Kinetic diffusion model of ion‐implanted boron during rapid thermal annealing

1992 ◽  
Vol 60 (10) ◽  
pp. 1202-1204 ◽  
Author(s):  
H. Kinoshita ◽  
D. L. Kwong
Keyword(s):  
Thermal Annealing ◽  
Diffusion Model ◽  
Rapid Thermal Annealing ◽  
Kinetic Diffusion ◽  
Ion Implanted

Effect of rapid thermal annealing on carrier lifetimes of arsenic‐ion‐implanted GaAs

1996 ◽  
Vol 69 (7) ◽  
pp. 996-998 ◽  
Author(s):  
Gong‐Ru Lin ◽  
Wen‐Chung Chen ◽  
Feruz Ganikhanov ◽  
C.‐S. Chang ◽  
Ci‐Ling Pan
Keyword(s):  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Carrier Lifetimes ◽  
Ion Implanted

Anomalous Transient Diffusion of Ion Implanted Boron during Rapid Thermal Annealing

1989 ◽  
Vol 146 ◽  
Author(s):  
Y. M. Kim ◽  
G. Q. Lo ◽  
D. L. Kwong ◽  
H. H. Tseng ◽  
R. Hance
Keyword(s):  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Anomalous Diffusion ◽  
Low Dose ◽  
Silicon Wafers ◽  
Silicon Ions ◽  
Defect Evolution ◽  
Boron Implantation ◽  
Silicon Implantation ◽  
Ion Implanted

ABSTRACTEffects of defect evolution during rapid thermal annealing (RTA) on the anomalous diffusion of ion implanted boron have been studied by implanting silicon ions prior to boron implantation with doses ranging from 1 × 1014cm−2 to 1 × 1016cm−2 at energies ranging from 20 to 150 KeV into silicon wafers. Diffusion of boron atoms implanted into a Si preamorphized layer during RTA is found to be anomalous in nature, and the magnitude of boron displacement depends on the RTA temperature. While RTA of preamorphized samples at 1150°C shows an enhanced boron displacement compared to that in crystalline samples, a reduced displacement is observed in preamorphized samples annealed by RTA at 1000°C. In addition, low dose pre-silicon implantation enhances the anomalous displacement significantly, especially at high RTA temperatures (1 150°C). Finally, the anomalous diffusion is found to depend strongly on the defect evolution during RTA.

Low Temperature Dopant Activation Using Variable Frequency Microwave Annealing

2010 ◽  
Vol 1245 ◽  
Author(s):  
Terry L. Alford ◽  
Karthik Sivaramakrishnan ◽  
Anil Indluru ◽  
Iftikhar Ahmad ◽  
Bob Hubbard ◽  
...  
Keyword(s):  
Low Temperature ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Effective Means ◽  
Variable Frequency ◽  
Dopant Activation ◽  
Ion Channeling ◽  
Transmission Electron ◽  
Limited Diffusion ◽  
Ion Implanted

AbstractVariable frequency microwaves (VFM) and rapid thermal annealing (RTA) were used to activate ion implanted dopants and re-grow implant-damaged silicon. Four-point-probe measurements were used to determine the extent of dopant activation and revealed comparable resistivities for 30 seconds of RTA annealing at 900 °C and 6-9 minutes of VFM annealing at 540 °C. Ion channeling analysis spectra revealed that microwave heating removes the Si damage that results from arsenic ion implantation to an extent comparable to RTA. Cross-section transmission electron microscopy demonstrates that the silicon lattice regains nearly all of its crystallinity after microwave processing of arsenic implanted silicon. Secondary ion mass spectroscopy reveals limited diffusion of dopants in VFM processed samples when compared to rapid thermal annealing. Our results establish that VFM is an effective means of low-temperature dopant activation in ion-implanted Si.

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