grown by molecular beam epitaxy

1996 Conference on Optoelectronic and Microelectronic Materials and Devices. Proceedings ◽

10.1109/commad.1996.610065 ◽

2002 ◽

Author(s):

D.H. Zhang ◽

C.Y. Li ◽

S.F. Yoon

Keyword(s):

Molecular Beam Epitaxy ◽

Quantum Well ◽

Molecular Beam ◽

Multiple Quantum Well ◽

Quantum Well Lasers ◽

Multiple Quantum ◽

Carbon Impurity

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Metalorganic molecular-beam-epitaxy-grown In0.77Ga0.23As/InGaAs multiple quantum well lasers emitting at 2.07 μm wavelength

Applied Physics Letters ◽

10.1063/1.121561 ◽

1998 ◽

Vol 72 (24) ◽

pp. 3106-3108 ◽

Cited By ~ 26

Author(s):

Manabu Mitsuhara ◽

Matsuyuki Ogasawara ◽

Mamoru Oishi ◽

Hideo Sugiura

Keyword(s):

Molecular Beam Epitaxy ◽

Quantum Well ◽

Molecular Beam ◽

Multiple Quantum Well ◽

Quantum Well Lasers ◽

Multiple Quantum ◽

Metalorganic Molecular Beam Epitaxy

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Design considerations to improve high temperature characteristics of 1.3 μm AlGaInAs-InP uncooled multiple quantum well lasers: Strain in barriers

Optik ◽

10.1016/j.ijleo.2010.03.016 ◽

2011 ◽

Vol 122 (6) ◽

pp. 514-519

Author(s):

Vahid Bahrami Yekta ◽

Hassan Kaatuzian

Keyword(s):

High Temperature ◽

Quantum Well ◽

Multiple Quantum Well ◽

Quantum Well Lasers ◽

Multiple Quantum ◽

Temperature Characteristics ◽

Design Considerations

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Yellow (5735 Å) emission GaInP multiple quantum well lasers grown by gas source molecular-beam epitaxy

Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena ◽

10.1116/1.588157 ◽

1995 ◽

Vol 13 (2) ◽

pp. 762 ◽

Cited By ~ 3

Author(s):

A. C. Chen

Keyword(s):

Molecular Beam Epitaxy ◽

Quantum Well ◽

Molecular Beam ◽

Multiple Quantum Well ◽

Quantum Well Lasers ◽

Multiple Quantum ◽

Gas Source

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GaAs/AlGaAs multiple quantum well lasers grown by molecular beam epitaxy

ICSE '96. 1996 IEEE International Conference on Semiconductor Electronics. Proceedings ◽

10.1109/smelec.1996.616478 ◽

2002 ◽

Author(s):

D.H. Zhang ◽

C.Y. Li ◽

S.F. Yoon ◽

A. Raman

Keyword(s):

Molecular Beam Epitaxy ◽

Quantum Well ◽

Molecular Beam ◽

Multiple Quantum Well ◽

Quantum Well Lasers ◽

Multiple Quantum

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Channeled‐substrate GaAs/AlGaAs multiple quantum well lasers grown by molecular beam epitaxy

Applied Physics Letters ◽

10.1063/1.95326 ◽

1984 ◽

Vol 45 (6) ◽

pp. 606-608 ◽

Cited By ~ 7

Author(s):

Yao‐Hwa Wu ◽

Michael Werner ◽

Shyh Wang

Keyword(s):

Molecular Beam Epitaxy ◽

Quantum Well ◽

Molecular Beam ◽

Multiple Quantum Well ◽

Quantum Well Lasers ◽

Multiple Quantum

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