Morphological instability of Cu vicinal surfaces during step-flow growth

2001 ◽  
Vol 64 (16) ◽  
Author(s):  
T. Maroutian ◽  
L. Douillard ◽  
H.-J. Ernst
Keyword(s):  
Morphological Instability ◽  
Vicinal Surfaces ◽  
Step Flow ◽  
Step Flow Growth

scholarly journals Temperature-Dependent Photoluminescence of ZnO Thin Films Grown on Off-Axis SiC Substrates by APMOCVD

Materials ◽  
2021 ◽  
Vol 14 (4) ◽  
pp. 1035
Author(s):  
Ivan Shtepliuk ◽  
Volodymyr Khranovskyy ◽  
Arsenii Ievtushenko ◽  
Rositsa Yakimova
Keyword(s):  
Optical Properties ◽  
Structural Quality ◽  
Organic Chemical ◽  
Zno Films ◽  
Vicinal Surfaces ◽  
Temperature Dependent ◽  
Step Flow ◽  
Step Flow Growth ◽  
First Time ◽  
Temperature Dependent Photoluminescence

The growth of high-quality ZnO layers with optical properties congruent to those of bulk ZnO is still a great challenge. Here, for the first time, we systematically study the morphology and optical properties of ZnO layers grown on SiC substrates with off-cut angles ranging from 0° to 8° by using the atmospheric pressure meta–organic chemical vapor deposition (APMOCVD) technique. Morphology analysis revealed that the formation of the ZnO films on vicinal surfaces with small off-axis angles (1.4°–3.5°) follows the mixed growth mode: from one side, ZnO nucleation still occurs on wide (0001) terraces, but from another side, step-flow growth becomes more apparent with the off-cut angle increasing. We show for the first time that the off-cut angle of 8° provides conditions for step-flow growth of ZnO, resulting in highly improved growth morphology, respectively structural quality. Temperature-dependent photoluminescence (PL) measurements showed a strong dependence of the excitonic emission on the off-cut angle. The dependences of peak parameters for bound exciton and free exciton emissions on temperature were analyzed. The present results provide a correlation between the structural and optical properties of ZnO on vicinal surfaces and can be utilized for controllable ZnO heteroepitaxy on SiC toward device-quality ZnO epitaxial layers with potential applications in nano-optoelectronics.

Influence of hydrogen on the step flow growth of GaAs on vicinal surfaces by gas‐source migration enhanced epitaxy

1992 ◽  
Vol 61 (9) ◽  
pp. 1054-1056 ◽  
Author(s):  
H. Asahi ◽  
T. Hisaka ◽  
S. G. Kim ◽  
T. Kaneko ◽  
S. J. Yu ◽  
...  
Keyword(s):  
Vicinal Surfaces ◽  
Step Flow ◽  
Gas Source ◽  
Migration Enhanced Epitaxy ◽  
Step Flow Growth

Dynamics of Periodic Step-Bunching During Growth on Vicinal GaAs(110) Surfaces: Computer Simulations and Experiments

1993 ◽  
Vol 312 ◽  
Author(s):  
Mohan Krishnamurthy ◽  
D. R. M. Williams ◽  
P. M. Petroff
Keyword(s):  
Computer Simulations ◽  
Molecular Beam ◽  
Vicinal Surfaces ◽  
One Dimensional ◽  
Step Flow ◽  
Molecular Beam Epitaxial ◽  
Diffusion Parameters ◽  
Molecular Beam Epitaxial Growth ◽  
Step Flow Growth ◽  
And Diffusion

AbstractMolecular beam epitaxial growth on GaAs(110) vicinal surfaces results in the formation of periodic micro-facets. We compare experimental results with computer simulations of a simple one dimensional step-flow growth model. The simulations show that preferential adatom attachment to the down step in a step array results in the destruction of step uniformity. A kinetic limitation due to adatom diffusion length along the terraces leads to stabilization of a periodic array of step-bunches. We extend our simulations to show the effects of the attachment and diffusion parameters on the dynamics of facet evolution.

Morphological instability of a terrace edge during step-flow growth

1990 ◽  
Vol 41 (9) ◽  
pp. 5500-5508 ◽  
Author(s):  
G. S. Bales ◽  
A. Zangwill
Keyword(s):  
Morphological Instability ◽  
Step Flow ◽  
Step Flow Growth

scholarly journals Breakdown of metastable step-flow growth on vicinal surfaces induced by nucleation

2005 ◽  
Vol 72 (24) ◽  
Author(s):  
Daniele Vilone ◽  
Claudio Castellano ◽  
Paolo Politi
Keyword(s):  
Vicinal Surfaces ◽  
Step Flow ◽  
Step Flow Growth

Growth of (Zn)CdSe quantum structures on vicinal GaAs(001) substrates: step flow growth versus strain effects

2000 ◽  
Vol 214-215 ◽  
pp. 606-609 ◽  
Author(s):  
T Passow ◽  
H Heinke ◽  
D Kayser ◽  
K Leonardi ◽  
D Hommel
Keyword(s):  
Quantum Structures ◽  
Strain Effects ◽  
Step Flow ◽  
Step Flow Growth ◽  
Versus Strain
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