Influence of oxide charge on minority‐carrier lifetime in metal‐oxide‐semiconductor capacitors

1992 ◽  
Vol 60 (18) ◽  
pp. 2222-2224 ◽  
Author(s):  
A. Meinertzhagen ◽  
S. El Rharbi ◽  
M. Jourdain
Keyword(s):  
Metal Oxide ◽  
Carrier Lifetime ◽  
Minority Carrier ◽  
Minority Carrier Lifetime ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Oxide Charge

Minority Carrier Annihilation at Crystalline Silicon Interface in Metal Oxide Semiconductor Structure

2014 ◽  
Vol 1666 ◽  
Author(s):  
Jun Furukawa ◽  
Satoshi Shigeno ◽  
Shinya Yoshidomi ◽  
Tomohito Node ◽  
Masahiko Hasumi ◽  
...  
Keyword(s):  
Metal Oxide ◽  
Minority Carrier ◽  
Crystalline Silicon ◽  
Surface Recombination ◽  
Depletion Region ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Surface Recombination Velocity ◽  
Light Illumination ◽  
Recombination Velocity

ABSTRACTWe report photo induced minority carrier annihilation at the silicon surface in a metal–oxide–semiconductor (MOS) structure using 9.35 GHz microwave transmittance measurement. 7 Ωcm n-type 500-μm-thick crystalline silicon substrate coated with 100-nm-thick thermally grown SiO2 layers was used. 0.2-cm-long Al electrode bars were formed at the top and rear surfaces. 635 nm light illumination onto the top surface caused photo induced carriers to be in one side of the silicon region of the Al electrode. Microwave transmittance system detected photo induced carriers diffused from the light illuminated region via the MOS structured region. When the bias voltage was applied at +2.0 and -2.2 V to the electrode at the top surface, the surface recombination velocity increased from 44 (initial) to 83 and 86 cm/s, respectively because of depletion region formation at rear and top surface respectively. Those voltage applications caused change in the distribution of photo induced carriers in a 0.6-cm-wide region including light illuminated, MOS structured, microwave irradiated regions.

scholarly journals Origin of flatband voltage shift and unusual minority carrier generation in thermally grown GeO2/Ge metal-oxide-semiconductor devices

2009 ◽  
Vol 94 (20) ◽  
pp. 202112 ◽  
Author(s):  
Takuji Hosoi ◽  
Katsuhiro Kutsuki ◽  
Gaku Okamoto ◽  
Marina Saito ◽  
Takayoshi Shimura ◽  
...  
Keyword(s):  
Metal Oxide ◽  
Minority Carrier ◽  
Semiconductor Devices ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Carrier Generation ◽  
Voltage Shift ◽  
Flatband Voltage ◽  
Thermally Grown

Impact of metal–oxide gate dielectric on minority carrier lifetime in silicon

2002 ◽  
Vol 80 (20) ◽  
pp. 3850-3852 ◽  
Author(s):  
Rama I. Hegde ◽  
Christopher C. Hobbs ◽  
LuRae Dip ◽  
Jamie Schaeffer ◽  
Philip J. Tobin
Keyword(s):  
Metal Oxide ◽  
Carrier Lifetime ◽  
Gate Dielectric ◽  
Minority Carrier ◽  
Minority Carrier Lifetime
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