Shallow angle lapping of III‐V semiconductor thin layer structures by an ion beam/chemical etching technique

1993 ◽  
Vol 63 (8) ◽  
pp. 1041-1043
Author(s):  
D. W. Eckart ◽  
L. M. Casas
Author(s):  
Dongmei Meng ◽  
Joe Rupley ◽  
Chris McMahon

Abstract This paper presents decapsulation solutions for devices bonded with Cu wire. By removing mold compound to a thin layer using a laser ablation tool, Cu wire bonded packages are decapsulated using wet chemical etching by controlling the etch time and temperature. Further, the paper investigates the possibilities of decapsulating Cu wire bonded devices using full wet chemical etches without the facilitation of laser ablation removing much of mold compound. Additional discussion on reliability concerns when evaluating Cu wirebond devices is addressed here. The lack of understanding of the reliability of Cu wire bonded packages creates a challenge to the FA engineer as they must develop techniques to help understanding the reliability issue associated with Cu wire bonding devices. More research and analysis are ongoing to develop appropriate analysis methods and techniques to support the Cu wire bonding device technology in the lab.


2015 ◽  
Vol 48 (36) ◽  
pp. 365303 ◽  
Author(s):  
Jingchang Sun ◽  
Ting Zhao ◽  
Zhangwei Ma ◽  
Ming Li ◽  
Cheng Chang ◽  
...  

1999 ◽  
Vol 7 (2) ◽  
pp. 24-25
Author(s):  
Lisa Litz-Montanaro

In the course of both physical and failure analysis of semiconductor chips (i.e., verifying what you actually deposited as a layer, vs, what caused the circuit to fail), it is essential to have appropriate deprocessing tools at your disposal in order to evaluate complex semiconductor structures, Deprocessing techniques are developed for each product manufactured and involve multi-step procedures that reveal the layer-by-layer secrets of the chip, These techniques require constant tweaking in duration and procedure as the manufacturing process imposes changes and as the architecture of the semiconductor changes. While there are many tools that assist in these analytical pursuits, such as RIE (reactive ion etching - a dry etching technique), ion milling, and microcleaving, the wet chemical etching of tungsten is sometimes more reproducible than RIE techniques.


2015 ◽  
Vol 5 (7) ◽  
pp. 1647 ◽  
Author(s):  
A. L. Chekhov ◽  
V. L. Krutyanskiy ◽  
V. A. Ketsko ◽  
A. I. Stognij ◽  
T. V. Murzina

2020 ◽  
Vol 36 (6) ◽  
pp. 1212-1217
Author(s):  
Amit Kumar ◽  
Ankit Srivastava ◽  
Tanurup Das ◽  
Abhimanyu Harshey ◽  
Veer Raj Saini ◽  
...  

Serial number restoration is a frequently encountered problem in forensic science laboratories for the investigation of theft and burglary cases. These identification marks are generally introduced over metallic surfaces of different vehicle parts and firearms by various means. Chemical etching is one of the most effective and simple technique to restore obliterated, erased, over-stamped and over-engraved marks on metallic surfaces. Several significant studies on restoration of engraved markings on aluminium surfaces were previously reported. The present study attempts to find out an efficient and fast etching reagent to restore obliterated stamped marks on aluminium surfaces. Ten effective etching reagents previously reported by various researchers in their restoration studies were assessed in the present experiment. Etching reagents were individually applied on obliterated surfaces by the cotton swabbing method. The Reagent 3 (ferric chloride 25 g, conc. HCl 25 mL, distilled water 100 mL) was found out to be the most sensitive and rapid (4–6 min) for the restoration on aluminium surfaces. The study also revealed that the absence of an alkaline compound in etching reagent potentially accelerates the speed of the restoration process.


2022 ◽  
pp. 1-10
Author(s):  
Dong Hyun Kim ◽  
Eun-Mi Kim ◽  
Gi-Seok Heo ◽  
Dong Wook Lee ◽  
Jin Young Oh ◽  
...  

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