Determination of low temperature impact ionization coefficients in GaAs by electroluminescence measurements on single barrier tunneling structures

1992 ◽  
Vol 61 (7) ◽  
pp. 825-827 ◽  
Author(s):  
J. W. Cockburn ◽  
M. S. Skolnick ◽  
J. P. R. David ◽  
R. Grey ◽  
G. Hill ◽  
...  
Keyword(s):  
Low Temperature ◽  
Impact Ionization ◽  
Temperature Impact ◽  
Ionization Coefficients ◽  
Barrier Tunneling

Time-Averaged Quantity of a Low-Temperature Semiconductor Experiment Reflects Scaling Behavior of Saddle-Node Bifurcation to Chaos

1994 ◽  
Vol 49 (9) ◽  
pp. 838-842 ◽  
Author(s):  
R. Richter ◽  
A. Kittel ◽  
J. Paris
Keyword(s):  
Magnetic Field ◽  
Low Temperature ◽  
Impact Ionization ◽  
Scaling Behavior ◽  
Type I ◽  
Saddle Node Bifurcation ◽  
Time Resolved ◽  
Saddle Node ◽  
Temperature Impact ◽  
P Type

Abstract Low-temperature impact ionization breakdown in p-type germanium crystals gives rise to spontaneous oscillations of the current flow. We demonstrate experimental evidence of a particularly high-conducting dynamical state that is limited to a finite parameter regime of the current versus magnetic field characteristic. After bifurcation from a coexisting nonoscillatory state to periodicity, one observes a type-I intermittent transition to chaos and, eventually, a jump back to the nonoscil­latory branch upon increasing the magnetic field control parameter. The scaling behavior of the underlying saddle-node bifurcation, already found in time-resolved measurements, also becomes visible in a square-root dependence of the time-averaged current developing both prior to and after the critical point. Our result might be of interest for time-averaged information is accessible.

Determination of Impact Ionization Coefficients Measured from 4H Silicon Carbide Avalanche Photodiodes

2007 ◽  
Vol 556-557 ◽  
pp. 339-342 ◽  
Author(s):  
W.S. Loh ◽  
C. Mark Johnson ◽  
J.S. Ng ◽  
Peter M. Sandvik ◽  
Steve Arthur ◽  
...  
Keyword(s):  
Impact Ionization ◽  
Avalanche Photodiodes ◽  
Submicron Devices ◽  
Illuminating Light ◽  
Factor Data ◽  
Ionization Coefficients ◽  
P Type ◽  
Dark Currents ◽  
The Impact

Hole initiated avalanche multiplication characteristics of 4H-SiC avalanche photodiodes have been studied. The diodes had n+-n-p SiC epitaxial layers grown on a p-type substrate. These 1 mm2 devices had very low dark currents and exhibited sharp breakdown at voltages of approximately 500V. The diodes multiplication characteristics appeared to be identical when the wavelength of the illuminating light from the top varied from 288 to 325nm, implying that almost pure hole initiated multiplication was occurring. The multiplication factor data were modelled using a local multiplication model with impact ionization coefficients of 4H-SiC reported by various authors. The impact ionization coefficients extracted from submicron devices by Ng et al. were found to give accurate predictions for multiplication factors within the uncertainties of the doping levels. This result suggests that their ionization coefficients can be applied to thicker bulk 4H-SiC structures.

Low‐temperature impact ionization rates in (111) oriented InP

1985 ◽  
Vol 47 (8) ◽  
pp. 865-866 ◽  
Author(s):  
Fukunobu Osaka ◽  
Yutaka Kishi ◽  
Masahiro Kobayashi ◽  
Takashi Mikawa
Keyword(s):  
Low Temperature ◽  
Impact Ionization ◽  
Temperature Impact ◽  
Ionization Rates

Experimental Determination of Impact Ionization Coefficients Along 〈1120〉 in 4H-SiC

2020 ◽  
Vol 67 (9) ◽  
pp. 3740-3744
Author(s):  
Dionysios Stefanakis ◽  
Xilun Chi ◽  
Takuya Maeda ◽  
Mitsuaki Kaneko ◽  
Tsunenobu Kimoto
Keyword(s):  
Experimental Determination ◽  
Impact Ionization ◽  
Ionization Coefficients

On the Scaling of Type-1 Intermittency in a Semiconductor Experiment

1991 ◽  
Vol 46 (12) ◽  
pp. 1012-1014 ◽  
Author(s):  
R. Richter ◽  
U. Rau ◽  
A. Kittel ◽  
G. Heinz ◽  
J. Peinke ◽  
...  
Keyword(s):  
Low Temperature ◽  
Impact Ionization ◽  
Type I ◽  
Temperature Impact ◽  
Spontaneous Oscillations ◽  
Characteristic Features

Abstract Spontaneous oscillations developing during low-temperature impact ionization breakdown in extrinsic germanium are looked at with respect to characteristic features of type-I intermittency

Experimental determination of impact ionization coefficients in

1983 ◽  
Vol 4 (6) ◽  
pp. 181-185 ◽  
Author(s):  
G.E. Bulman ◽  
V.M. Robbins ◽  
K.F. Brennan ◽  
K. Hess ◽  
G.E. Stillman
Keyword(s):  
Experimental Determination ◽  
Impact Ionization ◽  
Ionization Coefficients

scholarly journals Avalanche Diodes with Low Temperature Dependence in 4H-SiC Suitable for Parallel Protection

2011 ◽  
Vol 679-680 ◽  
pp. 567-570 ◽  
Author(s):  
Duy Minh Nguyen ◽  
Gontran Pâques ◽  
Nicolas Dheilly ◽  
Christophe Raynaud ◽  
Dominique Tournier ◽  
...  
Keyword(s):  
Low Temperature ◽  
Temperature Dependence ◽  
Impact Ionization ◽  
Temperature Range ◽  
Avalanche Diodes ◽  
Ionization Coefficients

Avalanche diodes have been fabricated on 4H-SiC substrate. These diodes show an abrupt avalanche voltage of about 59 V which corresponds to the calculated theoretical one using our previously determined impact ionization coefficients. This avalanche voltage increases by as small as 3.7 mV/K over the investigated temperature range (150K-420K).

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