scholarly journals Growth, structure, and transport properties of thin (>10 nm) n-type microcrystalline silicon prepared on silicon oxide and its application to single-electron transistor

2001 ◽  
Vol 89 (11) ◽  
pp. 6265-6271 ◽  
Author(s):  
T. Kamiya ◽  
K. Nakahata ◽  
Y. T. Tan ◽  
Z. A. K. Durrani ◽  
I. Shimizu
Keyword(s):  
Transport Properties ◽  
Silicon Oxide ◽  
Single Electron ◽  
Single Electron Transistor ◽  
Microcrystalline Silicon ◽  
Growth Structure

A Nanodamascene Process to be used as a Building Block for Nanodevices

2006 ◽  
Vol 961 ◽  
Author(s):  
Christian Dubuc ◽  
Jacques Beauvais ◽  
Dominique Drouin
Keyword(s):  
High Resolution ◽  
Building Block ◽  
Chemical Mechanical Polishing ◽  
Silicon Oxide ◽  
Single Electron ◽  
Single Electron Transistor ◽  
Filling Material ◽  
Single Electron Transistors ◽  
Electron Transistors ◽  
Related Process

ABSTRACTWe report a single-electron transistor concept and its related process enabling the fabrication of ultrasmall junction capacitance. The method utilizes a nanodamascene approach where trenches in silicon oxide are covered with a filling material and planarized with chemical mechanical polishing. Single-electron transistors fabricated with this approach were characterized up to 433 K and demonstrated that the nanodamascene process has high resolution, is relatively simple and is highly scalable.

Transport properties of a silicon single‐electron transistor at 4.2 K

1995 ◽  
Vol 66 (5) ◽  
pp. 613-615 ◽  
Author(s):  
Hideyuki Matsuoka ◽  
Shin’ichiro Kimura
Keyword(s):  
Transport Properties ◽  
Single Electron ◽  
Single Electron Transistor

Transport Properties of Resistively-Coupled Single-Electron Transistor

1998 ◽  
Author(s):  
Fujio WAKAYA ◽  
Kazuki KITAMURA ◽  
Shuichi IWABUCHI ◽  
Kenji GAMO
Keyword(s):  
Transport Properties ◽  
Single Electron ◽  
Single Electron Transistor

Transport Properties of a Resistively-Coupled Single-Electron Transistor

1999 ◽  
Vol 38 (Part 1, No. 4B) ◽  
pp. 2470-2472 ◽  
Author(s):  
Fujio Wakaya ◽  
Kazuki Kitamura ◽  
Shuichi Iwabuchi ◽  
Kenji Gamo
Keyword(s):  
Transport Properties ◽  
Single Electron ◽  
Single Electron Transistor

Transport properties of a quantum dot in quantum Hall regimes probed by a single-electron transistor

2009 ◽  
Vol 94 (23) ◽  
pp. 232109 ◽  
Author(s):  
J. C. Chen ◽  
Ming-Yang Li ◽  
T. Ueda ◽  
S. Komiyama
Keyword(s):  
Quantum Dot ◽  
Transport Properties ◽  
Quantum Hall ◽  
Single Electron ◽  
Single Electron Transistor

scholarly journals Transport properties of a superconducting single-electron transistor coupled to a nanomechanical oscillator

2009 ◽  
Vol 79 (13) ◽  
Author(s):  
V. Koerting ◽  
T. L. Schmidt ◽  
C. B. Doiron ◽  
B. Trauzettel ◽  
C. Bruder
Keyword(s):  
Transport Properties ◽  
Single Electron ◽  
Single Electron Transistor
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