Thermally stable oxygen implant isolation ofp‐type Al0.2Ga0.8As

1993 ◽  
Vol 62 (20) ◽  
pp. 2536-2538 ◽  
Author(s):  
John C. Zolper ◽  
Albert G. Baca ◽  
Scott A. Chalmers
Keyword(s):  
Thermally Stable ◽  
Stable Oxygen

Thermally Stable Oxygen and Nitrogen Implant Isolation of C-Doped Al0.35Ga0.65As

1993 ◽  
Vol 316 ◽  
Author(s):  
J. C. Zolper ◽  
M. E. Sherwin ◽  
A. G. Baca ◽  
R. P. Schneider
Keyword(s):  
Heterojunction Bipolar Transistors ◽  
Bipolar Transistors ◽  
High Resistivity ◽  
Thermally Stable ◽  
Stable Oxygen ◽  
Si Doped ◽  
Nitrogen Ion ◽  
First Time ◽  
Resistance Data ◽  
Anneal Temperature

ABSTRACTOxygen and nitrogen ion implantation have been applied, for the first time, to C-doped Al0.35Ga0.65As layers produce high resistivity regions (ps ≥ 1×1010 Ω/□) that are stable after annealing at 900 ºC. A dose threshold for stable compensation for both O and N ions was found above 8×1013 cm-2 for samples doped at 2×1018 cm-3. Although O implantation has been reported to form stable compensation in Si-doped and Be-doped AlGaAs, the ability of nitrogen implantation to produce thermally stable compensation has not been previously reported and may be due to a C-N complex. The existence of this C-N complex is supported by results for O- and N-implants into C-doped GaAs where N formed thermally stable compensation but O did not. Sheet resistance data versus anneal temperature and estimates of the depth of the defect levels are reported. This result will have application to heterojunction bipolar transistors and complementary heterostructure field effect transistor technologies that employ C-doped AlGaAs or GaAs layers along with high temperature post-isolation processing.

3D core–shell architecture from infiltration and beneficial reactive sintering as highly efficient and thermally stable oxygen reduction electrode

2014 ◽  
Vol 2 (5) ◽  
pp. 1284-1293 ◽  
Author(s):  
Dengjie Chen ◽  
Guangming Yang ◽  
Francesco Ciucci ◽  
Moses O. Tadé ◽  
Zongping Shao
Keyword(s):  
Oxygen Reduction ◽  
Core Shell ◽  
Thermally Stable ◽  
Reactive Sintering ◽  
Highly Efficient ◽  
Stable Oxygen

Investigation of the V4+-Centre in 6H- and 4H-SIC by the Method of Spectral-Hole Burning

1998 ◽  
Vol 512 ◽  
Author(s):  
C. Hecht ◽  
R. Kummer ◽  
A. Winnacker
Keyword(s):  
Electronic Properties ◽  
Room Temperature ◽  
Hole Burning ◽  
Band Offset ◽  
Spectral Hole Burning ◽  
Type Ii ◽  
Thermally Stable ◽  
Spectral Hole

ABSTRACTIn the context of spectral-hole burning experiments in 4H- and 6H-SiC doped with vanadium the energy positions of the V4+/5+ level in both polytypes were determined in order to resolve discrepancies in literature. From these numbers the band offset of 6H/4H-SiC is calculated by using the Langer-Heinrich rule, and found to be of staggered type II. Furthermore the experiments show that thermally stable electronic traps exist in both polytypes at room temperature and considerably above, which may result in longtime transient shifts of electronic properties.

Advanced Thermally Stable Jet Fuels Development Program Annual Report. Volume 1. Model and Experiment System Development

1990 ◽  
Author(s):  
Elmer Klavetter ◽  
Tim O'Hern ◽  
Bill Marshall ◽  
Merrill Jr. ◽  
Frye Ray ◽  
...  
Keyword(s):  
Annual Report ◽  
System Development ◽  
Development Program ◽  
Jet Fuels ◽  
Thermally Stable ◽  
Experiment System

Acetylene chemisorption at palladium: Effect of temperature and structure of the surface

1984 ◽  
Vol 49 (6) ◽  
pp. 1448-1458
Author(s):  
Josef Kopešťanský
Keyword(s):  
Work Function ◽  
Atomic Hydrogen ◽  
Effect Of Temperature ◽  
Thermally Stable ◽  
Template Effect ◽  
Temperature Range ◽  
Adsorbed Layers ◽  
Different Types ◽  
Adsorption Complexes ◽  
Low Coverage

The effect of temperature and structure of the palladium surfaces on acetylene chemisorption was studied along with the interaction of the adsorbed layers with molecular and atomic hydrogen. The work function changes were measured and combined with the volumetric measurements and analysis of the products. At temperature below 100 °C, acetylene is adsorbed almost without dissociation and forms at least two different types of thermally stable adsorption complexes. Acetylene adsorbed at 200 °C is partly decomposed, especially in the low coverage region. Besides the above mentioned effects, the template effect of adsorbed acetylene was studied in the temperature range from -80° to 25 °C. It has been shown that this effect is a typical phenomenon of the palladium-acetylene system which is not due to surface impurities.

Thermally Stable Half-Sandwich Benzhydryl Ln(II) (Ln = Sm, Yb) Complexes Supported by Sterically Demanding Carbazolyl and Fluorenyl Ligands

2019 ◽  
Vol 38 (24) ◽  
pp. 4615-4624 ◽  
Author(s):  
Alexander N. Selikhov ◽  
Andrey S. Shavyrin ◽  
Anton V. Cherkasov ◽  
Georgy K. Fukin ◽  
Alexander A. Trifonov
Keyword(s):  
Thermally Stable ◽  
Sterically Demanding ◽  
Half Sandwich
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