Effect of Al doping on low‐temperature epitaxy of 3C‐SiC/Si by chemical vapor deposition using hexamethyldisilane as a source material
Keyword(s):
1992 ◽
Vol 139
(12)
◽
pp. 3565-3571
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2000 ◽
Vol 159-160
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pp. 30-34
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Keyword(s):
2000 ◽
Vol 147
(9)
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pp. 3319
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Keyword(s):
1994 ◽
Vol 33
(Part 2, No. 8A)
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pp. L1052-L1055
High Temperature Material Processes An International Quarterly of High-Technology Plasma Processes
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2006 ◽
Vol 10
(3)
◽
pp. 457-466
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