The determination of impact ionization coefficients in ln0.2Ga0.8As/GaAs strained-layer superlattice mesa photodiodes

1986 ◽  
Vol 15 (4) ◽  
pp. 221-227 ◽  
Author(s):  
G. E. Bulman ◽  
T. E. Zipperian ◽  
L. R. Dawson
Keyword(s):  
Impact Ionization ◽  
Strained Layer ◽  
Strained Layer Superlattice ◽  
Ionization Coefficients

Determination of Impact Ionization Coefficients Measured from 4H Silicon Carbide Avalanche Photodiodes

2007 ◽  
Vol 556-557 ◽  
pp. 339-342 ◽  
Author(s):  
W.S. Loh ◽  
C. Mark Johnson ◽  
J.S. Ng ◽  
Peter M. Sandvik ◽  
Steve Arthur ◽  
...  
Keyword(s):  
Impact Ionization ◽  
Avalanche Photodiodes ◽  
Submicron Devices ◽  
Illuminating Light ◽  
Factor Data ◽  
Ionization Coefficients ◽  
P Type ◽  
Dark Currents ◽  
The Impact

Hole initiated avalanche multiplication characteristics of 4H-SiC avalanche photodiodes have been studied. The diodes had n+-n-p SiC epitaxial layers grown on a p-type substrate. These 1 mm2 devices had very low dark currents and exhibited sharp breakdown at voltages of approximately 500V. The diodes multiplication characteristics appeared to be identical when the wavelength of the illuminating light from the top varied from 288 to 325nm, implying that almost pure hole initiated multiplication was occurring. The multiplication factor data were modelled using a local multiplication model with impact ionization coefficients of 4H-SiC reported by various authors. The impact ionization coefficients extracted from submicron devices by Ng et al. were found to give accurate predictions for multiplication factors within the uncertainties of the doping levels. This result suggests that their ionization coefficients can be applied to thicker bulk 4H-SiC structures.

Experimental Determination of Impact Ionization Coefficients Along 〈1120〉 in 4H-SiC

2020 ◽  
Vol 67 (9) ◽  
pp. 3740-3744
Author(s):  
Dionysios Stefanakis ◽  
Xilun Chi ◽  
Takuya Maeda ◽  
Mitsuaki Kaneko ◽  
Tsunenobu Kimoto
Keyword(s):  
Experimental Determination ◽  
Impact Ionization ◽  
Ionization Coefficients

Experimental determination of impact ionization coefficients in

1983 ◽  
Vol 4 (6) ◽  
pp. 181-185 ◽  
Author(s):  
G.E. Bulman ◽  
V.M. Robbins ◽  
K.F. Brennan ◽  
K. Hess ◽  
G.E. Stillman
Keyword(s):  
Experimental Determination ◽  
Impact Ionization ◽  
Ionization Coefficients

scholarly journals Low Noise Short Wavelength Infrared Avalanche Photodetector Using SB-Based Strained Layer Superlattice

Photonics ◽  
2021 ◽  
Vol 8 (5) ◽  
pp. 148
Author(s):  
Arash Dehzangi ◽  
Jiakai Li ◽  
Manijeh Razeghi
Keyword(s):  
Short Wavelength ◽  
Room Temperature ◽  
Molecular Beam ◽  
Impact Ionization ◽  
Low Noise ◽  
Excess Noise ◽  
Type Ii ◽  
Type Ii Superlattice ◽  
Strained Layer Superlattice ◽  
Ionization Coefficients

We demonstrate low noise short wavelength infrared (SWIR) Sb-based type II superlattice (T2SL) avalanche photodiodes (APDs). The SWIR GaSb/(AlAsSb/GaSb) APD structure was designed based on impact ionization engineering and grown by molecular beam epitaxy on a GaSb substrate. At room temperature, the device exhibits a 50% cut-off wavelength of 1.74 µm. The device was revealed to have an electron-dominated avalanching mechanism with a gain value of 48 at room temperature. The electron and hole impact ionization coefficients were calculated and compared to give a better prospect of the performance of the device. Low excess noise, as characterized by a carrier ionization ratio of ~0.07, has been achieved.

Impact ionization coefficients in In0.2Ga0.8As/GaAs strained‐layer superlattices

1986 ◽  
Vol 49 (4) ◽  
pp. 212-214 ◽  
Author(s):  
G. E. Bulman ◽  
T. E. Zipperian ◽  
L. R. Dawson
Keyword(s):  
Impact Ionization ◽  
Strained Layer ◽  
Ionization Coefficients ◽  
Strained Layer Superlattices

Determination of low temperature impact ionization coefficients in GaAs by electroluminescence measurements on single barrier tunneling structures

1992 ◽  
Vol 61 (7) ◽  
pp. 825-827 ◽  
Author(s):  
J. W. Cockburn ◽  
M. S. Skolnick ◽  
J. P. R. David ◽  
R. Grey ◽  
G. Hill ◽  
...  
Keyword(s):  
Low Temperature ◽  
Impact Ionization ◽  
Temperature Impact ◽  
Ionization Coefficients ◽  
Barrier Tunneling

OBIC Measurements on Avalanche Diodes in 4H-SiC for the Determination of Impact Ionization Coefficients

2012 ◽  
Vol 717-720 ◽  
pp. 545-548 ◽  
Author(s):  
D.M. Nguyen ◽  
Christophe Raynaud ◽  
Mihai Lazar ◽  
Gontran Pâques ◽  
Sigo Scharnholz ◽  
...  
Keyword(s):  
Electric Field ◽  
Light Source ◽  
Impact Ionization ◽  
Optical Beam ◽  
Induced Current ◽  
Carrier Injection ◽  
Field Range ◽  
Avalanche Diodes ◽  
Ionization Coefficients

Optical Beam Induced Current (OBIC) measurements have been performed on 4H-SiC avalanche diodes with very thin and highly doped avalanche region. The light source used in this study is an Ar-laser with a wavelength of 351 nm which results in a mixed carrier injection. From these measurements, impact ionization coefficients for 4H-SiC have been extracted in the electric field range from 3 to 4.8 MV/cm. In combination with ionization coefficients in our previous paper extracted from diodes with lowly doped avalanche region, we propose a set of parameters of impact ionization coefficients for 4H-SiC, applicable to a wide electric field range.

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