scholarly journals Picosecond carrier lifetime in erbium‐doped‐GaAs

1993 ◽  
Vol 62 (10) ◽  
pp. 1128-1130 ◽  
Author(s):  
S. Gupta ◽  
S. Sethi ◽  
P. K. Bhattacharya
Keyword(s):  
Carrier Lifetime ◽  
Erbium Doped

scholarly journals Carrier lifetime in erbium-doped GaN waveguide emitting in 1540 nm wavelength

2010 ◽  
Vol 97 (24) ◽  
pp. 241105 ◽  
Author(s):  
Q. Wang ◽  
R. Hui ◽  
R. Dahal ◽  
J. Y. Lin ◽  
H. X. Jiang
Keyword(s):  
Carrier Lifetime ◽  
Erbium Doped

Er-Doped GaAs for High Speed Photoconductor Applications

1993 ◽  
Vol 301 ◽  
Author(s):  
S. Gupta ◽  
S. Sethi ◽  
P. K. Bhattacharya ◽  
S. Williamson
Keyword(s):  
Optical Communications ◽  
Potential Application ◽  
High Speed ◽  
Doping Concentration ◽  
Carrier Lifetime ◽  
High Resistivity ◽  
Light Sources ◽  
Erbium Doped ◽  
Er Doped

ABSTRACTThe observation of 1.54 μm luminescence in erbium-doped-GaAs (GaAs:Er) and AlxGal-xAs, has stimulated research efforts because of their potential application to light sources in optical communications. In this paper, we study a different aspect of the photoresponse behavior of this material. The dependence of the carrier lifetime on the doping concentration of Erbium is investigated in GaAs:Er grown by MBE. A reduction in the carrier lifetime down to ∼1 ps is observed for the highest doping (∼5×1019 cm−3) investigated. Together with the high-resistivity observed for the higher doping values, this material serves as a novel photoconductor material for high-speed optoelectronics.

Thermal properties of an erbium-doped fibre amplifier

1990 ◽  
Vol 137 (3) ◽  
pp. 155 ◽  
Author(s):  
C.A. Millar ◽  
T.J. Whitley ◽  
S.C. Fleming
Keyword(s):  
Thermal Properties ◽  
Fibre Amplifier ◽  
Erbium Doped

Spectroscopic Properties of Neodymium and Erbium-Doped Magnesium Oxide Ceramics

2015 ◽  
Author(s):  
T. Sanamyan ◽  
C. Cooper ◽  
G. Gilde ◽  
A. C. Sutorik ◽  
M. Dubinskii
Keyword(s):  
Magnesium Oxide ◽  
Spectroscopic Properties ◽  
Oxide Ceramics ◽  
Erbium Doped

Microwave transmission method for measuring minority-carrier lifetime in silicon slices

1971 ◽  
Vol 7 (25) ◽  
pp. 754
Author(s):  
R.E. Thomas ◽  
V. Makios ◽  
S. Ogletree ◽  
R. Mckillican
Keyword(s):  
Carrier Lifetime ◽  
Minority Carrier ◽  
Minority Carrier Lifetime ◽  
Transmission Method ◽  
Microwave Transmission

Erbium-doped GaAs light-emitting diodes emitting erbium f-shell luminescence at 1.54 [micro sign]m

1988 ◽  
Vol 24 (12) ◽  
pp. 740 ◽  
Author(s):  
P.S. Whitney ◽  
K. Uwai ◽  
H. Nakagome ◽  
K. Takahei
Keyword(s):  
Light Emitting Diodes ◽  
Light Emitting ◽  
Erbium Doped

Efficient erbium-doped fibre amplifier pumped at 820 nm

1990 ◽  
Vol 26 (23) ◽  
pp. 1936 ◽  
Author(s):  
M. Nakazawa ◽  
Y. Kimura ◽  
E. Yoshida ◽  
K. Suzuki
Keyword(s):  
Fibre Amplifier ◽  
Erbium Doped
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