scholarly journals UV electroluminescence emissions from high-quality ZnO/ZnMgO multiple quantum well active layer light-emitting diodes

RSC Advances ◽  
2021 ◽  
Vol 11 (62) ◽  
pp. 38949-38955
Author(s):  
Shanshan Chen ◽  
Tengrun Zhan ◽  
Xinhua Pan ◽  
Haiping He ◽  
Jingyun Huang ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Quantum Well ◽  
Active Layer ◽  
Molecular Beam ◽  
Light Emitting Diodes ◽  
Multiple Quantum Well ◽  
Multiple Quantum ◽  
High Quality ◽  
Light Emitting ◽  
Uv Emission

ZnO/ZnMgO MQWs was employed as an active layer to fabricate p-GaN/MQWs/n-ZnO diode by molecular beam epitaxy. It showed sharp and efficient UV emission around 370 nm due to constraint of carriers in high-quality MQWs well layer.

GaInN/GaN multiple-quantum-well light-emitting diodes grown by molecular beam epitaxy

1999 ◽  
Vol 74 (24) ◽  
pp. 3616-3618 ◽  
Author(s):  
N. Grandjean ◽  
J. Massies ◽  
S. Dalmasso ◽  
P. Vennéguès ◽  
L. Siozade ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Quantum Well ◽  
Molecular Beam ◽  
Light Emitting Diodes ◽  
Multiple Quantum Well ◽  
Multiple Quantum ◽  
Light Emitting

Electroluminescence of In0.53Ga0.47As/GaAs0.5Sb0.5Type-II Multiple Quantum Well Light-Emitting Diodes Grown on (111)B InP by Molecular Beam Epitaxy

2002 ◽  
Vol 41 (Part 1, No. 7A) ◽  
pp. 4515-4516 ◽  
Author(s):  
Yuichi Kawamura ◽  
Toshiyuki Higashino ◽  
Masato Fujimoto ◽  
Masanobu Amano ◽  
Takuji Yokoyama ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Quantum Well ◽  
Molecular Beam ◽  
Light Emitting Diodes ◽  
Multiple Quantum Well ◽  
Multiple Quantum ◽  
Light Emitting

High-quality InGaP and InGaP/InAlP multiple quantum well grown by gas-source molecular beam epitaxy

1994 ◽  
Vol 136 (1-4) ◽  
pp. 306-309 ◽  
Author(s):  
Chunhui Yan ◽  
Dianzhao Sun ◽  
Hongxi Guo ◽  
Xiaobing Li ◽  
Shirong Zu ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Quantum Well ◽  
Molecular Beam ◽  
Multiple Quantum Well ◽  
Multiple Quantum ◽  
High Quality ◽  
Gas Source

High quality above 3-μm mid-infrared InGaAsSb/AlGaInAsSb multiple-quantum well grown by molecular beam epitaxy

2014 ◽  
Vol 23 (1) ◽  
pp. 017805 ◽  
Author(s):  
Jun-Liang Xing ◽  
Yu Zhang ◽  
Ying-Qiang Xu ◽  
Guo-Wei Wang ◽  
Juan Wang ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Quantum Well ◽  
Molecular Beam ◽  
Multiple Quantum Well ◽  
Multiple Quantum ◽  
High Quality ◽  
Mid Infrared

Resonant-cavity InGaN multiple-quantum-well green light-emitting diode grown by molecular-beam epitaxy

2002 ◽  
Vol 80 (12) ◽  
pp. 2198-2200 ◽  
Author(s):  
F. B. Naranjo ◽  
S. Fernández ◽  
M. A. Sánchez-Garcı́a ◽  
F. Calle ◽  
E. Calleja
Keyword(s):  
Molecular Beam Epitaxy ◽  
Quantum Well ◽  
Molecular Beam ◽  
Light Emitting Diode ◽  
Resonant Cavity ◽  
Multiple Quantum Well ◽  
Green Light ◽  
Multiple Quantum ◽  
Light Emitting

Low-Temperature Operation of Green, Blue and UV InGaN/GaN Multiple-Quantum-Well Light-Emitting Diodes

2003 ◽  
Vol 764 ◽  
Author(s):  
X. A. Cao ◽  
S. F. LeBoeuf ◽  
J. L. Garrett ◽  
A. Ebong ◽  
L. B. Rowland ◽  
...  
Keyword(s):  
Quantum Well ◽  
Light Emitting Diodes ◽  
Multiple Quantum Well ◽  
Light Output ◽  
Localized States ◽  
Multiple Quantum ◽  
Nonradiative Recombination ◽  
Light Emitting ◽  
Temperature Range ◽  
Green Leds

Absract:Temperature-dependent electroluminescence (EL) of InGaN/GaN multiple-quantum-well light-emitting diodes (LEDs) with peak emission energies ranging from 2.3 eV (green) to 3.3 eV (UV) has been studied over a wide temperature range (5-300 K). As the temperature is decreased from 300 K to 150 K, the EL intensity increases in all devices due to reduced nonradiative recombination and improved carrier confinement. However, LED operation at lower temperatures (150-5 K) is a strong function of In ratio in the active layer. For the green LEDs, emission intensity increases monotonically in the whole temperature range, while for the blue and UV LEDs, a remarkable decrease of the light output was observed, accompanied by a large redshift of the peak energy. The discrepancy can be attributed to various amounts of localization states caused by In composition fluctuation in the QW active regions. Based on a rate equation analysis, we find that the densities of the localized states in the green LEDs are more than two orders of magnitude higher than that in the UV LED. The large number of localized states in the green LEDs are crucial to maintain high-efficiency carrier capture at low temperatures.

High-Bright InGaN Multiple-Quantum-Well Blue Light-Emitting Diodes on Si (111) Using AlN/GaN Multilayers with a Thin AlN/AlGaN Buffer Layer

2003 ◽  
Vol 42 (Part 2, No. 3A) ◽  
pp. L226-L228 ◽  
Author(s):  
Baijun Zhang ◽  
Takashi Egawa ◽  
Hiroyasu Ishikawa ◽  
Yang Liu ◽  
Takashi Jimbo
Keyword(s):  
Quantum Well ◽  
Buffer Layer ◽  
Blue Light ◽  
Light Emitting Diodes ◽  
Multiple Quantum Well ◽  
Multiple Quantum ◽  
Light Emitting ◽  
Algan Buffer
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