Low‐temperature impact ionization rates in (111) oriented InP

1985 ◽  
Vol 47 (8) ◽  
pp. 865-866 ◽  
Author(s):  
Fukunobu Osaka ◽  
Yutaka Kishi ◽  
Masahiro Kobayashi ◽  
Takashi Mikawa
1994 ◽  
Vol 49 (9) ◽  
pp. 838-842 ◽  
Author(s):  
R. Richter ◽  
A. Kittel ◽  
J. Paris

Abstract Low-temperature impact ionization breakdown in p-type germanium crystals gives rise to spontaneous oscillations of the current flow. We demonstrate experimental evidence of a particularly high-conducting dynamical state that is limited to a finite parameter regime of the current versus magnetic field characteristic. After bifurcation from a coexisting nonoscillatory state to periodicity, one observes a type-I intermittent transition to chaos and, eventually, a jump back to the nonoscil­latory branch upon increasing the magnetic field control parameter. The scaling behavior of the underlying saddle-node bifurcation, already found in time-resolved measurements, also becomes visible in a square-root dependence of the time-averaged current developing both prior to and after the critical point. Our result might be of interest for time-averaged information is accessible.


1991 ◽  
Vol 46 (12) ◽  
pp. 1012-1014 ◽  
Author(s):  
R. Richter ◽  
U. Rau ◽  
A. Kittel ◽  
G. Heinz ◽  
J. Peinke ◽  
...  

Abstract Spontaneous oscillations developing during low-temperature impact ionization breakdown in extrinsic germanium are looked at with respect to characteristic features of type-I intermittency


1992 ◽  
Vol 61 (7) ◽  
pp. 825-827 ◽  
Author(s):  
J. W. Cockburn ◽  
M. S. Skolnick ◽  
J. P. R. David ◽  
R. Grey ◽  
G. Hill ◽  
...  

Fractals ◽  
1993 ◽  
Vol 01 (04) ◽  
pp. 1068-1074
Author(s):  
R. RICHTER ◽  
A. KITTEL ◽  
K. PYRAGAS ◽  
J. PARISI

The phenomenon of stochastic resonance has been observed when looking at low-temperature impact ionization breakdown in p-type germanium crystals. Originally, such an effect was predicted for the class of bistable nonlinear dynamical systems which are subject to a periodic modulation as well as to random perturbation. We demonstrate first experimental evidence that stochastic resonance can also be detected in a monostable system, i.e., immediately below the onset of finite-amplitude oscillations during semiconductor breakdown.


2006 ◽  
Vol 99 (8) ◽  
pp. 083703 ◽  
Author(s):  
J. M. S. Orr ◽  
P. D. Buckle ◽  
M. Fearn ◽  
G. Giavaras ◽  
P. J. Wilding ◽  
...  

1990 ◽  
Vol 12 (5) ◽  
pp. 423-428 ◽  
Author(s):  
W Clauss ◽  
A Kittel ◽  
U Rau ◽  
J Parisi ◽  
J Peinke ◽  
...  

1993 ◽  
Vol 48 (5-6) ◽  
pp. 633-635 ◽  
Author(s):  
A. Kittel ◽  
R. Richter ◽  
M. Hirsch ◽  
G. Flätgen ◽  
J. Peinke ◽  
...  

Abstract We observe the phenomenon of stochastic resonance in a semiconductor experiment. Originally, such an effect was predicted for bistable dynamical systems that are influenced by a periodic modulation as well as a random perturbation. In that case, a "resonance" peak can be observed in the power spectrum. The phenomenon investigated is the low-temperature impact ionization breakdown. There, bistability results from the competing states of low and high conductance.


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