Characterization of Strain-Engineered Si:C Epitaxial Layers on Si Substrates

2012 ◽  
Vol 45 (6) ◽  
pp. 23-29 ◽  
Author(s):  
W. S. Yoo ◽  
T. Ishigaki ◽  
T. Ueda ◽  
J. Kajiwara ◽  
K. Kang ◽  
...  
Keyword(s):  
Epitaxial Layers ◽  
Si Substrates

Characterization of Single-Crystal 3C-SIC Epitaxial Layers on SI Substrates

1998 ◽  
Vol 535 ◽  
Author(s):  
S. E. Saddow ◽  
M. E. Okhusyen ◽  
M. S. Mazzola ◽  
M. Dudley ◽  
X. R. Huang ◽  
...  
Keyword(s):  
Crystal Structure ◽  
Cross Section ◽  
Epitaxial Layers ◽  
Si Substrate ◽  
Strain Fields ◽  
X Ray ◽  
Si Substrates ◽  
Sic Film

AbstractIn this paper we discuss the growth and characterization of 3C-SiC epitaxial layers grown on both a Si substrate as well as on a novel substrate. The growth uses a typical three step process. First an etch of the Si surface is performed, second the surface of the Si is carbonized and third 3C-SiC is grown on the carbonized surface. Several characterization techniques were used to verify the quality of the 3C-SiC film. Microscopy was used to investigate the surface morphology, X-ray and electron diffraction were used to determine crystal structure, cross section TEM was used to verify crystal structure and highlight twinning, and x-ray topography was used to measure the strain fields induced in Si substrate at the 3C-SiC/Si interface.

scholarly journals Growth And Characterization Of Epitaxial Layers Of Ge On Si Substrates

1987 ◽  
Author(s):  
D. Fathy ◽  
C. W. White ◽  
O. W. Holland
Keyword(s):  
Epitaxial Layers ◽  
Si Substrates

Electron microscope characterization of MOCVD-grown gap layers on Si

1986 ◽  
Vol 44 ◽  
pp. 724-725
Author(s):  
K.M. Jones ◽  
M.M. Al-Jassim ◽  
J.M. Olson
Keyword(s):  
Atmospheric Pressure ◽  
Vapour Deposition ◽  
Chemical Vapour ◽  
Organic Chemical ◽  
Lattice Match ◽  
Si Substrates ◽  
Metal Organic ◽  
Good Lattice ◽  
Antiphase Domains

The epitaxial growth of III-V semiconductors on Si for integrated optoelectronic applications is currently of great interest. GaP, with a lattice constant close to that of Si, is an attractive buffer between Si and, for example, GaAsP. In spite of the good lattice match, the growth of device quality GaP on Si is not without difficulty. The formation of antiphase domains, the difficulty in cleaning the Si substrates prior to growth, and the poor layer morphology are some of the problems encountered. In this work, the structural perfection of GaP layers was investigated as a function of several process variables including growth rate and temperature, and Si substrate orientation. The GaP layers were grown in an atmospheric pressure metal organic chemical vapour deposition (MOCVD) system using trimethylgallium and phosphine in H2. The Si substrates orientations used were (100), 2° off (100) towards (110), (111) and (211).

Characterization of GaAs[sub 1−x]N[sub x] epitaxial layers by ion beam analysis

2004 ◽  
Vol 22 (3) ◽  
pp. 908 ◽  
Author(s):  
P. Wei ◽  
M. Chicoine ◽  
S. Gujrathi ◽  
F. Schiettekatte ◽  
J.-N. Beaudry ◽  
...  
Keyword(s):  
Ion Beam ◽  
Epitaxial Layers ◽  
Ion Beam Analysis ◽  
Beam Analysis

Raman scattering characterization of group III-nitride epitaxial layers including cubic phase

1998 ◽  
Vol 189-190 ◽  
pp. 435-438 ◽  
Author(s):  
Hiroshi Harima ◽  
Toshiaki Inoue ◽  
Shin-ichi Nakashima ◽  
Hajime Okumura ◽  
Yuuki Ishida ◽  
...  
Keyword(s):  
Raman Scattering ◽  
Cubic Phase ◽  
Epitaxial Layers ◽  
Group Iii ◽  
Group Iii Nitride

Process and Simulation of TiSi2/n+/p Silicon Shallow Junctions

1991 ◽  
Vol 235 ◽  
Author(s):  
Ying Wu ◽  
W. Savin ◽  
T. Fink ◽  
N. M. Ravindra ◽  
R. T. Lareau ◽  
...  
Keyword(s):  
Electrical Characterization ◽  
Furnace Annealing ◽  
Si Substrates ◽  
Conventional Furnace ◽  
Mass Spec ◽  
Current Voltage ◽  
Shallow Junctions ◽  
Current Voltage Characteristics ◽  
Secondary Ion

ABSTRACTExperimental analysis and simulation of the formation and electrical characterization of TiSi2/+/p-Si shallow junctions are presented here. The formation of shallow n+-p junction, by ion implantation of As through Ti films evaporated on p-Si substrates followed by Rapid Thermal Annealing (RTA) and conventional furnace annealing has been performed in these experiments. Structural techniques such as Secondary Ion Mass Spec-troscopy (SIMS) and Rutherford Backscattering (RBS) experiments have been employed to characterize these devices. RUMP simulations were used to analyze and interpret the RBS data. Current-voltage characteristics have been simulated using PISCES simulator.

Infrared reflection in the Reststrahlen region of GaN MBE grown epitaxial layers on Si substrates

1999 ◽  
Vol 8 (1) ◽  
pp. 25-28 ◽  
Author(s):  
A. Iller ◽  
W. Jantsch ◽  
J. Marks ◽  
B. Pastuszka ◽  
R. Diduszko ◽  
...  
Keyword(s):  
Epitaxial Layers ◽  
Si Substrates ◽  
Infrared Reflection
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