Effect of oxygen concentration on the kinetics of thermal donor formation in silicon at temperatures between 350 and 500 °C

1993 ◽  
Vol 62 (13) ◽  
pp. 1525-1526 ◽  
Author(s):  
C. A. Londos ◽  
M. J. Binns ◽  
A. R. Brown ◽  
S. A. McQuaid ◽  
R. C. Newman
Keyword(s):  
Oxygen Concentration ◽  
Thermal Donor ◽  
Donor Formation ◽  
Effect Of Oxygen ◽  
Kinetics Of

On the Kinetics of Oxygen Clustering and Thermal Donor Formation in Czochralski Silicon

1985 ◽  
Vol 59 ◽  
Author(s):  
T. Y. Tan ◽  
R. Kleinhenz ◽  
C. P. Schneider
Keyword(s):  
Oxygen Concentration ◽  
Kinetic Models ◽  
The Other ◽  
Concentration Data ◽  
Czochralski Silicon ◽  
Thermal Donor ◽  
Donor Formation ◽  
Small Clusters ◽  
Kinetics Of ◽  
Overall Kinetics

ABSTRACTWe report the results of an experiment of annealing Czochralski silicon at 450°C for up to 500 hrs. Concentrations of oxygen atoms (Ci) and thermal donors (TD) have both been monitored. Analyses of the oxygen concentration data yielded the apparent interpretation that the overall kinetics is dominated by the formation of small clusters (dimers and trimers). This cannot account for TD formation, since they are supposed to be larger clusters. On the other hand, analyses of existing TD kinetic models did not yield calculated Ci values to satisfactorily account for the present Ci data. We believe that a satisfactory TD model is not yet available.

The Kinetics of Oxygen Loss and Thermal Donor Formation in Silicon at Temperatures between 350°C and 500°C

1993 ◽  
Vol 143-147 ◽  
pp. 963-968 ◽  
Author(s):  
S.A. McQuaid ◽  
Charalamos A. Londos ◽  
M.J. Binns ◽  
R.C. Newman ◽  
J.H. Tucker
Keyword(s):  
Oxygen Loss ◽  
Thermal Donor ◽  
Donor Formation ◽  
Kinetics Of

Oxygen Gettering and Thermal Donor Formation at Post-Implantation Annealing of Hydrogen Implanted Czochralski Silicon

1997 ◽  
Vol 469 ◽  
Author(s):  
A. G. Ulyashin ◽  
Yu. A. Bumay ◽  
W. R. Fahrner ◽  
A. I. Ivanovo ◽  
R. Job ◽  
...  
Keyword(s):  
Secondary Ion Mass Spectrometry ◽  
Hydrogen Ions ◽  
Enhanced Diffusion ◽  
Thermal Donor ◽  
Float Zone ◽  
Donor Formation ◽  
Effect Of Oxygen ◽  
P Type ◽  
Secondary Ion ◽  
Post Implantation

ABSTRACTThe effect of oxygen gettering by buried defect layers at post-implantation annealing of hydrogen implanted Czochralski (Cz) grown silicon has been investigated. Hydrogen ions were implanted with an energy of 180 keV and doses of 2.7.1016cm−2 into p-type Cz and for comparison into p-type float zone (Fz) Si. The samples were annealed at temperatures between 400 °C and 1200 °C in a forming gas ambient and examined by secondary ion mass spectrometry (SIMS) in order to measure the hydrogen and oxygen concentration profiles. Spreading resistance probe (SRP) measurements were used to obtain depth resolved profiles of the resistivity. The observed changes of the resistivity after post-implantation annealing of hydrogen implanted Cz and Fz Si can be explained by hydrogen enhanced thermal donor formation processes (oxygen or hydrogen related) and charges at the SiOx precipitates. The effective oxygen gettering in hydrogen implanted Cz silicon is attributed to hydrogen enhanced diffusion of oxygen to buried defect layers.

Calibration Factor for Determination of Interstitial Oxygen Concentration in Germanium by Infrared Absorption

2005 ◽  
Vol 108-109 ◽  
pp. 735-740 ◽  
Author(s):  
Valentin V. Litvinov ◽  
Bengt Gunnar Svensson ◽  
L.I. Murin ◽  
J. Lennart Lindström ◽  
Vladimir P. Markevich
Keyword(s):  
Oxygen Concentration ◽  
Infrared Absorption ◽  
Secondary Ion Mass Spectrometry ◽  
Calibration Coefficient ◽  
Interstitial Oxygen ◽  
Oxygen Loss ◽  
Donor Formation ◽  
Kinetics Of ◽  
Secondary Ion

Intensities of infrared absorption due to asymmetric stretching vibrations of interstitial oxygen atoms in Ge crystals enriched with 16O and 18O isotopes have been compared with oxygen concentrations determined by means of secondary ion mass spectrometry (SIMS). For Ge samples with oxygen content less than 5⋅1017 cm-3 a good correlation has been found between the values of oxygen concentration and values of absorption coefficient in maximum of the absorption band at 855.6 cm-1 with a proportionality coefficient CO = 0.95.1017 сm-2. It is argued that kinetics of oxygen-related thermal double donor formation and oxygen loss upon heat-treatments of Ge crystals at 350 оС cannot be described properly with the application of calibration coefficient CO = 5.1016 cm-2, which is widely used for the determination of oxygen concentration in Ge crystals.

scholarly journals Formation Kinetics of Thermal Donors in Silicon

1985 ◽  
Vol 59 ◽  
Author(s):  
Jeffrey T. Borenstein ◽  
David Peak ◽  
James W. Corbett
Keyword(s):  
Electronic Absorption Spectra ◽  
Reaction Rates ◽  
Active Species ◽  
Czochralski Silicon ◽  
Thermal Donor ◽  
Formation Kinetics ◽  
Initial Oxygen ◽  
Donor Formation ◽  
Kinetics Of ◽  
Donor Species

ABSTRACTThe kinetics of thermal donor formation in Czochralski-silicon at ca. 450° C are explained by a simple model based on the work of Suezawa and Sumino which derives forward and reverse reaction rates for each electrically active species from the general features of the infrared electronic absorption spectra. The model, which is independent of the chemical nature of the thermal donor core, assumes that all thermal donors beyond the first donor species are chemically stable at the donor formation temperature, and approximates the reactions for species smaller than the first thermal donor as being in chemical equilibrium. The model is shown to be consistent with both sets of the available IR spectra of thermal donors (Oeder-Wagner and Suezawa-Sumino) when differences in the annealing temperature and initial oxygen concentration are taken into account.

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